Analytical design of axial magnetic coils with systematically improved uniformity for miniature quantum devices

2019 ◽  
Vol 90 (11) ◽  
pp. 114706
Author(s):  
Yi Zhang ◽  
Yujiao Li ◽  
Qiyuan Jiang ◽  
Zhiguo Wang ◽  
Tao Xia ◽  
...  
Keyword(s):  
Quantum Devices ◽  
Analytical Design ◽  
Magnetic Coils

Metrological Estimates For Structural and Analytical Design of Complex Measurement Systems

2017 ◽  
Vol 11 (2) ◽  
pp. 62-70
Author(s):  
Y.P. Mucha ◽  
O.A. Avdeuk ◽  
I.Y. Koroleva ◽  
A.D. Korolev
Keyword(s):  
Analytical Design ◽  
Measurement Systems ◽  
Complex Measurement

Advanced Single Flux Quantum Devices

1999 ◽  
Author(s):  
Konstantin K. Likharev ◽  
P. Bunyk ◽  
W. Chao ◽  
T. Filippov ◽  
Y. Kameda
Keyword(s):  
Flux Quantum ◽  
Quantum Devices

scholarly journals A divide-and-conquer algorithm for quantum state preparation

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Israel F. Araujo ◽  
Daniel K. Park ◽  
Francesco Petruccione ◽  
Adenilton J. da Silva
Keyword(s):  
Computational Cost ◽  
Quantum Circuit ◽  
Divide And Conquer ◽  
Computational Time ◽  
Quantum Computers ◽  
Dimensional Vector ◽  
Quantum Devices ◽  
Divide And Conquer Algorithm ◽  
Quantum State Preparation ◽  
Quantum Device

AbstractAdvantages in several fields of research and industry are expected with the rise of quantum computers. However, the computational cost to load classical data in quantum computers can impose restrictions on possible quantum speedups. Known algorithms to create arbitrary quantum states require quantum circuits with depth O(N) to load an N-dimensional vector. Here, we show that it is possible to load an N-dimensional vector with exponential time advantage using a quantum circuit with polylogarithmic depth and entangled information in ancillary qubits. Results show that we can efficiently load data in quantum devices using a divide-and-conquer strategy to exchange computational time for space. We demonstrate a proof of concept on a real quantum device and present two applications for quantum machine learning. We expect that this new loading strategy allows the quantum speedup of tasks that require to load a significant volume of information to quantum devices.

Analytical Design of Additively Manufactured Focusing Metamaterial

2020 ◽  
Author(s):  
Emma Woods ◽  
Ricky Wildman ◽  
Mark Fromhold ◽  
Christopher Tuck
Keyword(s):  
Analytical Design

scholarly journals Strong and tunable spin–orbit interaction in a single crystalline InSb nanosheet

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  
Keyword(s):  
Layer Structure ◽  
Orbit Interaction ◽  
Spin Orbit ◽  
Device Layer ◽  
Physical Origin ◽  
Quantum Devices ◽  
Spin Orbit Interaction ◽  
Topological Quantum ◽  
Narrow Bandgap ◽  
Dual Gate

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.

scholarly journals Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 788
Author(s):  
Jian-Huan Wang ◽  
Ting Wang ◽  
Jian-Jun Zhang
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Core Shell ◽  
High Quality ◽  
Quantum Devices ◽  
Wafer Scale ◽  
Transmission Electron ◽  
Controllable Growth

Controllable growth of wafer-scale in-plane nanowires (NWs) is a prerequisite for achieving addressable and scalable NW-based quantum devices. Here, by introducing molecular beam epitaxy on patterned Si structures, we demonstrate the wafer-scale epitaxial growth of site-controlled in-plane Si, SiGe, and Ge/Si core/shell NW arrays on Si (001) substrate. The epitaxially grown Si, SiGe, and Ge/Si core/shell NW are highly homogeneous with well-defined facets. Suspended Si NWs with four {111} facets and a side width of about 25 nm are observed. Characterizations including high resolution transmission electron microscopy (HRTEM) confirm the high quality of these epitaxial NWs.

Geometric and analytical design of angulated scissor structures

2021 ◽  
Vol 164 ◽  
pp. 104402
Author(s):  
Najmeh Faghih Dinevari ◽  
Yaser Shahbazi ◽  
Feray Maden
Keyword(s):  
Analytical Design
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