Fluctuation electron microscopy on silicon amorphized at varying self ion-implantation conditions

2019 ◽  
Vol 126 (9) ◽  
pp. 095707
Author(s):  
Dražen Radić ◽  
Sven Hilke ◽  
Martin Peterlechner ◽  
Matthias Posselt ◽  
Hartmut Bracht
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Fluctuation Electron Microscopy

Analytical Electron Microscopy of Ion-Implanted Metals

1985 ◽  
Vol 43 ◽  
pp. 282-285
Author(s):  
D.I. Potter ◽  
M. Ahmed ◽  
K. Ruffing
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Friction And Wear ◽  
Analytical Electron Microscopy ◽  
Chemical Compositions ◽  
Surface Chemical ◽  
Near Surface ◽  
The Past ◽  
Analytical Electron ◽  
Property Changes

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.

scholarly journals Reducing Decoherence in Fluctuation Electron Microscopy

2021 ◽  
Vol 27 (S1) ◽  
pp. 1776-1777
Author(s):  
Armin Zjajo ◽  
Itai Matzkevich ◽  
Hongchu Du ◽  
Rafal Dunin-Borkowski ◽  
Aram Rezikyan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Fluctuation Electron Microscopy

Examination of a Polycrystalline Thin-Film Model to Explore the Relation between Probe Size and Structural Correlation Length in Fluctuation Electron Microscopy

2012 ◽  
Vol 18 (1) ◽  
pp. 241-253 ◽  
Author(s):  
M.M.J. Treacy ◽  
J.M. Gibson
Keyword(s):  
Electron Microscopy ◽  
Random Network ◽  
Voronoi Tessellation ◽  
Coherent Scattering ◽  
Specimen Thickness ◽  
Probe Size ◽  
Thin Film Model ◽  
Mean Grain Size ◽  
Fluctuation Electron Microscopy ◽  
Thin Polycrystalline

AbstractWe examine simulated electron microdiffraction patterns from models of thin polycrystalline silicon. The models are made by a Voronoi tessellation of random points in a box. The Voronoi domains are randomly selected to contain either a randomly-oriented cubic crystalline grain or a region of continuous random network material. The microdiffraction simulations from coherent probes of different widths are computed at the ideal kinematical limit, ignoring inelastic and multiple scattering. By examining the normalized intensity variance that is obtained in fluctuation electron microscopy experiments, we confirm that intensity fluctuations increase monotonically with the percentage of crystalline grains in the material. However, anomalously high variance is observed for models that have 100% crystalline grains with no imperfections. We confirm that the reduced normalized variance, V(k,R) − 1, that is associated with four-body correlations at scattering vector k, varies inversely with specimen thickness. Further, for probe sizes R larger than the mean grain size, we confirm that the reduced normalized variance obeys the predicted form given by Gibson et al. [Ultramicroscopy, 83, 169–178 (2000)] for the kinematical coherent scattering limit.

Hydrogen-Induced Reduction in Medium Range Order of a-Si Thin Films Observed using Fluctuation Electron Microscopy

2004 ◽  
Vol 10 (S02) ◽  
pp. 802-803
Author(s):  
Lakshmi Narayana Nittala ◽  
Sreenivas Jayaraman ◽  
Brent A Sperling ◽  
John R Abelson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Range Order ◽  
Medium Range Order ◽  
Medium Range ◽  
Fluctuation Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2004 in Savannah, Georgia, USA, August 1–5, 2004.

Wettability and Nanotribological Response of Silicon Surfaces Functionalized by Ion Implantation

2012 ◽  
Vol 730-732 ◽  
pp. 257-262
Author(s):  
Bruno Nunes ◽  
Sergio Magalhães ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
Ana Paula Serro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Silicon Surfaces ◽  
Iron Ions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Scanning Electron

Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.

scholarly journals Simulation of Decoherence in Fluctuation Electron Microscopy

2013 ◽  
Vol 19 (S2) ◽  
pp. 1592-1593
Author(s):  
A. Rezikyan ◽  
Z. Jibben ◽  
B. Rock ◽  
G. Zhao ◽  
M. Treacy
Keyword(s):  
Electron Microscopy ◽  
Fluctuation Electron Microscopy

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

scholarly journals Thermal Annealing of High Dose P Implantation in 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 399-402 ◽  
Author(s):  
Cristiano Calabretta ◽  
Massimo Zimbone ◽  
Eric G. Barbagiovanni ◽  
Simona Boninelli ◽  
Nicolò Piluso ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Epitaxial Layer ◽  
Point Defects ◽  
High Dose ◽  
Double Step ◽  
Post Annealing ◽  
Transmission Electron

In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

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