Heterogeneous nucleus-induced crystallization for high-speed phase change memory applications

2019 ◽  
Vol 115 (13) ◽  
pp. 133505
Author(s):  
Guangyu Liu ◽  
Liangcai Wu ◽  
Sifan Zhang ◽  
Wanliang Liu ◽  
Shilong Lv ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Heterogeneous Nucleus ◽  
Memory Applications ◽  
Induced Crystallization ◽  
Change Memory

High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications

2019 ◽  
Vol 12 (12) ◽  
pp. 125006
Author(s):  
Liangcai Wu ◽  
Tao Li ◽  
Wanliang Liu ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Large Window ◽  
Memory Applications ◽  
Change Memory

Ultra-high speed and low-power superlattice-like Sn 18 Sb 82 –SnSe 2 thin films for phase change memory applications

2016 ◽  
Vol 163 ◽  
pp. 20-23 ◽  
Author(s):  
Ruirui Liu ◽  
Zifang He ◽  
Jiwei Zhai ◽  
Sannian Song ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Power ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Ultra High Speed ◽  
Memory Applications ◽  
Change Memory

Superlattice-like SnSb4/Ge thin films for ultra-high speed phase change memory applications

CrystEngComm ◽  
2016 ◽  
Vol 18 (7) ◽  
pp. 1230-1234 ◽  
Author(s):  
Zifang He ◽  
Pengzhi Wu ◽  
Ruirui Liu ◽  
Jiwei Zhai ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Optical Methods ◽  
Ultra High Speed ◽  
Memory Applications ◽  
Change Memory

Superlattice-like (SLL) SnSb4/Ge thin films were studied by thermal, electrical and optical methods.

High speed and high reliability in Ge8Sb92/Ga30Sb70 stacked thin films for phase change memory applications

2015 ◽  
Vol 653 ◽  
pp. 334-337 ◽  
Author(s):  
Zifang He ◽  
Ruirui Liu ◽  
Pengzhi Wu ◽  
Jiwei Zhai ◽  
Tianshu Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
High Speed ◽  
High Reliability ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Carbon-Doped Sb-Rich Ge-Sb-Te Phase Change Material for High Speed and High Thermal Stability Phase Change Memory Applications

2017 ◽  
Vol 898 ◽  
pp. 1834-1838
Author(s):  
Tao Li ◽  
Liang Cai Wu ◽  
Zhi Tang Song ◽  
San Nian Song ◽  
Feng Rao ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Data Retention ◽  
Carbon Doped ◽  
Sputtering Power ◽  
Memory Applications ◽  
Change Material ◽  
High Crystallization Temperature ◽  
Change Memory

Carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) is proved to be a promising candidate for phase change memory because of it high crystallization temperature (higher than 200°C) and 10-year data retention temperature (higher than 120°C). The carbon-doped Sb-rich Ge-Sb-Te (Sb-CGST) films were deposited on SiO2/Si (100) substrate by RF magnetron co-sputtering using CGST alloy target (a GST target containing 16 at. % C) and Sb targets at room temperature. The content of Sb in the films was controlled by adjusting the sputtering power ratio of CGST and Sb. The results showed that both of these two properties increase firstly and then decreases with increasing the content of Sb, which are superior to that of Ge2Sb2Te5. Furthermore, Sb-CGST based PCM cells were fabricated to investigate the property of material. 6ns pulse could realize SET operation, and 3.2 x 10-11J energy can realize RESET operation.

Ni-doped GST materials for high speed phase change memory applications

2015 ◽  
Vol 64 ◽  
pp. 333-336 ◽  
Author(s):  
Yueqin Zhu ◽  
Zhonghua Zhang ◽  
Sannian Song ◽  
Huaqing Xie ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

Investigation of Cu–Sn–Se material for high-speed phase-change memory applications

2017 ◽  
Vol 28 (14) ◽  
pp. 10199-10204 ◽  
Author(s):  
Haipeng You ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Sannian Song ◽  
...  
Keyword(s):  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

MoSbTe for high-speed and high-thermal-stability phase-change memory applications

2018 ◽  
Vol 11 (4) ◽  
pp. 041401 ◽  
Author(s):  
Wanliang Liu ◽  
Liangcai Wu ◽  
Tao Li ◽  
Zhitang Song ◽  
Jianjun Shi ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
High Thermal Stability ◽  
Memory Applications ◽  
Change Memory
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