The change of fractional electron energy deposition by Xe gas contents in a discharge cells

2019 ◽  
Author(s):  
Don-Kyu Lee
2011 ◽  
Vol 497 ◽  
pp. 127-132 ◽  
Author(s):  
Hui Zhang ◽  
Takuro Tamura ◽  
You Yin ◽  
Sumio Hosaka

We have studied on theoretical electron energy deposition in thin resist layer on Si substrate for electron beam lithography. We made Monte Carlo simulation to calculate the energy distribution and to consider formation of nanometer sized pattern regarding electron energy, resist thickness and resist type. The energy distribution in 100 nm-thick resist on Si substrate were calculated for small pattern. The calculations show that 4 nm-wide pattern will be formed when resist thickness is less than 30 nm. Furthermore, a negative resist is more suitable than positive resist by the estimation of a shape of the energy distribution.


1973 ◽  
Vol 5 (4) ◽  
pp. 239-262 ◽  
Author(s):  
L.R. Peterson ◽  
T. Sawada ◽  
J.N. Bass ◽  
A.E.S. Green

1988 ◽  
Vol 36 (4) ◽  
pp. 329-352 ◽  
Author(s):  
J.L. Fox ◽  
G.A. Victor

1980 ◽  
Vol 51 (5) ◽  
pp. 2569
Author(s):  
E. J. T. Burns ◽  
J. Chang ◽  
A. V. Farnsworth ◽  
J. P. VanDevender ◽  
M. M. Widner ◽  
...  

2012 ◽  
Vol 18 (6) ◽  
pp. 1220-1228 ◽  
Author(s):  
Hendrix Demers ◽  
Nicolas Poirier-Demers ◽  
Matthew R. Phillips ◽  
Niels de Jonge ◽  
Dominique Drouin

AbstractThe Monte Carlo software CASINO has been expanded with new modules for the simulation of complex beam scanning patterns, for the simulation of cathodoluminescence (CL), and for the calculation of electron energy deposition in subregions of a three-dimensional (3D) volume. Two examples are presented of the application of these new capabilities of CASINO. First, the CL emission near threading dislocations in gallium nitride (GaN) was modeled. The CL emission simulation of threading dislocations in GaN demonstrated that a better signal-to-noise ratio was obtained with lower incident electron energy than with higher energy. Second, the capability to simulate the distribution of the deposited energy in 3D was used to determine exposure parameters for polymethylmethacrylate resist using electron-beam lithography (EBL). The energy deposition dose in the resist was compared for two different multibeam EBL schemes by changing the incident electron energy.


1985 ◽  
Vol 38 (3) ◽  
pp. 389-396 ◽  
Author(s):  
B.L. Lathrop ◽  
B.R. Wienke

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