scholarly journals Effects of microstructure and growth conditions on quantum emitters in gallium nitride

APL Materials ◽  
2019 ◽  
Vol 7 (8) ◽  
pp. 081106
Author(s):  
Minh Nguyen ◽  
Tongtong Zhu ◽  
Mehran Kianinia ◽  
Fabien Massabuau ◽  
Igor Aharonovich ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Growth Conditions ◽  
Quantum Emitters

scholarly journals Resonant excitation of quantum emitters in gallium nitride

Optica ◽  
2018 ◽  
Vol 5 (8) ◽  
pp. 932
Author(s):  
Mehran Kianinia ◽  
Carlo Bradac ◽  
Minh Nguyen ◽  
Tongtong Zhu ◽  
Milos Toth ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Resonant Excitation ◽  
Quantum Emitters

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Site control of quantum emitters in gallium nitride by polarity

2021 ◽  
Vol 118 (2) ◽  
pp. 021103
Author(s):  
Minh Anh Phan Nguyen ◽  
Jennifer Hite ◽  
Michael A. Mastro ◽  
Mehran Kianinia ◽  
Milos Toth ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Site Control ◽  
Quantum Emitters

Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition

2008 ◽  
Vol 1080 ◽  
Author(s):  
Christopher Y. Chow ◽  
Balaji Raghothamachar ◽  
Joan J. Carvajal ◽  
Hui Chen ◽  
Michael Dudley
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Synthesis Process ◽  
Metal Catalyst ◽  
Ni Catalyst ◽  
Tem Analysis ◽  
Gas Molecules

ABSTRACTIn this study, we report on the synthesis of gallium nitride (GaN) nanopowders on boron nitride (BN) substrates both with and without the use of metal catalyst by chemical vapor deposition (CVD). The synthesis process is based on the reaction between gallium (Ga) atoms from the decomposition of gallium acetylacetonate and ammonia (NH3) gas molecules. Using this process, gallium nitride (GaN) nanopowders have been synthesized at temperatures as low as 400°C, lower than previously reported. The grown nanopowders were characterized by SEM, EDX and TEM. Analysis reveals that higher yields were obtained by treating the BN substrates with Ni catalyst. Experiments to study the effect of growth conditions on the morphology of the nanopowders and analyze the growth mechanism are ongoing.

Effect of Aluminum Nitride Buffer Layer Temperature on Gallium Nitride Grown by OMVPE

1994 ◽  
Vol 339 ◽  
Author(s):  
L. B. Rowland ◽  
K. Doverspike ◽  
D. K. Gaskill ◽  
J. A. Freitas
Keyword(s):  
Gallium Nitride ◽  
Buffer Layer ◽  
Growth Temperature ◽  
Growth Conditions ◽  
Layer Growth ◽  
Buffer Layers ◽  
Double Crystal ◽  
Relative Crystallinity ◽  
Excitonic Emission ◽  
Aln Buffer

ABSTRACTGallium nitride layers were grown by organometallic vapor phase epitaxy on AlN buffer layers deposited in the range of 450–650°C. The GaN growth conditions were kept constant so that changes in film properties were due only to changes in the buffer layer growth temperature. A monotonie improvement in relative crystallinity as measured by double-crystal X-ray diffraction corresponded with a decrease in buffer layer growth temperature. Improvements in GaN electron transport at 300 and 77 K were also observed with decreasing AlN buffer layer temperature. Photoluminescence spectra for the lowest temperatures studied were dominated by sharp excitonic emission, with some broadening of the exciton linewidth observed as the buffer layer growth temperature was increased. The full width at half maximum of the excitonic emission was 2.7 meV for GaN grown on a 450°C buffer layer. These results indicate that minimizing AlN buffer layer temperature results in improvements in GaN film quality.

Effect of Gallium Nitride Film Growth Conditions on Surface Segregation

2018 ◽  
Vol 54 (1) ◽  
pp. 26-31
Author(s):  
Yu. Ya. Tomashpolsky ◽  
V. M. Matyuk ◽  
N. V. Sadovskaya
Keyword(s):  
Gallium Nitride ◽  
Surface Segregation ◽  
Film Growth ◽  
Growth Conditions ◽  
Nitride Film ◽  
Gallium Nitride Film

Growth of Bulk AlN and GaN Single Crystals by Sublimation

1996 ◽  
Vol 449 ◽  
Author(s):  
C. M. Balkas ◽  
Z. Sitar ◽  
T. Zheleva ◽  
L. Bergman ◽  
I. K. Shmagin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Gallium Nitride ◽  
Optical Microscopy ◽  
Single Crystals ◽  
Crystal Morphology ◽  
Growth Conditions ◽  
Source Material ◽  
Transmission Electron ◽  
Dark Green

ABSTRACTSingle crystals of A1N to 1 mm thickness were grown in the range 1950-2250°C on 10×10 mm2 α(6H)-SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AlN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH3) flow. Optical microscopy, Raman and photoluminescence results are shown.

A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AF05 ◽  
Author(s):  
Min Jeong Shin ◽  
Min Ji Kim ◽  
Hun Soo Jeon ◽  
Hyung Soo Ahn ◽  
Sam Nyung Yi ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Influence of MBE Growth Conditions on Dislocation Densities of GaAs/Ge Epilayers Grown on Silicon Substrates

1985 ◽  
Vol 43 ◽  
pp. 364-365
Author(s):  
K.M. Hones ◽  
P. Sheldon ◽  
B.G. Yacobi ◽  
A. Mason
Keyword(s):  
High Efficiency ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Growth Conditions ◽  
Nonradiative Recombination ◽  
Device Structure ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Dislocation Type

There is increasing interest in growing epitaxial GaAs on Si substrates. Such a device structure would allow low-cost substrates to be used for high-efficiency cascade- junction solar cells. However, high-defect densities may result from the large lattice mismatch (∼4%) between the GaAs epilayer and the silicon substrate. These defects can act as nonradiative recombination centers that can degrade the optical and electrical properties of the epitaxially grown GaAs. For this reason, it is important to optimize epilayer growth conditions in order to minimize resulting dislocation densities. The purpose of this paper is to provide an indication of the quality of the epitaxially grown GaAs layers by using transmission electron microscopy (TEM) to examine dislocation type and density as a function of various growth conditions. In this study an intermediate Ge layer was used to avoid nucleation difficulties observed for GaAs growth directly on Si substrates. GaAs/Ge epilayers were grown by molecular beam epitaxy (MBE) on Si substrates in a manner similar to that described previously.

Diffraction from arrays of antiphase boundaries in ordered III-V alloys

1987 ◽  
Vol 45 ◽  
pp. 312-313
Author(s):  
T. S. Kuan
Keyword(s):  
High Surface ◽  
Growth Conditions ◽  
Ternary Alloys ◽  
Local Growth ◽  
Antiphase Boundaries ◽  
Surface Mobility ◽  
Ordered Phases ◽  
Diffraction Patterns ◽  
Atomically Flat ◽  
Degree Of Order

Recent electron diffraction studies have found ordered phases in AlxGa1-xAs, GaAsxSb1-x, and InxGa1-xAs alloy systems, and these ordered phases are likely to be found in many other III-V ternary alloys as well. The presence of ordered phases in these alloys was detected in the diffraction patterns through the appearance of superstructure reflections between the Bragg peaks (Fig. 1). The ordered phase observed in the AlxGa1-xAs and InxGa1-xAs systems is of the CuAu-I type, whereas in GaAsxSb1-x this phase and a chalcopyrite type ordered phase can be present simultaneously. The degree of order in these alloys is strongly dependent on the growth conditions, and during the growth of these alloys, high surface mobility of the depositing species is essential for the onset of ordering. Thus, the growth on atomically flat (110) surfaces usually produces much stronger ordering than the growth on (100) surfaces. The degree of order is also affected by the presence of antiphase boundaries (APBs) in the ordered phase. As shown in Fig. 2(a), a perfectly ordered In0.5Ga0.5As structure grown along the <110> direction consists of alternating InAs and GaAs monolayers, but due to local growth fluctuations, two types of APBs can occur: one involves two consecutive InAs monolayers and the other involves two consecutive GaAs monolayers.

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