scholarly journals Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer

2019 ◽  
Vol 114 (21) ◽  
pp. 212402 ◽  
Author(s):  
L. Rehm ◽  
V. Sluka ◽  
G. E. Rowlands ◽  
M.-H. Nguyen ◽  
T. A. Ohki ◽  
...  
Keyword(s):  
Spin Valve ◽  
Spin Torque ◽  
Free Layer ◽  
Memory Element

High frequency spin torque oscillators with composite free layer spin valve

2016 ◽  
Vol 410 ◽  
pp. 210-217 ◽  
Author(s):  
Kanimozhi Natarajan ◽  
Brinda Arumugam ◽  
Amuda Rajamani
Keyword(s):  
High Frequency ◽  
Spin Valve ◽  
Spin Torque ◽  
Free Layer ◽  
Spin Torque Oscillators

High-sensitive hysteresisless spin valve with a composite free layer

2012 ◽  
Vol 113 (4) ◽  
pp. 341-348 ◽  
Author(s):  
V. V. Ustinov ◽  
M. A. Milyaev ◽  
L. I. Naumova ◽  
V. V. Proglyado ◽  
N. S. Bannikova ◽  
...  
Keyword(s):  
Spin Valve ◽  
Free Layer

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals A cryogenic spin-torque memory element with precessional magnetization dynamics

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
G. E. Rowlands ◽  
C. A. Ryan ◽  
L. Ye ◽  
L. Rehm ◽  
D. Pinna ◽  
...  
Keyword(s):  
Spin Torque ◽  
Magnetization Dynamics ◽  
Memory Element

Enhancing Frequency and Reducing the Power of Spin-Torque Nanooscillator By The Generated Oersted Field

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050012
Author(s):  
H. Bhoomeeswaran ◽  
P. Sabareesan
Keyword(s):  
Spin Valve ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Spintronic Devices ◽  
Frequency Tunability ◽  
Spin Polarized ◽  
The Individual ◽  
Promising Source ◽  
Nonmagnetic Spacer

The current-driven magnetization precession dynamics stimulated by Spin-Transfer Torque (STT) in a trilayer spin-valve device (typically Spin-Torque Nanooscillator (STNO)) is numerically investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. We have devised four STNO devices made of ferromagnetic alloys such as CoPt, CoFeB, Fe[Formula: see text]B[Formula: see text]Ni2 and EuO, which act as free and fixed layers. Here, copper acts as a nonmagnetic spacer for all the devices. In this work, we have introduced the current-induced Oersted field, which is generated when a spin-polarized current passes through the device. The generated Oersted field strength is varied by increasing the diameter of the STNO device. Frequency tunability is achieved in all the four devices, whereas the power of the individual device reduces. The frequency and power of the devices depend entirely on the saturation magnetization of the material, which inherently reflects in the current density and the coherence of the spin-polarized DC. In all devices, the frequency increases, whereas the power decreases by increasing the strength of the Oersted field. Among the four devices, the maximum frequency can be tuned up to 104[Formula: see text]GHz with 40[Formula: see text]nm device diameter, which is obtained for EuO material. This opens a promising source and paves a glittering future for the nanoscale spintronic devices.

scholarly journals Noise Characterization of Vortex-State GMR Sensors with Different Free Layer Thicknesses

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 1013
Author(s):  
Herbert Weitensfelder ◽  
Hubert Brueckl ◽  
Armin Satz ◽  
Dieter Suess
Keyword(s):  
Spin Valve ◽  
Low Frequency ◽  
Vortex State ◽  
Frequency Noise ◽  
Free Layer ◽  
Low Frequencies ◽  
Gmr Sensors ◽  
Noise Characterization ◽  
Higher Sensitivity

The spin valve principle is the most prominent sensor design among giant- (GMR) and tunneling (TMR) magnetoresistive sensors. A new sensor concept with a disk shaped free layer enables the formation of a flux-closed vortex magnetization state if a certain relation of thickness to diameter is given. The low frequency noise of current-in-plane GMR sensing elements with different free layer thicknesses at different external field strengths has been measured. The measurements of the 1/f noise in external fields enabled a separation of magnetic and electric noise contributions. It has been shown that while the sensitivity is increasing with a decreasing element thickness, the pink noise contribution is increasing too. Still the detection limit at low frequencies is better in thinner free layer elements due to the higher sensitivity.

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