A comparative study of defect density of states for single, mixed and bulk heterojunction perovskite solar cells

2019 ◽  
Author(s):  
Varun Srivastava ◽  
Sathy Harshavardhan Reddy ◽  
B. Anitha ◽  
A. G. Manoj Namboothiry
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Density Of States ◽  
Defect Density ◽  
Bulk Heterojunction ◽  
Perovskite Solar Cells

Study on the defect density of states in light soaking effect enhanced performance of perovskite solar cells

2019 ◽  
Vol 52 (26) ◽  
pp. 265302 ◽  
Author(s):  
Varun Srivastava ◽  
Sathy Harshavardhan Reddy ◽  
Minu Mohan ◽  
B Anitha ◽  
B Adara ◽  
...  
Keyword(s):  
Solar Cells ◽  
Density Of States ◽  
Defect Density ◽  
Perovskite Solar Cells

scholarly journals Ambient Air Temperature Assisted Crystallization for Inorganic CsPbI2Br Perovskite Solar Cells

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3398
Author(s):  
Yi Long ◽  
Kun Liu ◽  
Yongli Zhang ◽  
Wenzhe Li
Keyword(s):  
Solar Cells ◽  
Air Temperature ◽  
High Performance ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Ambient Air ◽  
Dark Phase ◽  
High Quality ◽  
Ambient Air Temperature ◽  
Air Atmosphere

Inorganic cesium lead halide perovskites, as alternative light absorbers for organic–inorganic hybrid perovskite solar cells, have attracted more and more attention due to their superb thermal stability for photovoltaic applications. However, the humid air instability of CsPbI2Br perovskite solar cells (PSCs) hinders their further development. The optoelectronic properties of CsPbI2Br films are closely related to the quality of films, so preparing high-quality perovskite films is crucial for fabricating high-performance PSCs. For the first time, we demonstrate that the regulation of ambient temperature of the dry air in the glovebox is able to control the growth of CsPbI2Br crystals and further optimize the morphology of CsPbI2Br film. Through controlling the ambient air temperature assisted crystallization, high-quality CsPbI2Br films are obtained, with advantages such as larger crystalline grains, negligible crystal boundaries, absence of pinholes, lower defect density, and faster carrier mobility. Accordingly, the PSCs based on as-prepared CsPbI2Br film achieve a power conversion efficiency of 15.5% (the maximum stabilized power output of 15.02%). Moreover, the optimized CsPbI2Br films show excellent robustness against moisture and oxygen and maintain the photovoltaic dark phase after 3 h aging in an air atmosphere at room temperature and 35% relative humidity (R.H.). In comparison, the pristine films are completely converted to the yellow phase in 1.5 h.

A comparative study of o,p-dimethoxyphenyl-based hole transport materials by altering π-linker units for highly efficient and stable perovskite solar cells

2017 ◽  
Vol 5 (21) ◽  
pp. 10480-10485 ◽  
Author(s):  
Xing Li ◽  
Molang Cai ◽  
Zhongmin Zhou ◽  
Kang Yun ◽  
Fengxian Xie ◽  
...  
Keyword(s):  
Solar Cells ◽  
Comparative Study ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Highly Efficient

Two easily synthesized o,p-dimethoxyphenyl-based hole transport materials (HTMs) containing biphenyl (HL-1) and carbazole (HL-2) in the π-system, respectively, have been designed and studied for perovskite solar cells (PSCs).

scholarly journals An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Shun-Chang Liu ◽  
Chen-Min Dai ◽  
Yimeng Min ◽  
Yi Hou ◽  
Andrew H. Proppe ◽  
...  
Keyword(s):  
Solar Cells ◽  
Valence Band ◽  
Surface Passivation ◽  
Defect Density ◽  
Perovskite Solar Cells ◽  
Valence Band Maximum ◽  
Ambient Conditions ◽  
Band Maximum ◽  
Point Tracking ◽  
Power Point

AbstractIn lead–halide perovskites, antibonding states at the valence band maximum (VBM)—the result of Pb 6s-I 5p coupling—enable defect-tolerant properties; however, questions surrounding stability, and a reliance on lead, remain challenges for perovskite solar cells. Here, we report that binary GeSe has a perovskite-like antibonding VBM arising from Ge 4s-Se 4p coupling; and that it exhibits similarly shallow bulk defects combined with high stability. We find that the deep defect density in bulk GeSe is ~1012 cm−3. We devise therefore a surface passivation strategy, and find that the resulting GeSe solar cells achieve a certified power conversion efficiency of 5.2%, 3.7 times higher than the best previously-reported GeSe photovoltaics. Unencapsulated devices show no efficiency loss after 12 months of storage in ambient conditions; 1100 hours under maximum power point tracking; a total ultraviolet irradiation dosage of 15 kWh m−2; and 60 thermal cycles from −40 to 85 °C.

Phenoxazine-Based Small Molecule Material for Efficient Perovskite Solar Cells and Bulk Heterojunction Organic Solar Cells

2015 ◽  
Vol 5 (8) ◽  
pp. 1401720 ◽  
Author(s):  
Ming Cheng ◽  
Bo Xu ◽  
Cheng Chen ◽  
Xichuan Yang ◽  
Fuguo Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Small Molecule ◽  
Organic Solar Cells ◽  
Bulk Heterojunction ◽  
Perovskite Solar Cells

Bilateral Interface Engineering toward Efficient 2D–3D Bulk Heterojunction Tin Halide Lead-Free Perovskite Solar Cells

2018 ◽  
Vol 3 (3) ◽  
pp. 713-721 ◽  
Author(s):  
Chenxin Ran ◽  
Jun Xi ◽  
Weiyin Gao ◽  
Fang Yuan ◽  
Ting Lei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Bulk Heterojunction ◽  
Perovskite Solar Cells ◽  
Lead Free ◽  
Interface Engineering
Sign in / Sign up

Export Citation Format

Share Document