Cl-doping effect in ZnTe1-xOx highly mismatched alloys for intermediate band solar cells

2019 ◽  
Vol 125 (24) ◽  
pp. 243109 ◽  
Author(s):  
Tooru Tanaka ◽  
Kento Matsuo ◽  
Katsuhiko Saito ◽  
Qixin Guo ◽  
Takeshi Tayagaki ◽  
...  
Keyword(s):  
Solar Cells ◽  
Doping Effect ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Highly Mismatched Alloys

Growth and characterization of Zn1-Cd Te1-O highly mismatched alloys for intermediate band solar cells

2017 ◽  
Vol 169 ◽  
pp. 1-7 ◽  
Author(s):  
Tooru Tanaka ◽  
Toshiki Terasawa ◽  
Yuuki Okano ◽  
Shuji Tsutsumi ◽  
Katsuhiko Saito ◽  
...  
Keyword(s):  
Solar Cells ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
Highly Mismatched Alloys

scholarly journals Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Molecular Beam ◽  
Optical Excitation ◽  
Material System ◽  
Intermediate Band ◽  
Temperature Characteristics ◽  
Quantum Nanostructures ◽  
Band Engineering ◽  
Intermediate Band Solar Cells ◽  
Carrier Extraction

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

scholarly journals Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

2015 ◽  
Vol 141 ◽  
pp. 322-330 ◽  
Author(s):  
Mohammadreza Nematollahi ◽  
Xiaodong Yang ◽  
Lars Martin Sandvik Aas ◽  
Zahra Ghadyani ◽  
Morten Kildemo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

Investigation of the Sub-Bandgap Photoresponse in CuGaS2 : Fe for Intermediate Band Solar Cells

2011 ◽  
Vol 20 (6) ◽  
pp. 625-629 ◽  
Author(s):  
Björn Marsen ◽  
Sascha Klemz ◽  
Thomas Unold ◽  
Hans-Werner Schock
Keyword(s):  
Solar Cells ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells
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