Microscopic origin of the high piezoelectric response of Sm-doped BiFeO3 near the morphotropic phase boundary

2019 ◽  
Vol 125 (17) ◽  
pp. 175113
Author(s):  
Zhenyu Liao ◽  
Wei Sun ◽  
Qiqi Zhang ◽  
Jing-Feng Li ◽  
Jing Zhu
2006 ◽  
Vol 89 (19) ◽  
pp. 192903 ◽  
Author(s):  
Naohiko Yasuda ◽  
Md. M. Rahman ◽  
Hidehiro Ohwa ◽  
Mituyoshi Matsushita ◽  
Yohachi Yamashita ◽  
...  

2014 ◽  
Vol 467 (1) ◽  
pp. 173-180 ◽  
Author(s):  
Nur Hidayah ◽  
Naohiko Yasuda ◽  
Hidehiro Ohwa ◽  
Yoshihito Tachi ◽  
Yohachi Yamashita ◽  
...  

2005 ◽  
Vol 20 (4) ◽  
pp. 787-790 ◽  
Author(s):  
Yong Kwan Kim ◽  
Sang Sub Kim ◽  
Bongki Lee ◽  
Hyunjung Shin ◽  
Sunggi Baik

The relationship between crystal structure and piezo-response was investigated in epitaxially grown PbZr1−xTixO3 (PZT) thin films on Pt(001)/MgO(001) with a thin PbTiO3 interlayer. Insertion of the interlayer resulted in significant relaxation ofthe strain that could be developed in the course of deposition of the PZT films, consequently leading us to single out only the effect of composition. Composition of the morphotropic phase boundary (MPB), at which tetragonal and rhombohedral phases are mixed with the same volume fraction, was found to be ∼0.55 in Ti/(Zr + Ti) ratio in our films, which is close to the value for bulk polycrystalline PZT (∼0.50). The piezoelectric response peaks were two times higher in the MPB regime than in the single phase regime due to structural instability caused by the coexistence of two phases. The results indicate that epitaxial PZT films having the MPB composition are advantageous over those of other compositions for nano-storage devices based on scanning force microscopy.


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