Performance limitations of nanowire resonant-tunneling transistors with steep switching analyzed by Wigner transport simulation

2019 ◽  
Vol 125 (17) ◽  
pp. 174502 ◽  
Author(s):  
Joon-Ho Lee ◽  
Mincheol Shin ◽  
Jeong Hyeon Seo
Keyword(s):  
Resonant Tunneling ◽  
Transport Simulation ◽  
Performance Limitations ◽  
Wigner Transport

Electron transport simulation in resonant-tunneling GaN/AlGaN heterostructures

2011 ◽  
Vol 45 (13) ◽  
pp. 1638-1641 ◽  
Author(s):  
V. I. Egorkin ◽  
M. N. Zhuravlev ◽  
V. V. Kapaev
Keyword(s):  
Electron Transport ◽  
Resonant Tunneling ◽  
Transport Simulation

scholarly journals Formulation of a phase space exponential operator for the Wigner transport equation accounting for the spatial variation of the effective mass

2020 ◽  
Vol 19 (4) ◽  
pp. 1399-1415 ◽  
Author(s):  
Lukas Schulz ◽  
Dirk Schulz
Keyword(s):  
Phase Space ◽  
Spatial Variation ◽  
Transport Equation ◽  
Effective Mass ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Exponential Operator ◽  
Wigner Transport ◽  
Wigner Transport Equation

Abstract A novel numerical approximation technique for the Wigner transport equation including the spatial variation of the effective mass based on the formulation of an exponential operator within the phase space is derived. In addition, a different perspective for the discretization of the phase space is provided, which finally allows flexible discretization patterns. The formalism is presented by means of a simply structured resonant tunneling diode in the stationary and transient regime utilizing a conduction band Hamilton operator. In order to account for quantum effects within heterostructure devices adequately, the corresponding spatial variation of the effective mass is considered explicitly, which is mostly disregarded in conventional methods. The results are validated by a comparison with the results obtained from the nonequilibrium Green’s function approach within the stationary regime assuming the flatband case. Additionally, the proposed approach is utilized to perform a transient analysis of the resonant tunneling diode including the self-consistent Hartree–Fock potential.

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