Synergistic tuning of carrier mobility, effective mass, and point defects scattering triggered high thermoelectric performance in n-type Ge-doped PbTe

2019 ◽  
Vol 125 (5) ◽  
pp. 055104 ◽  
Author(s):  
Zhengshang Wang ◽  
Huan He ◽  
Xudong Cui ◽  
Hangtian Liu ◽  
Wenbin Qiu ◽  
...  
Keyword(s):  
Effective Mass ◽  
Point Defects ◽  
Carrier Mobility ◽  
Thermoelectric Performance

Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity

2018 ◽  
Vol 11 (9) ◽  
pp. 2486-2495 ◽  
Author(s):  
Yu Xiao ◽  
Haijun Wu ◽  
Juan Cui ◽  
Dongyang Wang ◽  
Liangwei Fu ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Band Structure ◽  
Effective Mass ◽  
Point Defects ◽  
High Performance ◽  
Carrier Mobility

Synergistically optimizing the band structure and introducing point defects lead to remarkably high ZT in n-type PbTe–MnTe.

scholarly journals Backbone Effects on the Thermoelectric Properties of Ultra-Small Bandgap Conjugated Polymers

Polymers ◽  
2021 ◽  
Vol 13 (15) ◽  
pp. 2486
Author(s):  
Dexun Xie ◽  
Jing Xiao ◽  
Quanwei Li ◽  
Tongchao Liu ◽  
Jinjia Xu ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Power Factor ◽  
Carrier Mobility ◽  
Polymeric Materials ◽  
Thermoelectric Performance ◽  
Organic Thermoelectric Materials ◽  
Higher Power ◽  
Donor Acceptor ◽  
Maximum Power Factor ◽  
Higher Carrier Mobility

Conjugated polymers with narrower bandgaps usually induce higher carrier mobility, which is vital for the improved thermoelectric performance of polymeric materials. Herein, two indacenodithiophene (IDT) based donor–acceptor (D-A) conjugated polymers (PIDT-BBT and PIDTT-BBT) were designed and synthesized, both of which exhibited low-bandgaps. PIDTT-BBT showed a more planar backbone and carrier mobility that was two orders of magnitude higher (2.74 × 10−2 cm2V−1s−1) than that of PIDT-BBT (4.52 × 10−4 cm2V−1s−1). Both exhibited excellent thermoelectric performance after doping with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane, where PIDTT-BBT exhibited a larger conductivity (0.181 S cm−1) and a higher power factor (1.861 μW m−1 K−2) due to its higher carrier mobility. The maximum power factor of PIDTT-BBT reached 4.04 μW m−1 K−2 at 382 K. It is believed that conjugated polymers with a low bandgap are promising in the field of organic thermoelectric materials.

Structural design principles for low hole effective mass s-orbital-based p-type oxides

2017 ◽  
Vol 5 (23) ◽  
pp. 5772-5779 ◽  
Author(s):  
Viet-Anh Ha ◽  
Francesco Ricci ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier
Keyword(s):  
Effective Mass ◽  
First Principles ◽  
Structural Design ◽  
Carrier Mobility ◽  
Design Principles ◽  
Hole Effective Mass ◽  
P Type

We demonstrate through first principles computations how the metal–oxygen–metal angle directly drives the hole effective mass (thus the carrier mobility) in p-type s-orbital-based oxides.

scholarly journals Silver vacancy concentration engineering leading to the ultralow lattice thermal conductivity and improved thermoelectric performance of Ag1-xInTe2

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Yaqiong Zhong ◽  
Yong Luo ◽  
Xie Li ◽  
Jiaolin Cui
Keyword(s):  
Crystal Structure ◽  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Point Defects ◽  
Lattice Thermal Conductivity ◽  
Vacancy Concentration ◽  
Antisite Defect ◽  
Thermoelectric Performance ◽  
Callaway Model

AbstractAgInTe2 compound has not received enough recognition in thermoelectrics, possibly due to the fact that the presence of Te vacancy (VTe) and antisite defect of In at Ag site (InAg) degrades its electrical conductivity. In this work, we prepared the Ag1-xInTe2 compounds with substoichiometric amounts of Ag and observed an ultralow lattice thermal conductivity (κL = 0.1 Wm−1K−1) for the sample at x = 0.15 and 814 K. This leads to more than 2-fold enhancement in the ZT value (ZT = 0.62) compared to the pristine AgInTe2. In addition, we have traced the origin of the untralow κL using the Callaway model. The results attained in this work suggest that the engineering of the silver vacancy (VAg) concentration is still an effective way to manipulate the thermoelectric performance of AgInTe2, realized by the increased point defects and modified crystal structure distortion as the VAg concentration increases.

Carbon nanotube fibers with enhanced longitudinal carrier mobility for high-performance all-carbon thermoelectric generators

Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 16919-16927 ◽  
Author(s):  
Taemin Lee ◽  
Kyung Tae Park ◽  
Bon-Cheol Ku ◽  
Heesuk Kim
Keyword(s):  
Carbon Nanotube ◽  
High Performance ◽  
Carrier Mobility ◽  
Thermoelectric Performance ◽  
Thermoelectric Generators ◽  
Carbon Nanotube Fibers

We have demonstrated wet-spun CNT fibers with high thermoelectric performance by optimizing the longitudinal carrier mobility.

High thermoelectric performance in low-cost SnS0.91Se0.09 crystals

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1418-1424 ◽  
Author(s):  
Wenke He ◽  
Dongyang Wang ◽  
Haijun Wu ◽  
Yu Xiao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Toxic Elements ◽  
Low Cost ◽  
Thermoelectric Performance ◽  
Tin Sulfide ◽  
Temperature Dependent ◽  
Earth Abundant

Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (μ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (μW cm−1 K−2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZTmax) of ~1.6 at 873 K and an average ZT (ZTave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.

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