Heteroepitaxy of MoSe2 on Si(111) substrates: Role of surface passivation

2019 ◽  
Vol 114 (5) ◽  
pp. 053106 ◽  
Author(s):  
Akihiro Ohtake ◽  
Yoshiki Sakuma
Keyword(s):  
Surface Passivation

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Role of surface passivation on the development of camphor based Graphene/SiNWAs schottky diode

2021 ◽  
Author(s):  
Harsh A. Chaliyawala ◽  
Suresh Vemuri ◽  
Kashinath Lellala ◽  
Indrajit Mukhopadhyay
Keyword(s):  
Schottky Diode ◽  
Surface Passivation

scholarly journals The Role of Silicon Heterojunction and TCO Barriers on the Operation of Silicon Heterojunction Solar Cells: Comparison between Theory and Experiment

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
Yaser Abdulraheem ◽  
Moustafa Ghannam ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Ivan Gordon
Keyword(s):  
Solar Cells ◽  
Large Scale ◽  
Surface Passivation ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Thermionic Emission ◽  
Analytical Description ◽  
Theoretical Explanation ◽  
The Impact

Photovoltaic devices based on amorphous silicon/crystalline silicon (a-Si:H/c-Si) heterojunction interfaces hold the highest efficiency as of date in the class of silicon-based devices with efficiencies exceeding 26% and are regarded as a promising technology for large-scale terrestrial PV applications. The detailed understanding behind the operation of this type of device is crucial to improving and optimizing its performance. SHJ solar cells have primarily two main interfaces that play a major role in their operation: the transparent conductive oxide (TCO)/a-Si:H interface and the a-Si:H/c-Si heterojunction interface. In the work presented here, a detailed analytical description is provided for the impact of both interfaces on the performance of such devices and especially on the device fill factor ( FF ). It has been found that the TCO work function can dramatically impact the FF by introducing a series resistance element in addition to limiting the forward biased current under illumination causing the well-known S-shape characteristic in the I-V curve of such devices. On the other hand, it is shown that the thermionic emission barrier at the heterojunction interface can play a major role in introducing an added series resistance factor due to the intrinsic a-Si:H buffer layer that is usually introduced to improve surface passivation. Theoretical explanation on the role of both interfaces on device operation based on 1D device simulation is experimentally verified. The I-V characteristics of fabricated devices were compared to the curves produced by simulation, and the observed degradation in the FF of fabricated devices was explained in light of analytical findings from simulation.

The Enabling Role of Surface Passivation in Visible Photoluminescence from Si Nanoparticles

1993 ◽  
Vol 318 ◽  
Author(s):  
A.A. Seraphin ◽  
E. Werwa ◽  
L.A. Chiu ◽  
K.D. Kolenbrander
Keyword(s):  
Room Temperature ◽  
Surface Passivation ◽  
Light Emission ◽  
Supersonic Expansion ◽  
Expansion Technique ◽  
Si Nanoparticles ◽  
Silicon Nanocrystallites ◽  
Pl Emission ◽  
Si Nanocrystallites

ABSTRACTSilicon nanocrystallites have been studied in a variety of passivating environments to study the role of surface passivation in visible light emission from the particles. Thin films of Si nanocrystallites have been deposited by a laser ablation supersonic expansion technique. The films show significant room temperature photoluminescence (PL) behavior only after processing to achieve surface passivation. Passivation effects on light emission are studied through PL emission spectroscopy on clusters in the gas phase, as well as films in a variety of passivating media. The intensity of PL emission seems to scale with the extent of surface passivation, but the specific nature of the passivating species is not critical in defining the wavelength of emitted light.

Controlling side reactions and self-discharge in high-voltage spinel cathodes: the critical role of surface crystallographic facets

2015 ◽  
Vol 17 (39) ◽  
pp. 26471-26481 ◽  
Author(s):  
Saravanan Kuppan ◽  
Hugues Duncan ◽  
Guoying Chen
Keyword(s):  
High Voltage ◽  
Surface Passivation ◽  
Critical Role ◽  
Side Reactions ◽  
Crystallographic Facets

Reduced side reactions and self-discharge were observed on LMNO with (111) facets that promote surface passivation following initial cathode/electrolyte interactions.

Role of Molecular Surface Passivation in Electrical Transport Properties of InAs Nanowires

Nano Letters ◽  
2008 ◽  
Vol 8 (1) ◽  
pp. 49-55 ◽  
Author(s):  
Qingling Hang ◽  
Fudong Wang ◽  
Patrick D. Carpenter ◽  
Dmitri Zemlyanov ◽  
Dmitri Zakharov ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Surface Passivation ◽  
Molecular Surface ◽  
Electrical Transport Properties ◽  
Inas Nanowires

scholarly journals Surface passivation of germanium by atomic layer deposited Al2O3 nanolayers

2021 ◽  
Author(s):  
Wilhelmus J. H. Berghuis ◽  
Jimmy Melskens ◽  
Bart Macco ◽  
Roel J. Theeuwes ◽  
Marcel A. Verheijen ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Extensive Study ◽  
Surface Recombination Velocity ◽  
Interface Charges ◽  
Layer Deposition ◽  
Recombination Velocity ◽  
Electronic Defects

AbstractSurfaces of semiconductors are notorious for the presence of electronic defects such that passivation approaches are required for optimal performance of (opto)electronic devices. For Ge, thin films of Al2O3 prepared by atomic layer deposition (ALD) can induce surface passivation; however, no extensive study on the effect of the Al2O3 process parameters has been reported. In this work we have investigated the influence of the Al2O3 thickness (1–44 nm), substrate temperature (50–350 °C), and post-deposition anneal (in N2, up to 600 °C). We demonstrated that an effective surface recombination velocity as low as 170 cm s−1 can be achieved. The role of the GeOx interlayer as well as the presence of interface charges was addressed and a fixed charge density $${Q}_{\mathrm{f}}=$$ Q f = −(1.8 ± 0.5) × 1012 cm−2 has been found. The similarities and differences between the passivation of Ge and Si surfaces by ALD Al2O3 prepared under the same conditions are discussed. Graphic Abstract

Nonlinear photocarrier dynamics and the role of shallow traps in mixed-halide mixed-cation hybrid perovskites

2021 ◽  
Author(s):  
David Alberto Valverde-Chávez ◽  
Esteban Rojas-Gatjens ◽  
Jacob Williamson ◽  
Sarthak Jariwala ◽  
Yangwei Shi ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Metal Halide ◽  
Carrier Trapping ◽  
Mixed Cation ◽  
Halide Perovskites ◽  
Shallow Traps ◽  
Recombination Dynamics

We examine the role of surface passivation on carrier trapping and nonlinear recombination dynamics in hybrid metal-halide perovskites by means of excitation correlation photoluminescence (ECPL) spectroscopy. We find that carrier...

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