scholarly journals High voltage negative ion beam injector for tandem accelerator

2018 ◽  
Author(s):  
A. Sanin ◽  
G. Abdrashitov ◽  
Yu. Belchenko ◽  
A. Ivanov ◽  
A. Gmyrya ◽  
...  
Keyword(s):  
High Voltage ◽  
Ion Beam ◽  
Negative Ion ◽  
Tandem Accelerator

Development of continuous wave high voltage negative ion beam injector for tandem accelerator

2019 ◽  
Vol 90 (12) ◽  
pp. 123314
Author(s):  
A. Sanin ◽  
Yu. Belchenko ◽  
A. Ivanov ◽  
A. Gmyrya
Keyword(s):  
High Voltage ◽  
Continuous Wave ◽  
Ion Beam ◽  
Negative Ion ◽  
Tandem Accelerator

scholarly journals Negative ion beam acceleration and transport in the high voltage injector prototype

2021 ◽  
Author(s):  
O. Sotnikov ◽  
A. Sanin ◽  
Yu. Belchenko ◽  
A. A. Ivanov ◽  
G. Abdrashitov ◽  
...  
Keyword(s):  
High Voltage ◽  
Ion Beam ◽  
Negative Ion

Characterization and light emission properties of osmium silicides synthesized by low energy ion implantation

2008 ◽  
Vol 1066 ◽  
Author(s):  
Prakash R. Poudel ◽  
K. Hossain ◽  
J. Li ◽  
B. Gorman ◽  
A. Neogi ◽  
...  
Keyword(s):  
Light Emission ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Ion Source ◽  
Alpha Particles ◽  
Low Energy ◽  
Negative Ion ◽  
Tandem Accelerator ◽  
Cross Sectional ◽  
Osmium Silicide

ABSTRACTLow energy (55 KeV) Osmium ( Os− ) negative ion beam was used to implant (5×1016 atoms/cm2 ) into p-type-Si (100). The implantation was performed with the ion source of a National Electrostatic Corp. 3 MV Tandem accelerator. The implanted sample was subsequently annealed at 650 °C in a gas mixture that was 4% H2 + 96% Ar. Rutherford Backscattering spectrometry (RBS) analysis with 1.5 MeV Alpha particles was used to monitor the precipitate formation. Photoluminescence (PL) measurements were also performed to study possible applications of silicides in light emission. Cross-sectional Scanning Electron Microscopy (X-SEM) was performed for topographic image of the implanted region. RBS along with PL measurements indicate that the presence of osmium silicide (Os2Si3) phase for light emission in the implanted region of the sample.

The ANL HVEM-tandem accelerator facilities

1978 ◽  
Vol 36 (1) ◽  
pp. 76-77
Author(s):  
R. Lyles ◽  
A. Taylor ◽  
K. Merkle ◽  
P. Okamoto ◽  
P. Pronko
Keyword(s):  
Materials Science ◽  
Ion Trap ◽  
Ion Beam ◽  
Dark Field ◽  
Negative Ion ◽  
Target Area ◽  
Tandem Accelerator ◽  
High Voltage Electron Microscopy ◽  
Voltage Electron ◽  
Ion Accelerator

The ANL HVEM-TANDEM accelerator facilities are being developed to provide a unique combination of techniques for basic studies in the field of materials science. In addition to the methods of high voltage electron microscopy, the ion accelerator system will provide ion beam analysis and ion bombardment - implantation capability either in the HVEM or in an adjacent target area. The installation of the HVEM is completed and constitutes the first step in the development of a materials research laboratory, which will include a HVEM/ion beam interface with a 300 kV ion accelerator and a 2-MV tandem accelerator. The plan layout of these facilities is shown schematically in Figure 1.ANL's 1.2 MeV HVEM is an improved version of the AEI EM-7 and has a guaranteed resolution of 5 Å point-to-point. The design of the microscope contains a number of unique features. These include a specially designed ion beam access flight tube, instrumentation for two independently adjustable dark field conditions, 100 - 1200 kV continuous-mode accelerating voltage selection, a negative ion trap, and an ion- pumped specimen chamber.

A Novel Dedicated HVE 14C AMS System

Radiocarbon ◽  
2019 ◽  
Vol 61 (5) ◽  
pp. 1441-1448
Author(s):  
M Klein ◽  
N C Podaru ◽  
D J W Mous
Keyword(s):  
High Voltage ◽  
Unique Feature ◽  
Magnetic Charge ◽  
Ion Beam ◽  
Primary Source ◽  
Feedback Loops ◽  
Tandem Accelerator ◽  
Term Operation ◽  
High Voltage Engineering

ABSTRACTHigh Voltage Engineering Europa (HVE) has designed a vacuum-insulated tandem accelerator dedicated to radiocarbon (14C) analysis. A unique feature of the design is a magnetic charge state selector that is incorporated in the high voltage terminal, which reduces the primary source of background that originates from the injection of 13CH− to negligible levels. As a result, background levels in the low 10−16 regimes are anticipated, thus supporting the most stringent 14C dating applications. Another feature of the system is the incorporation of several slit feedback loops for stabilization of the position of the ion beam throughout the system, which avoids drift and ensures stable, long-term operation. Finally, this article presents measurements and quantitative analysis of background contributions from 13CH−.

scholarly journals Survey of Simple Carbon Compounds for Use in a Negative Ion Sputter Source

Radiocarbon ◽  
1983 ◽  
Vol 25 (2) ◽  
pp. 775-784 ◽  
Author(s):  
J S Vogel ◽  
I G Nowikow ◽  
J R Southon ◽  
D E Nelson
Keyword(s):  
Heat Conduction ◽  
Ion Beam ◽  
Aluminum Carbide ◽  
Negative Ion ◽  
Carbon Yield ◽  
Tandem Accelerator ◽  
Beam Production ◽  
Carbon Compounds ◽  
Carbon Ion Beam ◽  
Carbon Beam

We present a survey of carbon beam yields from 20 simple carbon compounds using a caesium sputter source and the McMaster University tandem accelerator. The carbon yield was measured as a 35MeV 12C4+ beam. We found that the beam intensities could be related to a grouping of the carbides according to the chemical bonding of the compounds. The usefulness of the compounds for accelerator 14C dating was further related to their preparation chemistries. Strontium carbide was the equal of graphite in negative carbon ion beam production and aluminum carbide was found to be a good candidate for further tests because of its good sputter yield and preparation chemistry. Charcoal was also tested with varying amounts of silver added as a heat conduction aid.

The New ANL Materials Science HVEM Facility

1977 ◽  
Vol 35 ◽  
pp. 98-99
Author(s):  
R. L. Lyles ◽  
K. L. Merkle ◽  
P. Okamoto
Keyword(s):  
Materials Science ◽  
Ion Trap ◽  
Ion Beam ◽  
National Laboratory ◽  
High Vacuum ◽  
Argonne National Laboratory ◽  
Dark Field ◽  
Negative Ion ◽  
Tandem Accelerator ◽  
Materials Research

A new transmission HVEM facility has been completed at Argonne National Laboratory. The ANL HVEM provides the beginning of a dedicated materials research laboratory which will subsequently include an interface with a 2 MV tandem accelerator and a low energy ion injector for iri situ ion irradiation and ion beam analysis experiments (Figure 1).The microscope, an improved version of the AEI EM-7, has an accelerating voltage of 1.2 MeV. Moreover, a number of exceptional features have been designed into the instrument which will significantly enhance its usefulness in materials research: 1. High vacuum specimen chamber with direct ion pumping. 2. Instrumentation for two independent and alternatively selectable dark field conditions. 3. Negative ion trap. 4. Ion beam interface. In addition, a helium temperature, side entry, cooling stage is being developed at ANL . The negative ion trap and the ion beam interface are features that have not been previously included in HVEM designs.

Characteristics of extracted ion beam from a cesium-free negative ion source using sheet plasma

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Sheet Plasma

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

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