Thermal induced broadband all-optical switching in InP quantum dots

2019 ◽  
Vol 114 (11) ◽  
pp. 112103 ◽  
Author(s):  
Mingshan Wang ◽  
Zhiqiang Zhong ◽  
Shaoliang Wang ◽  
Luman Zhang ◽  
Mengyu Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Switching ◽  
All Optical ◽  
All Optical Switching ◽  
Inp Quantum Dots

scholarly journals Terahertz electro-absorption effect enabling femtosecond all-optical switching in semiconductor quantum dots

2010 ◽  
Vol 97 (23) ◽  
pp. 231108 ◽  
Author(s):  
M. C. Hoffmann ◽  
B. S. Monozon ◽  
D. Livshits ◽  
E. U. Rafailov ◽  
D. Turchinovich
Keyword(s):  
Quantum Dots ◽  
Optical Switching ◽  
Semiconductor Quantum Dots ◽  
Absorption Effect ◽  
All Optical ◽  
All Optical Switching

Quantum Dots in a Vertical Cavity for All-Optical Switching Devices

2009 ◽  
Author(s):  
C. Y. Jin ◽  
O. Kojima ◽  
T. Kita ◽  
O. Wada ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Switching ◽  
All Optical ◽  
Optical Switching Devices ◽  
Vertical Cavity ◽  
All Optical Switching ◽  
Switching Devices

ALL-OPTICAL SWITCHES BASED ON GaAs/AlGaAs QUANTUM DOTS VERTICAL CAVITY

2011 ◽  
Vol 20 (02) ◽  
pp. 205-215 ◽  
Author(s):  
F. D. ISMAIL ◽  
R. JOMTARAK ◽  
C. TEEKA ◽  
J. ALI ◽  
P. P. YUPAPIN
Keyword(s):  
Quantum Dots ◽  
Optical Switching ◽  
Optical Switch ◽  
Novel Device ◽  
All Optical ◽  
Polarization Insensitive ◽  
All Optical Switch ◽  
20 Nm ◽  
Vertical Cavity ◽  
All Optical Switching

In this paper, an all-optical switch based on self-assembled GaAs/AlAs quantum dots (QDs) within a vertical cavity is designed and proposed. Two essential aspects of this novel device have been investigated, which include the QD/cavity nonlinearity with appropriately designed mirrors and the intersubband carrier dynamics inside QDs. The vertical-reflection-type switches have been investigated with an asymmetric cavity that consists of 12 periods of GaAs/Al0.8Ga0.2As and 25 periods for the front and back mirrors, respectively. The thicknesses of the GaAs and AlGaAs layers are chosen to be 89 and 102 nm, respectively. To give a dot-in-a-well (DWELL) structure, the 65 nm dimension of Si was recommended to deposit within a 20 nm AlAs QW. Results obtained have shown that all-optical switching via the QD excited states has been achieved with a time constant down to 275-fs and over 29.5 nm tunable wavelengths. These results demonstrated that QDs within a vertical cavity have great potential to realize low-power, consumption polarization-insensitive and micrometer-sized switching devices for future optical communication and signal processing systems.

MoTe2 quantum dots-based all-optical switching

2021 ◽  
pp. 127573
Author(s):  
Hailin Xu ◽  
Zhitao Lin ◽  
Xiaoyu Dai
Keyword(s):  
Quantum Dots ◽  
Optical Switching ◽  
All Optical ◽  
All Optical Switching
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