scholarly journals Quantification of hole-trap concentration in degraded polymer light-emitting diodes using impedance spectroscopy

2019 ◽  
Vol 114 (16) ◽  
pp. 163301 ◽  
Author(s):  
Quan Niu ◽  
Gert-Jan A. H. Wetzelaer ◽  
Paul W. M. Blom ◽  
N. Irina Crăciun
2012 ◽  
Author(s):  
Manisha Bajpai ◽  
Ritu Srivastava ◽  
M. N. Kamalasanan ◽  
R. S. Tiwari ◽  
Suresh Chand

2016 ◽  
Vol 2 (8) ◽  
pp. 1600103 ◽  
Author(s):  
Quan Niu ◽  
Gert-Jan A. H. Wetzelaer ◽  
Paul W. M. Blom ◽  
Nicoleta I. Crăciun

2014 ◽  
Vol 2 (41) ◽  
pp. 8673-8677 ◽  
Author(s):  
Seungjin Lee ◽  
Bo Ram Lee ◽  
Ji-Seon Kim ◽  
Myoung Hoon Song

Device efficiency is enhanced by the combination effect of polar solvent treatment on ZnO and hole trap using F8:TFB blend.


2002 ◽  
Vol 734 ◽  
Author(s):  
A. van Dijken ◽  
I.N. Hulea ◽  
H.B. Brom ◽  
K. Brunner

ABSTRACTElectrical impedance spectroscopy is used to show that time-dependent charge trapping processes occur in double-layer polymer light-emitting diodes based on poly(ethylene-dioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS) and poly(p-phenylene vinylene) (PPV). No time-dependent charge trapping processes are observed in single-layer devices based on PPV only. Furthermore, in double-layer devices based on poly(2,7-spirofluorene) (PSF) instead of PPV, such processes are also absent. Traps are probably created in the PPV layer close to the PEDOT:PSS interface due to chemical reactions that occur specifically between PEDOT:PSS and PPV.


2018 ◽  
Vol 17 (6) ◽  
pp. 557-562 ◽  
Author(s):  
Quan Niu ◽  
Roland Rohloff ◽  
Gert-Jan A. H. Wetzelaer ◽  
Paul W. M. Blom ◽  
N. Irina Crăciun

2020 ◽  
Vol 6 (7) ◽  
pp. 1700643
Author(s):  
Irina Rörich ◽  
Quan Niu ◽  
Bas der Zee ◽  
Esther del Pino Rosendo ◽  
Nicoleta Irina Crăciun ◽  
...  

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.


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