scholarly journals High write endurance up to 1012 cycles in a spin current-type magnetic memory array

AIP Advances ◽  
2019 ◽  
Vol 9 (3) ◽  
pp. 035236 ◽  
Author(s):  
Yohei Shiokawa ◽  
Eiji Komura ◽  
Yugo Ishitani ◽  
Atsushi Tsumita ◽  
Keita Suda ◽  
...  
Keyword(s):  
Spin Current ◽  
Magnetic Memory ◽  
Memory Array ◽  
Write Endurance

Low‐Current, High‐Speed Magnetic Memory Array Utilizing Evaporated Matrix Wiring

1964 ◽  
Vol 35 (3) ◽  
pp. 760-761 ◽  
Author(s):  
T. J. Matcovich ◽  
W. Flannery ◽  
W. Luciw ◽  
A. A. Adomines
Keyword(s):  
High Speed ◽  
Magnetic Memory ◽  
Memory Array

Gauge concepts in theoretical applied physics

2016 ◽  
Vol 31 (03) ◽  
pp. 1630003 ◽  
Author(s):  
Seng Ghee Tan ◽  
Mansoor B. A. Jalil
Keyword(s):  
Gauge Theory ◽  
High Speed ◽  
Spin Current ◽  
Pure Spin ◽  
Magnetic Memory ◽  
Spin Orbit ◽  
Applied Physics ◽  
Detection Mechanism ◽  
Magnetic Field Sensors ◽  
Promising Source

Gauge concept evolves in the course of nearly one century from Faraday’s rather obscure electrotonic state of matter to the physically significant Yang–Mills that underpin today’s standard model. As gauge theories improve, links are established with modern observations, e.g. in the Aharonov–Bohm effect, the Pancharatnam–Berry’s phase, superconductivity, and quantum Hall effects. In this century, emergent gauge theory is formulated in numerous fields of applied physics like topological insulators, spintronics, and graphene. We will show in this paper the application of gauge theory in two particularly useful spin-based phenomena, namely the spin orbit spin torque and the spin Hall effect. These are important fields of study in the engineering community due to great commercial interest in the technology of magnetic memory (MRAM), and magnetic field sensors. Both spin orbit torque and spin Hall perform magnetic switching at low power and high speed. Furthermore, spin Hall is also a promising source of pure spin current, as well as a reliable form of detection mechanism for the magnetic state of a material.

Magnetic Memory

2009 ◽  
Author(s):  
Denny D. Tang ◽  
Yuan-Jen Lee
Keyword(s):  
Magnetic Memory

Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer)

2012 ◽  
Vol E95.C (5) ◽  
pp. 837-841 ◽  
Author(s):  
Se Hwan PARK ◽  
Yoon KIM ◽  
Wandong KIM ◽  
Joo Yun SEO ◽  
Hyungjin KIM ◽  
...  
Keyword(s):  
Flash Memory ◽  
Three Dimensional ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Memory Array

Manufacturing In-Line Whole Wafer Focused Ion Beam (FIB) Memory Address Descramble Verification

2008 ◽  
Author(s):  
Steven B. Herschbein ◽  
Hyoung H. Kang ◽  
Scott L. Jansen ◽  
Andrew S. Dalton
Keyword(s):  
Flip Chip ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Random Access ◽  
Cell Counting ◽  
Test Results ◽  
Laboratory Procedure ◽  
Memory Array ◽  
Dual Beam ◽  
Process Level

Abstract Test engineers and failure analyst familiar with random access memory arrays have probably encountered the frustration of dealing with address descrambling. The resulting nonsequential internal bit cell counting scheme often means that the location of the failing cell under investigation is nowhere near where it is expected to be. A logical to physical algorithm for decoding the standard library block might have been provided with the design, but is it still correct now that the array has been halved and inverted to fit the available space in a new processor chip? Off-line labs have traditionally been tasked with array layout verification. In the past, hard and soft failures could be induced on the frontside of finished product, then bitmapped to see if the sites were in agreement. As density tightened, flip-chip FIB techniques to induce a pattern of hard fails on packaged devices came into practice. While the backside FIB edit method is effective, it is complex and expensive. The installation of an in-line Dual Beam FIB created new opportunities to move FA tasks out of the lab and into the FAB. Using a new edit procedure, selected wafers have an extensive pattern of defects 'written' directly into the memory array at an early process level. Bitmapping of the RAM blocks upon wafer completion is then used to verify correlation between the physical damaged cells and the logical sites called out in the test results. This early feedback in-line methodology has worked so well that it has almost entirely displaced the complex laboratory procedure of backside FIB memory array descramble verification.

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