High quality 10.6 μm AlN grown on pyramidal patterned sapphire substrate by MOCVD

2019 ◽  
Vol 114 (4) ◽  
pp. 042101 ◽  
Author(s):  
Hanling Long ◽  
Jiangnan Dai ◽  
Yi Zhang ◽  
Shuai Wang ◽  
Bo Tan ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Quality ◽  
Patterned Sapphire Substrate

Improvement in the crystal quality of non-polar a-plane GaN directly grown on an SiO2 stripe-patterned r-plane sapphire substrate

CrystEngComm ◽  
2019 ◽  
Vol 21 (34) ◽  
pp. 5124-5128 ◽  
Author(s):  
Shen Yan ◽  
Junhui Die ◽  
Caiwei Wang ◽  
Xiaotao Hu ◽  
Ziguang Ma ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Crystal Quality ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Direct Growth

In this work, high-quality a-plane GaN was obtained by direct growth on a stripe-patterned sapphire substrate.

High quality GaN epilayers grown on carbon nanotube patterned sapphire substrate by metal–organic vapor phase epitaxy

CrystEngComm ◽  
2012 ◽  
Vol 14 (14) ◽  
pp. 4728 ◽  
Author(s):  
Hao Long ◽  
Yang Wei ◽  
Tongjun Yu ◽  
Zhe Wang ◽  
Chuanyu Jia ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Reduction of dislocations in α-Ga2O3 epilayers grown by halide vapor-phase epitaxy on a conical frustum-patterned sapphire substrate

IUCrJ ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 462-467
Author(s):  
Hoki Son ◽  
Ye-ji Choi ◽  
Soon-Ku Hong ◽  
Ji-Hyeon Park ◽  
Dae-Woo Jeon
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
High Performance ◽  
Lattice Mismatch ◽  
Vapor Phase Epitaxy ◽  
Stress Generation ◽  
Threading Dislocation ◽  
High Quality ◽  
Patterned Sapphire Substrate ◽  
Patterned Substrate

The compound α-Ga2O3 is an ultra-wide-bandgap semiconductor and possesses outstanding properties such as a high breakdown voltage and symmetry compared with other phases. It has been studied for applications in high-performance power devices. However, it is difficult to obtain a high-quality thin films because α-Ga2O3 can only grow heteroepitaxially, which results in residual stress generation owing to lattice mismatch and thermal expansion between the substrate and α-Ga2O3. To overcome this, α-Ga2O3 was grown on a conical frustum-patterned sapphire substrate by halide vapor-phase epitaxy. The surface morphology was crack-free and flat. The α-Ga2O3 grown on a frustum-patterned substrate and a conventional sapphire substrate at 500°C exhibited full-width at half-maxima of 961 and 1539 arcsec, respectively, for 10–12 diffraction. For the former substrate, lateral growth on the pattern and threading dislocation bending towards the pattern suppressed the propagation of threading dislocations generated at the interface, which reduced the threading dislocation propagation to the surface by half compared with that on the latter conventional substrate. The results suggest that conical frustum-patterned sapphire substrates have the potential to produce high-quality α-Ga2O3 epilayers.

High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

2011 ◽  
Vol 99 (24) ◽  
pp. 242103 ◽  
Author(s):  
Narihito Okada ◽  
Hiroyasu Oshita ◽  
Keisuke Yamane ◽  
Kazuyuki Tadatomo
Keyword(s):  
Sapphire Substrate ◽  
High Quality ◽  
Patterned Sapphire Substrate

scholarly journals Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 698
Author(s):  
Wenwang Wei ◽  
Yi Peng ◽  
Jiabin Wang ◽  
Muhammad Farooq Saleem ◽  
Wen Wang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Compressive Stress ◽  
Sapphire Substrate ◽  
Light Transmission ◽  
Chemical Vapor ◽  
Biaxial Stress ◽  
X Ray Diffraction ◽  
Patterned Sapphire Substrate ◽  
Transmission Electron ◽  
Nano Patterning

AlN epilayers were grown on a 2-inch [0001] conventional flat sapphire substrate (CSS) and a nano-patterned sapphire substrate (NPSS) by metalorganic chemical vapor deposition. In this work, the effect of the substrate template and temperature on stress and optical properties of AlN films has been studied by using Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-visible spectrophotometer and spectroscopic ellipsometry (SE). The AlN on NPSS exhibits lower compressive stress and strain values. The biaxial stress decreases from 1.59 to 0.60 GPa for AlN on CSS and from 0.90 to 0.38 GPa for AlN on NPSS sample in the temperature range 80–300 K, which shows compressive stress. According to the TEM data, the stress varies from tensile on the interface to compressive on the surface. It can be deduced that the nano-holes provide more channels for stress relaxation. Nano-patterning leads to a lower degree of disorder and stress/strain relaxes by the formation of the nano-hole structure between the interface of AlN epilayers and the substrate. The low crystal disorder and defects in the AlN on NPSS is confirmed by the small Urbach energy values. The variation in bandgap (Eg) and optical constants (n, k) with temperature are discussed in detail. Nano-patterning leads to poor light transmission due to light scattering, coupling, and trapping in nano-holes.

Demonstration of GaN-based white LED grown on 4-inch patterned sapphire substrate by MOCVD

2021 ◽  
Vol 112 ◽  
pp. 110811
Author(s):  
Youhua Zhu ◽  
Xuan Liu ◽  
Mei Ge ◽  
Yi Li ◽  
Meiyu Wang
Keyword(s):  
Sapphire Substrate ◽  
White Led ◽  
Patterned Sapphire Substrate

High quality non-polar a-plane AlN template grown on semi-polar r-plane sapphire substrate by three-step pulsed flow growth method

2021 ◽  
Vol 872 ◽  
pp. 159706
Author(s):  
Shuai Chen ◽  
Xiong Zhang ◽  
Shuchang Wang ◽  
Aijie Fan ◽  
Jiaqi He ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Quality ◽  
Pulsed Flow ◽  
Growth Method
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