scholarly journals Analysis of temperature dependent electrical performance of Al/CuO/ITO Schottky barrier diode and explanation of inhomogeneous barrier heights by double Gaussian distribution

AIP Advances ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 125104 ◽  
Author(s):  
Rajkumar Jana ◽  
Sayantan Sil ◽  
Arka Dey ◽  
Joydeep Datta ◽  
Partha Pratim Ray
Keyword(s):  
Schottky Barrier ◽  
Gaussian Distribution ◽  
Schottky Barrier Diode ◽  
Electrical Performance ◽  
Temperature Dependent ◽  
Barrier Heights ◽  
Double Gaussian Distribution

Analysis of temperature-dependent Schottky barrier parameters of Cu–Au Schottky contacts to n-InP

2012 ◽  
Vol 90 (1) ◽  
pp. 73-81 ◽  
Author(s):  
V. Lakshmi Devi ◽  
I. Jyothi ◽  
V. Rajagopal Reddy
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Gaussian Distribution ◽  
Ideality Factor ◽  
Thermionic Emission ◽  
Schottky Contacts ◽  
Temperature Dependent ◽  
Semiconductor Interface ◽  
Zero Bias ◽  
Barrier Heights

In this work, we have investigated the electrical characteristics of Au–Cu–n-InP Schottky contacts by current–voltage (I–V) and capacitance–voltage (C–V) measurements in the temperature range 260–420 K in steps of 20 K. The diode parameters, such as the ideality factor, n, and zero-bias barrier height, Φb0, have been found to be strongly temperature dependent. It has been found that the zero-bias barrier height, Φb0(I–V), increases and the ideality factor, n, decreases with an increase in temperature. The forward I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the assumption of gaussian distribution of barrier heights, due to barrier inhomogeneities that prevail at the metal–semiconductor interface. The zero-bias barrier height Φb0 versus 1/2kT plot has been drawn to obtain the evidence of a gaussian distribution of the barrier heights. The corresponding values are Φb0 = 1.16 eV and σ0 = 159 meV for the mean barrier height and standard deviation, respectively. The modified Richardson plot has given mean barrier height, Φb0, and Richardson constant, A**, as 1.15 eV and 7.34 Acm−2K−2, respectively, which is close to the theoretical value of 9.4 Acm−2K−2. Barrier heights obtained from C–V measurements are higher than those obtained from I–V measurements. This inconsistency between Schottky barrier heights (SBHs) obtained from I–V and C–V measurements was also interpreted. The temperature dependence of the I–V characteristics of the Au–Cu–n-InP Schottky diode has been explained on the basis of TE mechanism with gaussian distribution of the SBHs.

Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure

2019 ◽  
Vol 126 (2) ◽  
pp. 025301 ◽  
Author(s):  
Arun Malla Chowdhury ◽  
Rohit Pant ◽  
Basanta Roul ◽  
Deependra Kumar Singh ◽  
K. K. Nanda ◽  
...  
Keyword(s):  
Gaussian Distribution ◽  
Barrier Heights ◽  
Double Gaussian Distribution ◽  
Self Powered

Temperature-dependent characteristics of Schottky barrier diode on heterogeneous β-Ga2O3($\bar 201$)-Al2O3-Si Substrate

2020 ◽  
Vol 54 (3) ◽  
pp. 034004
Author(s):  
Yibo Wang ◽  
Wenhui Xu ◽  
Genquan Han ◽  
Tiangui You ◽  
Fengwen Mu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Si Substrate ◽  
Temperature Dependent

Temperature dependent 1/fnoise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode

2015 ◽  
Vol 30 (10) ◽  
pp. 105022 ◽  
Author(s):  
Ashutosh Kumar ◽  
S Nagarajan ◽  
M Sopanen ◽  
V Kumar ◽  
R Singh
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Temperature Dependent
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