High temperature impedance properties and conduction mechanism of W6+-doped CaBi4Ti4O15 Aurivillius piezoceramics

2018 ◽  
Vol 124 (20) ◽  
pp. 204101 ◽  
Author(s):  
Xinchun Xie ◽  
Zhiyong Zhou ◽  
Tianzi Wang ◽  
Ruihong Liang ◽  
Xianlin Dong
Keyword(s):  
High Temperature ◽  
Conduction Mechanism

High Temperature Proton Conductors Resarch and Application

2013 ◽  
Vol 750-752 ◽  
pp. 1219-1224
Author(s):  
Hai Yan Zhao ◽  
Yin Lin Wu ◽  
Ying Li ◽  
Chun Bo Bi
Keyword(s):  
Fuel Cells ◽  
High Temperature ◽  
Chemical Sensors ◽  
Conduction Mechanism ◽  
Proton Conductors ◽  
Hydrogen Fuel Cells ◽  
Hydrogen Fuel ◽  
Chemical Reactors ◽  
Homogeneous Catalysts

The definition and conduction mechanism of high temperature proton conductors is reviewed, its application in prepare hydrogen, fuel cells, chemical sensors, chemical reactors, the homogeneous catalysts are also discussed.

scholarly journals Dielectric Relaxor and Conductivity Mechanism in Fe-Substituted PMN-32PT Ferroelectric Crystal

Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 241 ◽  
Author(s):  
Xiaojuan Li ◽  
Xing Fan ◽  
Zengzhe Xi ◽  
Peng Liu ◽  
Wei Long ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Relaxation ◽  
Oxygen Vacancies ◽  
Conduction Mechanism ◽  
Ferroelectric Crystal ◽  
Conductivity Mechanism ◽  
Diffusion Phase ◽  
Charged Defects ◽  
The Relationship ◽  
Dielectric Relaxor

Fe-substituted PMN-32PT relaxor ferroelectric crystals were grown by a high-temperature flux method. The effects of charged defects on the dielectric relaxor and conductivity mechanism were discussed in detail. The Fe-substituted PMN-32PT crystal showed a high coercive field (Ec = 765 V/mm), due to domain wall-pinning, induced by charged defect dipoles. Three dielectric anomaly peaks were observed, and the two dielectric relaxation peaks at low temperature were associated with the diffusion phase transition, while the high temperature one resulted from the short-range hopping of oxygen vacancies. At temperature T ≤ 150 °C, the dominating conduction carriers were electrons coming from the first ionization of oxygen vacancies. For the temperature range from 200 to 500 °C, the conductivity was composed of the bulk and interface between sample and electrode, and the oxygen vacancies were suggested to be the conduction mechanism. Above 550 °C, the trapped electrons from the Ti3+ center were excited and played a major role in electrical conduction. Our results are helpful for better understanding the relationship between dielectric relaxation and the conduction mechanism.

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