scholarly journals Electron-selective atomic-layer-deposited TiOx layers: Impact of post-deposition annealing and implementation into n-type silicon solar cells

2018 ◽  
Author(s):  
Valeriya Titova ◽  
Dimitrij Startsev ◽  
Jan Schmidt
Keyword(s):  
Solar Cells ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Post Deposition Annealing ◽  
Type Silicon ◽  
Post Deposition

Excellent passivation and low reflectivity with atomic layer deposited bilayer coatings for n-type silicon solar cells

2014 ◽  
Vol 550 ◽  
pp. 541-544 ◽  
Author(s):  
Benjamin G. Lee ◽  
Shuo Li ◽  
Guillaume von Gastrow ◽  
Marko Yli-Koski ◽  
Hele Savin ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer ◽  
Silicon Solar Cells ◽  
Type Silicon ◽  
Bilayer Coatings

scholarly journals Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3328
Author(s):  
Atish Bhattacharjee ◽  
Tae-Woo Kim
Keyword(s):  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Superior Performance ◽  
Constant Voltage ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
Type Silicon ◽  
High Annealing ◽  
Post Deposition

In this study, an investigation was performed on the properties of atomic-layer-deposited aluminum oxide (Al2O3) on an n-type silicon (n-Si) substrate based on the effect of post-deposition heat treatment, which was speckled according to ambient temperature and treatment applied time. Based on these dealings, a series of distinctions for extracted capacitance and dielectric constant, hysteresis was performed on annealed and nonannealed samples. The interface and border trap responses, including stress behavior after an application of constant voltage for a specific time and surface morphology by X-ray diffraction (XRD) technique, were also analyzed between the two above-mentioned sample types. Based on observation, the annealed samples showed superior performance in every aspect compared with the nonannealed ones. Some unusual behaviors after high annealing temperature were found, and the explanation is the ion diffusion from oxide layer towards the semiconductor. Since a constant voltage stress was not widely used on the metal–oxide–semiconductor capacitor (MOSCAP), this analysis was determined to reveal a new dimension of post-deposition annealing condition for the Al/Al2O3/n-Si gate stack.

Hydrogen Passivation of Defects in Crystalline Silicon Solar Cells

2009 ◽  
Vol 1210 ◽  
Author(s):  
Michael Stavola ◽  
Fan Jiang ◽  
Suppawan Kleekajai ◽  
Lanlin Wen ◽  
Chao Peng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
High Sensitivity ◽  
Silicon Solar Cells ◽  
Hydrogen Passivation ◽  
Post Deposition Annealing ◽  
Crystalline Silicon Solar Cells ◽  
Cell Efficiency ◽  
Diffusion Depth ◽  
Post Deposition

AbstractHydrogen is commonly introduced into silicon solar cells to reduce the deleterious effects of defects and to increase cell efficiency. We have developed strategies by which hydrogen in silicon can be detected by IR spectroscopy with high sensitivity. The introduction of hydrogen into Si by the post-deposition annealing of a hydrogen-rich, SiNx coating has been investigated to determine hydrogen's concentration and penetration depth. Different hydrogenation processes were studied so that their effectiveness for the passivation of bulk defects could be compared. The best conditions investigated in our experiments yielded a hydrogen concentration near 1015 cm-3 and a diffusion depth consistent with the diffusivity of H found by Van Wieringen and Warmoltz.

scholarly journals Influence of the Front Surface Passivation Quality on Large Area n-Type Silicon Solar Cells with Al-Alloyed Rear Emitter

2011 ◽  
Vol 8 ◽  
pp. 487-492 ◽  
Author(s):  
F. Book ◽  
T. Wiedenmann ◽  
G. Schubert ◽  
H. Plagwitz ◽  
G. Hahn
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Front Surface ◽  
Silicon Solar Cells ◽  
Large Area ◽  
Type Silicon

scholarly journals METALLIZATION OF N-TYPE SILICON SOLAR CELLS USING FINE LINE PRINTING TECHNIQUES

2011 ◽  
Vol 8 ◽  
pp. 571-576 ◽  
Author(s):  
A. Kalio ◽  
A. Richter ◽  
M. Hörteis ◽  
S.W. Glunz
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Fine Line ◽  
Type Silicon ◽  
Printing Techniques

scholarly journals Microscopic origin of the aluminium assisted spiking effects in n-type silicon solar cells

2014 ◽  
Vol 131 ◽  
pp. 105-109 ◽  
Author(s):  
Friedemann D. Heinz ◽  
Matthias Breitwieser ◽  
Paul Gundel ◽  
Markus König ◽  
Matthias Hörteis ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Type Silicon ◽  
Microscopic Origin

High-Efficiency n-Type Silicon Solar Cells: Advances in PassDop Technology and NiCu Plating on Boron Emitter

2016 ◽  
Vol 6 (2) ◽  
pp. 419-425 ◽  
Author(s):  
Bernd Steinhauser ◽  
Mathias Kamp ◽  
Andreas A. Brand ◽  
Ulrich Jager ◽  
Jonas Bartsch ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Silicon Solar Cells ◽  
Type Silicon
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