Talbot interferometry for imaging two-dimensional electron density distribution over discharge plasma with higher sensitivity

2018 ◽  
Vol 89 (12) ◽  
pp. 123112 ◽  
Author(s):  
Y. Inada ◽  
T. Kamiya ◽  
H. Nagai ◽  
S. Matsuoka ◽  
A. Kumada ◽  
...  
Keyword(s):  
Density Distribution ◽  
Electron Density ◽  
Electron Density Distribution ◽  
Discharge Plasma ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Talbot Interferometry ◽  
Higher Sensitivity

scholarly journals FDTD Simulation Analysis for Improving Two-Dimensional Electron Density Distribution Measurement using Phase Imaging in GAMMA 10

2012 ◽  
Vol 7 (0) ◽  
pp. 2406122-2406122
Author(s):  
Tomohiro YAMADA ◽  
Masayuki YOSHIKAWA ◽  
Junko KOHAGURA ◽  
Yoriko SHIMA ◽  
Yusuke MORIKAWA ◽  
...  
Keyword(s):  
Density Distribution ◽  
Electron Density ◽  
Electron Density Distribution ◽  
Simulation Analysis ◽  
Fdtd Simulation ◽  
Phase Imaging ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Distribution Measurement

Temperature Stability of Heteropolytypic 6H/3C FETs

2007 ◽  
Vol 556-557 ◽  
pp. 843-846
Author(s):  
Chia Ching Chen ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
Konstantin Vassilevski
Keyword(s):  
Density Distribution ◽  
Computer Aided Design ◽  
Electron Density Distribution ◽  
Temperature Stability ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Electron Gases ◽  
Computer Aided ◽  
Band Profile ◽  
Aided Design

The formation of two-dimensional electron gases (2DEG) at the polytypic 6H/3C heterojunction is investigated. The main of study was to obtain the properties of the 3C/6H structure using Technology Computer Aided Design (TCAD) software. The electron-density distribution and conduction band profile in 6H/3C SiC heterojunction are calculated as a function of temperature. Simulation of these hetero-junctions has concentrated on the I-V behaviour over a range of temperatures between 350 and 650 K. We show that the device characteristics are substantially degraded at high temperatures and this will limit the use of these devices to moderate temperature applications.

A study on α-RuCl3 crystal structure by scanning tunneling microscopy

1989 ◽  
Vol 47 ◽  
pp. 30-31
Author(s):  
H.-J. Cantow ◽  
H. Hillebrecht ◽  
S. Magonov ◽  
H. W. Rotter ◽  
G. Thiele
Keyword(s):  
Crystal Structure ◽  
Density Distribution ◽  
Scanning Tunneling Microscopy ◽  
Electron Density ◽  
Structure Determination ◽  
Electron Density Distribution ◽  
Scanning Tunneling ◽  
Monoclinic Space Group ◽  
Tunneling Microscopy ◽  
X Ray

From X-ray analysis, the conclusions are drawn from averaged molecular informations. Thus, limitations are caused when analyzing systems whose symmetry is reduced due to interatomic interactions. In contrast, scanning tunneling microscopy (STM) directly images atomic scale surface electron density distribution, with a resolution up to fractions of Angstrom units. The crucial point is the correlation between the electron density distribution and the localization of individual atoms, which is reasonable in many cases. Thus, the use of STM images for crystal structure determination may be permitted. We tried to apply RuCl3 - a layered material with semiconductive properties - for such STM studies. From the X-ray analysis it has been assumed that α-form of this compound crystallizes in the monoclinic space group C2/m (AICI3 type). The chlorine atoms form an almost undistorted cubic closed package while Ru occupies 2/3 of the octahedral holes in every second layer building up a plane hexagon net (graphite net). Idealizing the arrangement of the chlorines a hexagonal symmetry would be expected. X-ray structure determination of isotypic compounds e.g. IrBr3 leads only to averaged positions of the metal atoms as there exist extended stacking faults of the metal layers.

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