Strain engineering of chevron graphene nanoribbons

2019 ◽  
Vol 125 (8) ◽  
pp. 082501 ◽  
Author(s):  
Yawei Lv ◽  
Shizhuo Ye ◽  
Hao Wang ◽  
Jin He ◽  
Qijun Huang ◽  
...  
Keyword(s):  
Graphene Nanoribbons ◽  
Strain Engineering

Size Dependent Mechanical Properties of Graphene Nanoribbons: Molecular Dynamics Simulation

2013 ◽  
Vol 749 ◽  
pp. 456-460 ◽  
Author(s):  
Yun Jin Sun ◽  
Fei Ma ◽  
K.W. Xu
Keyword(s):  
Mechanical Properties ◽  
Molecular Dynamics ◽  
Mechanical Stability ◽  
Graphene Nanoribbons ◽  
Md Simulations ◽  
Strain Engineering ◽  
Dynamics Simulation ◽  
Size Dependent ◽  
Key Issues ◽  
Strain Stress

Strain engineering is an effective method to tune the band gap and electronic transport properties of graphene nanoribbons (GNRs). However, strain/stress field may promote the system deviating from the equilibrium state, and the mechanical stability will become one of the key issues for reliable services of relevant devices. In this paper, the size-dependent mechanical properties of GNRs under tensile loading were studied by Molecular Dynamics (MD) simulations. The results indicate that the yield stress of both zigzag and armchair GNRs decreases with the ribbon length changing from 240 Å to 30 Å. However, the ductility of armchair GNRs was significantly improved. Radial Distribution Function (RDF) was employed to analyze the evolution of atomic configurations. It showed that lattice shearing is the main mechanism for the ductility of armchair GNRs.

Strain Engineering in 2D Materials: Towards Strain Tunable Optoelectronic Devices

2019 ◽  
Author(s):  
Andres Castellanos-Gomez ◽  
Patricia Gant ◽  
Riccardo Frisenda
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Strain Engineering

Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

2011 ◽  
Author(s):  
Jayhoon Chung ◽  
Guoda Lian ◽  
Lew Rabenberg
Keyword(s):  
Phase Analysis ◽  
Geometric Phase ◽  
Process Development ◽  
Local Strain ◽  
Strain Engineering ◽  
Dark Field ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Geometric Phase Analysis ◽  
Scanning Transmission

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

Graphene Nanoribbons: Towards Graphitic Materials with Predefined Dimensions and Electronic Properties

2015 ◽  
Vol 19 (18) ◽  
pp. 1850-1871 ◽  
Author(s):  
Eleftherios K. Pefkianakis ◽  
Georgios Sakellariou ◽  
Georgios C. Vougioukalakis
Keyword(s):  
Electronic Properties ◽  
Graphene Nanoribbons

Wrinkles and Wrinklons in Graphene and Graphene Nanoribbons Under Strain

2016 ◽  
Vol 12 (2) ◽  
pp. 184-191 ◽  
Author(s):  
Julia A. Baimova ◽  
Elena A. Korznikova ◽  
Sergey V. Dmitirev ◽  
Bo Liu ◽  
Kun Zhou
Keyword(s):  
Graphene Nanoribbons
Sign in / Sign up

Export Citation Format

Share Document