Room temperature luminescence of passivated InGaN quantum dots formed by quantum-sized-controlled photoelectrochemical etching

2018 ◽  
Vol 113 (12) ◽  
pp. 121106 ◽  
Author(s):  
Xiongliang Wei ◽  
Syed Ahmed Al Muyeed ◽  
Matthew R. Peart ◽  
Wei Sun ◽  
Nelson Tansu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Photoelectrochemical Etching ◽  
Room Temperature Luminescence

Low growth rate InAs/GaAs quantum dots for room-temperature luminescence over 1.3μm

2003 ◽  
Vol 34 (5-8) ◽  
pp. 631-633 ◽  
Author(s):  
M.J. da Silva ◽  
S. Martini ◽  
T.E. Lamas ◽  
A.A. Quivy ◽  
E.C.F. da Silva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Quantum Dots ◽  
Room Temperature ◽  
Room Temperature Luminescence

scholarly journals Enhancement of the room temperature luminescence of InAs quantum dots by GaSb capping

2007 ◽  
Vol 91 (1) ◽  
pp. 012111 ◽  
Author(s):  
J. M. Ripalda ◽  
D. Alonso-Álvarez ◽  
B. Alén ◽  
A. G. Taboada ◽  
J. M. García ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Inas Quantum Dots ◽  
Room Temperature Luminescence

Size-dependent room-temperature luminescence decay from PbS quantum dots

2012 ◽  
Author(s):  
Alexander P. Litvin ◽  
Peter S. Parfenov ◽  
Elena V. Ushakova ◽  
Anatoly V. Fedorov ◽  
Mikhail V. Artemyev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Luminescence Decay ◽  
Size Dependent ◽  
Pbs Quantum Dots ◽  
Room Temperature Luminescence

Room temperature luminescence in CuI/AgI quantum dots

2008 ◽  
Vol 128 (1) ◽  
pp. 161-165 ◽  
Author(s):  
T.H. Wei ◽  
C.W. Chen ◽  
L.C. Hwang ◽  
P.L. Tu ◽  
T.C. Wen
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Room Temperature Luminescence

Room-temperature luminescence of AgBr quantum dots

1999 ◽  
Vol 299 (2) ◽  
pp. 233-236 ◽  
Author(s):  
Mirjana I. Čomor ◽  
Jovan M. Nedeljković
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Room Temperature Luminescence

Room-temperature luminescence decay of colloidal semiconductor quantum dots: Nonexponentiality revisited

2016 ◽  
Vol 528 (3-4) ◽  
pp. 272-277 ◽  
Author(s):  
Evgeny N. Bodunov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Panfutova ◽  
A. L. Simões Gamboa
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Luminescence Decay ◽  
Semiconductor Quantum Dots ◽  
Colloidal Semiconductor ◽  
Room Temperature Luminescence

GaN quantum dot UV light emitting diode

2003 ◽  
Vol 798 ◽  
Author(s):  
Jeong-Sik Lee ◽  
Satoru Tanaka ◽  
Peter Ramvall ◽  
Hiroaki Okagawa
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Active Layer ◽  
Room Temperature ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Current Injection ◽  
High Density ◽  
Light Emitting ◽  
Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

Sign in / Sign up

Export Citation Format

Share Document