Radiation-induced changes of vacancy-type defects in ferroelectric capacitors as revealed by Doppler broadening positron annihilation spectroscopy

2018 ◽  
Vol 124 (24) ◽  
pp. 244105 ◽  
Author(s):  
Hanhan Zhou ◽  
Ming Liu ◽  
Samuel C. Williams ◽  
Lee A. Griffin ◽  
Cory D. Cress ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Radiation Induced ◽  
Induced Changes ◽  
Ferroelectric Capacitors

Annihilation Lifetime Spectroscopy Using Positrons from Bremsstrahlung Production

2012 ◽  
Vol 331 ◽  
pp. 41-52 ◽  
Author(s):  
Andreas Wagner ◽  
Wolfgang Anwand ◽  
Maik Butterling ◽  
Thomas E. Cowan ◽  
Fine Fiedler ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Linear Accelerator ◽  
Electron Accelerator ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Electron Linear Accelerator ◽  
Positron Annihilation Lifetime ◽  
Electron Bremsstrahlung ◽  
New Type ◽  
Set Up

A new type of a positron annihilation lifetime spectroscopy (PALS) system has been set up at the superconducting electron accelerator ELBE [ at Helmholtz-Zentrum Dresden-Rossendorf. In contrast to existing source-based PALS systems, the approach described here makes use of an intense photon beam from electron bremsstrahlung which converts through pair production into positrons inside the sample under study. The article focusses on the production of intense bremsstrahlung using a superconducting electron linear accelerator, the production of positrons inside the sample under study, the efficient detector setup which allows for annihilation lifetime and Doppler-broadening spectroscopy simultaneously. Selected examples of positron annihilation spectroscopy are presented.

The Evolution Behavior of Defects in the Nanofilms of W/Cu and W Probed by Doppler Broadening Positron Annihilation Spectroscopy

2017 ◽  
Vol 373 ◽  
pp. 104-107
Author(s):  
Ling Wang ◽  
Ai Hong Deng ◽  
Kang Wang ◽  
Yong Wang ◽  
Xiao Bo Lu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Storage Time ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Radio Frequency Magnetron Sputtering ◽  
Helium Ions ◽  
Near Surface ◽  
Evolution Behavior

W/Cu multilayer nanofilms and pure W nanofilms were prepared in pure Ar and He/Ar mixing atmosphere by radio frequency magnetron sputtering method. The defect evolution of the samples was characterized by Doppler broadening positron annihilation spectroscopy (DB-PAS).The results show that plenty of defects can be produced by introducing helium (He) into W/Cu multilayer nanofilms. With the natural storage time increasing, the helium located in the near surface of W/Cu multilayer nanofilm would be released gradually and induce the coalescence of the helium related defects due to the diffusion of the helium and defects. In addition, the pure W nanofilms were irradiated by 30 keV helium ions and 40 keV hydrogen (H) ions in sequence at room temperature. From the DB-PAS analysis, it can be shown that a large number of vacancy-type defects are produced due to the He and/or H irradiation. H ions would be trapped by He related defects and produced He-H-V complexes.

Annealing of radiation-induced defects in tungsten: Positron annihilation spectroscopy study

2019 ◽  
Vol 517 ◽  
pp. 148-151 ◽  
Author(s):  
O.V. Ogorodnikova ◽  
L. Yu Dubov ◽  
S.V. Stepanov ◽  
D. Terentyev ◽  
Yu.V. Funtikov ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Spectroscopy Study ◽  
Radiation Induced ◽  
Induced Defects

POSITRON INTERACTION IN POLYMERS

2004 ◽  
Vol 19 (23) ◽  
pp. 3951-3959 ◽  
Author(s):  
CORINE BAS ◽  
N. DOMINIQUE ALBÉROLA ◽  
MARIE-FRANCE BARTHE ◽  
JÉRÉMIE De BAERDEMAEKER ◽  
CHARLES DAUWE
Keyword(s):  
Positron Annihilation ◽  
Chemical Structure ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Hole Size ◽  
Doppler Broadening ◽  
Positron Source ◽  
Positron Annihilation Lifetime ◽  
Doppler Broadening Spectra ◽  
Variable Energy

A series of dense copolyimide membranes was characterized using positron annihilation spectroscopy. The positron annihilation lifetime spectroscopy performed on film with a classical positron source gives informations on the positronium fraction formed and also on the hole size within the film. The Doppler broadening spectra (DBS) of the gamma annihilation rays coupled with a variable energy positron beam allow the microstructural analyses as a function of the film depth. Experimental data were also linked to the chemical structure of the polyimides. It was found that the presence of the fluorine atoms strongly affects the positron annihilitation process and especially the DBS responses.

scholarly journals Study of multiblock polyamide-6/Poly-(isoprene) copolymers by positron annihilation spectroscopy

2008 ◽  
Vol 6 (4) ◽  
pp. 575-580 ◽  
Author(s):  
R. Bryaskova ◽  
R. Mateva ◽  
N. Djourelov ◽  
M. Krasteva
Keyword(s):  
Positron Annihilation ◽  
Free Volume ◽  
Main Chain ◽  
Positron Annihilation Spectroscopy ◽  
Polyamide 6 ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Degree Of Crystallinity ◽  
Doppler Broadening ◽  
Annihilation Line ◽  
Positron Annihilation Lifetime

AbstractPositron annihilation lifetime spectroscopy (PALS) has been used to determine the free volume in multiblock polyamide-6/poly-(isoprene) copolymers (PA-6/PI), synthesized via activated anionic bulk copolymerization. The diisocyanate functionalized telechelic PI, blocked with caprolactam (CL) has been used as a commoner and an activator at the same time. The elastic PI block incorporated into the main chain of PA-6 affects the amorphous and crystal phase of the copolymer leading to changing in degree of crystallinity. The positron annihilation lifetime spectroscopy (PAL) and Doppler broadening of annihilation line (DBAL) technique in a set of pure PA-6 and PA-6/PI copolymers with two different compositions have been applied and evaluation of the size of free-volume holes (pores), localized mainly in the disordered regions of the PA-6/PI copolymer by measuring the o-Ps lifetime (τ3) and o-Ps intensity (I3) has been performed.

Effect of Irradiation Doses on AlCu6.5 Alloy Using Positron Annihilation Doppler Broadening Technique

2008 ◽  
Vol 278 ◽  
pp. 15-24
Author(s):  
M. Abdel-Rahman ◽  
Yahia A. Lotfy ◽  
M.A. Abdel-Rahman ◽  
Emad A. Badawi
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Dose Effect ◽  
Doppler Broadening ◽  
Γ Irradiation ◽  
Cu Alloy ◽  
Versatile Tool ◽  
Parameter Values ◽  
Line Shape Parameter

Positron Annihilation Spectroscopy (PAS) is a powerful and versatile tool for the study of the microscopic structure of materials. Doppler Broadening Positron Annihilation Technique (DBPAT) is the fastest technique used among positron annihilation techniques. The dose effect in Al-6.5at. % Cu alloy was investigated by means of DBPAT. An abrupt change in both the S and W line-shape parameter values occurred at 70 kGy of irradiation. The S- and W-Parameters of the trapped positrons at 70 kGy of γ−irradiation dose are about 48 % and 14 % respectively. The S- versus W-parameter reveals a linear relationship indicating the presence of only one type of defect. The S- and W-parameters have been used in the determination of the positron trapping rate and the grain size of the AlCu6.5 alloy.

Study on the Evolution of Defects in Helium-Implanted Tungsten

2017 ◽  
Vol 373 ◽  
pp. 100-103
Author(s):  
Kang Wang ◽  
Ai Hong Deng ◽  
Ling Wang ◽  
Yong Wang ◽  
Xiao Bo Lu ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Positron Annihilation ◽  
Annealing Temperature ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Large Size ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Scanning Electron

The microstructure of He+-irradiation induced defects in tungsten was studied as functions of annealing temperature by means of scanning electron microscope (SEM) and Doppler broadening positron annihilation spectroscopy (DB-PAS). The results show that the S parameter become higher after helium implanted in tungsten. When the annealing temperature increases to 923 K, plenty of large size of holes and new types of defects could be found in this sample.

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