Quantitative analysis of charge transport in intrinsic and doped organic semiconductors combining steady-state and frequency-domain data

2018 ◽  
Vol 124 (10) ◽  
pp. 105501 ◽  
Author(s):  
S. Jenatsch ◽  
S. Altazin ◽  
P.-A. Will ◽  
M. T. Neukom ◽  
E. Knapp ◽  
...  
Keyword(s):  
Steady State ◽  
Quantitative Analysis ◽  
Charge Transport ◽  
Frequency Domain ◽  
Organic Semiconductors

Design and Synthesis of Two-Dimensional Covalent Organic Frameworks with Four-Arm Cores: Prediction of Remarkable Ambipolar Charge-Transport Properties

2019 ◽  
Author(s):  
Simil Thomas ◽  
Hong Li ◽  
Raghunath R. Dasari ◽  
Austin Evans ◽  
William Dichtel ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Density Functional ◽  
Polymer Networks ◽  
Two Dimensional ◽  
Covalent Organic Frameworks ◽  
X Ray Diffraction ◽  
Zinc Porphyrin ◽  
Design And Synthesis ◽  
Predicted Values

<p>We have considered three two-dimensional (2D) π-conjugated polymer networks (i.e., covalent organic frameworks, COFs) materials based on pyrene, porphyrin, and zinc-porphyrin cores connected <i>via</i> diacetylenic linkers. Their electronic structures, investigated at the density functional theory global-hybrid level, are indicative of valence and conduction bands that have large widths, ranging between 1 and 2 eV. Using a molecular approach to derive the electronic couplings between adjacent core units and the electron-vibration couplings, the three π-conjugated 2D COFs are predicted to have ambipolar charge-transport characteristics with electron and hole mobilities in the range of 65-95 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup>. Such predicted values rank these 2D COFs among the highest-mobility organic semiconductors. In addition, we have synthesized the zinc-porphyrin based 2D COF and carried out structural characterization via powder X-ray diffraction and surface area analysis, which demonstrates the feasability of these electroactive networks.</p>

Rational design and crystal structure prediction of ring-fused double-PDI compounds as n-channel organic semiconductors: a DFT study

2021 ◽  
Author(s):  
Suryakanti Debata ◽  
Smruti R. Sahoo ◽  
Rudranarayan Khatua ◽  
Sridhar Sahu
Keyword(s):  
Crystal Structure ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Structure Prediction ◽  
Rational Design ◽  
Molecular Design ◽  
Design Strategy ◽  
Dft Study ◽  
Crystal Structure Prediction ◽  
Model Compounds

In this study, we present an effective molecular design strategy to develop the n-type charge transport characteristics in organic semiconductors, using ring-fused double perylene diimides (DPDIs) as the model compounds.

Charge transport in doped organic semiconductors

2003 ◽  
Vol 68 (8) ◽  
Author(s):  
Yulong Shen ◽  
Kenneth Diest ◽  
Man Hoi Wong ◽  
Bing R. Hsieh ◽  
David H. Dunlap ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors

Charge-Transport in Crystalline Organic Semiconductors with Liquid Crystalline Order.

ChemInform ◽  
2005 ◽  
Vol 36 (44) ◽  
Author(s):  
Panos Vlachos ◽  
Bassam Mansoor ◽  
Matthew P. Aldred ◽  
Mary O'Neill ◽  
Stephen M. Kelly
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Liquid Crystalline ◽  
Crystalline Order

On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  
Keyword(s):  
Charge Transport ◽  
Organic Semiconductors ◽  
Organic Solar Cells ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Electrical Power ◽  
Strong Impact ◽  
Organic Field Effect Transistor ◽  
Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

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