scholarly journals Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance

2018 ◽  
Vol 124 (15) ◽  
pp. 154503 ◽  
Author(s):  
Sheikh Z. Ahmed ◽  
Yaohua Tan ◽  
Daniel S. Truesdell ◽  
Benton H. Calhoun ◽  
Avik W. Ghosh
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Interface Chemistry ◽  
Level Performance

Incorporation of Nitrogen Atoms at Si/SiO2 Interfaces of Field Effect Transistors (FETs) to Improve Device Reliability

1995 ◽  
Vol 405 ◽  
Author(s):  
G. Lucovsky ◽  
D. R. Lee ◽  
Z. Jing ◽  
J. L. Whitten ◽  
C. Parker ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Scale Model ◽  
Budget Process ◽  
Interface Chemistry ◽  
Device Reliability ◽  
On Line ◽  
Low Thermal Budget ◽  
Device Properties ◽  
Improve Device

AbstractIncorporation of N-atoms at the Si-Si02 interface in field effect transistors, FETs, with ultrathin dielectrics (≤ 5.5 nm) improves device reliability. Four aspects of our recent research on nitrided Si-Si02 interfaces are discussed in this paper: i) the low-temperature/low-thermal budget process by which interface chemistry is controlled, and optimized; ii) the use of on-line and off-line diagnostics to determine the spatial confinement and concentration of interfacial N-atom incorporation; iii) comparisons of device properties for non-nitrided and nitrided interfaces; and iv) the proposal of an atom-scale model for the role that interfacial N-atoms play in improving device reliability.

Engineering the Palladium–WSe2 Interface Chemistry for Field Effect Transistors with High-Performance Hole Contacts

2018 ◽  
Vol 2 (1) ◽  
pp. 75-88 ◽  
Author(s):  
Christopher M. Smyth ◽  
Lee A. Walsh ◽  
Pavel Bolshakov ◽  
Massimo Catalano ◽  
Rafik Addou ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Interface Chemistry

Air-Stable n-Channel Organic Single-Crystal Field-Effect Transistors

2008 ◽  
Author(s):  
Takafumi Uemura ◽  
Masakazu Yamagishi ◽  
Yukihiro Tominari ◽  
Jun Takeya
Keyword(s):  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Crystal Field Effect ◽  
Organic Single Crystal

Organic Three-dimensional Field-effect Transistors

2008 ◽  
Author(s):  
M. Uno ◽  
I. Doi ◽  
K. Takimiya ◽  
Jun Takeya
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Three Dimensional
Sign in / Sign up

Export Citation Format

Share Document