ID-HALL, a new double stage Hall thruster design. II. Experimental characterization of the inductive ionization source

2018 ◽  
Vol 25 (9) ◽  
pp. 093504 ◽  
Author(s):  
L. Dubois ◽  
F. Gaboriau ◽  
L. Liard ◽  
C. Boniface ◽  
J. P. Boeuf
Keyword(s):  
Hall Thruster ◽  
Experimental Characterization ◽  
Ionization Source

Development and experimental characterization of a wall-less Hall thruster

2014 ◽  
Vol 116 (24) ◽  
pp. 243302 ◽  
Author(s):  
S. Mazouffre ◽  
S. Tsikata ◽  
J. Vaudolon
Keyword(s):  
Hall Thruster ◽  
Experimental Characterization

scholarly journals Experimental characterization of ID-Hall, a double stage Hall thruster with an inductive ionization stage

2020 ◽  
Vol 27 (2) ◽  
pp. 023518
Author(s):  
A. Martín Ortega ◽  
A. Guglielmi ◽  
F. Gaboriau ◽  
C. Boniface ◽  
J. P. Boeuf
Keyword(s):  
Hall Thruster ◽  
Experimental Characterization

Experimental Characterization of a Micro-Hall Thruster

2007 ◽  
Vol 23 (5) ◽  
pp. 1068-1074 ◽  
Author(s):  
Tsuyohito Ito ◽  
Nicolas Gascon ◽  
W. Scott Crawford ◽  
Mark A. Cappelli
Keyword(s):  
Hall Thruster ◽  
Experimental Characterization

Experimental characterization of Hall thruster breathing mode dynamics

2021 ◽  
Vol 130 (13) ◽  
pp. 133302
Author(s):  
Ethan T. Dale ◽  
Benjamin A. Jorns
Keyword(s):  
Hall Thruster ◽  
Experimental Characterization ◽  
Breathing Mode

Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees

2002 ◽  
Vol 716 ◽  
Author(s):  
C. L. Gan ◽  
C. V. Thompson ◽  
K. L. Pey ◽  
W. K. Choi ◽  
F. Wei ◽  
...  
Keyword(s):  
Stress Conditions ◽  
Experimental Characterization ◽  
Contact Lines ◽  
Tree Structures ◽  
Similar Test ◽  
Dual Damascene ◽  
Copper Interconnect ◽  
Test Conditions

AbstractElectromigration experiments have been carried out on simple Cu dual-damascene interconnect tree structures consisting of straight via-to-via (or contact-to-contact) lines with an extra via in the middle of the line. As with Al-based interconnects, the reliability of a segment in this tree strongly depends on the stress conditions of the connected segment. Beyond this, there are important differences in the results obtained under similar test conditions for Al-based and Cu-based interconnect trees. These differences are thought to be associated with variations in the architectural schemes of the two metallizations. The absence of a conducting electromigrationresistant overlayer in Cu technology, and the possibility of liner rupture at stressed vias lead to significant differences in tree reliabilities in Cu compared to Al.

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