Effect of structural disorder on transport properties of LaNiO3 thin films

2018 ◽  
Vol 124 (6) ◽  
pp. 065302 ◽  
Author(s):  
Yogesh Kumar ◽  
Harsh Bhatt ◽  
C. L. Prajapat ◽  
H. K. Poswal ◽  
S. Basu ◽  
...  
2011 ◽  
Author(s):  
A. K. Debnath ◽  
A. Kumar ◽  
S. Samanta ◽  
A. Singh ◽  
D. K. Aswal ◽  
...  

2010 ◽  
Vol 11 (11) ◽  
pp. 1835-1843 ◽  
Author(s):  
Ajay Singh ◽  
Soumen Samanta ◽  
Arvind Kumar ◽  
A.K. Debnath ◽  
D.K. Aswal ◽  
...  

2018 ◽  
Vol 2 (11) ◽  
Author(s):  
W. C. Yang ◽  
Y. T. Xie ◽  
X. Sun ◽  
X. H. Zhang ◽  
K. Park ◽  
...  

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.


2005 ◽  
Vol 97 (10) ◽  
pp. 10D319 ◽  
Author(s):  
Zhenjun Wang ◽  
Jinke Tang ◽  
Leonard Spinu

2017 ◽  
Vol 50 (27) ◽  
pp. 275004 ◽  
Author(s):  
A E Stanciu ◽  
A Kuncser ◽  
G Schinteie ◽  
P Palade ◽  
A Leca ◽  
...  

2014 ◽  
Vol 104 (24) ◽  
pp. 242113 ◽  
Author(s):  
Sin Cheng Siah ◽  
Sang Woon Lee ◽  
Yun Seog Lee ◽  
Jaeyeong Heo ◽  
Tomohiro Shibata ◽  
...  

1994 ◽  
Vol 235-240 ◽  
pp. 597-598 ◽  
Author(s):  
J. Azoulay ◽  
A. Verdyan ◽  
I. Lapsker

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