scholarly journals Mechanism of electron transport and bipolar resistive switching in lead oxide thin films

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105015 ◽  
Author(s):  
Anatoly A. Petrov ◽  
Natalia V. Andreeva ◽  
Alexey S. Ivanov
Keyword(s):  
Thin Films ◽  
Electron Transport ◽  
Resistive Switching ◽  
Lead Oxide ◽  
Oxide Thin Films ◽  
Bipolar Resistive Switching

Probing the Mechanism for Bipolar Resistive Switching in Annealed Graphene Oxide Thin Films

2018 ◽  
Vol 10 (7) ◽  
pp. 6521-6530 ◽  
Author(s):  
Pooja Saini ◽  
Manjri Singh ◽  
Jyoti Thakur ◽  
Ranjit Patil ◽  
Yuan Ron Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Bipolar Resistive Switching

scholarly journals Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films

2009 ◽  
Vol 95 (16) ◽  
pp. 162108 ◽  
Author(s):  
Hu Young Jeong ◽  
Jeong Yong Lee ◽  
Sung-Yool Choi ◽  
Jeong Won Kim
Keyword(s):  
Thin Films ◽  
Titanium Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Bipolar Resistive Switching ◽  
Microscopic Origin

scholarly journals Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

2018 ◽  
Vol 123 (4) ◽  
pp. 044502 ◽  
Author(s):  
Jonathan A. J. Rupp ◽  
Madec Querré ◽  
Andreas Kindsmüller ◽  
Marie-Paule Besland ◽  
Etienne Janod ◽  
...  
Keyword(s):  
Thin Films ◽  
Vanadium Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Bipolar Resistive Switching ◽  
Vanadium Oxide Thin Films

Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

2012 ◽  
Vol 101 (6) ◽  
pp. 063104 ◽  
Author(s):  
S. Pinto ◽  
R. Krishna ◽  
C. Dias ◽  
G. Pimentel ◽  
G. N. P. Oliveira ◽  
...  
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Doped Graphene ◽  
Activity Dependent

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

scholarly journals Effects of the thickness on resistive switching characteristics of CrOx thin films

2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Resistive Switching ◽  
High Reliability ◽  
Switching Behavior ◽  
Ftir Analysis ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Structure Surface ◽  
Switching Characteristics

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.

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