Atomic scale switches based on self-assembled surface magic clusters

2018 ◽  
Vol 112 (25) ◽  
pp. 253103 ◽  
Author(s):  
Martin Franz ◽  
Chiara Panosetti ◽  
Jan Große ◽  
Tim Amrhein ◽  
Karsten Reuter ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Magic Clusters ◽  
Self Assembled

Growth and Overgrowth of Ge/Si Quantum Dots: An Observation by Atomic Resolution HAADF-STEM Imaging

2004 ◽  
Vol 832 ◽  
Author(s):  
Dan Zhi ◽  
Paul A. Midgley ◽  
Rafal E. Dunin-Borkowski ◽  
Bruce A. Joyce ◽  
Don W. Pashley ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Direct Analysis ◽  
Lateral Spreading ◽  
Dark Field ◽  
Atomic Scale ◽  
Wetting Layer ◽  
Compositional Evolution ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Self Assembled

ABSTRACTThe formation of self-assembled quantum dots (QD) is of increasing interest for applications in optical, nanoelectronic, biological and quantum computing systems. From the perspective of fabrication technology, there are great advantages if the whole device can be made using a single Si substrate. Furthermore, GeSi is a model semiconductor system for fundamental studies of growth and material properties. In practice, as the MBE growth of heterostructures is inherently a non-equilibrium process, the formation of self-assembled nanostructures is both complex and sensitive to growth and overgrowth conditions. The morphology, structure and composition of QDs can all change during growth. It is therefore crucial to understand their structures at different stages of growth at the atomic scale. Here, the characterization of QD growth using high-resolution high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) imaging is presented. Both the formation of uncapped QDs and the effect of the encapsulation are investigated, and the morphological and compositional evolution of the QDs and wetting layers are observed directly at the atomic scale for the first time. During encapsulation, the Ge content in the centres of the QD remains unchanged, despite significant intermixing, lateral spreading and a laterally inhomogeneous Ge distribution inside the Ge QD. The initial non-uniform wetting layer for the uncapped Ge QD becomes uniform after encapsulation, and a 3-monolayer-thick core with ∼ 60% Ge content is formed in the 2 nm-thick wetting layer with an average Ge content of ∼ 30%. The results were obtained by direct analysis of the Z-contrast STEM imaging without involving complex image simulations.

Structural investigation of organosilane self-assembled monolayers by atomic scale simulation

2006 ◽  
Vol 132 ◽  
pp. 189-193 ◽  
Author(s):  
H. Yamamoto ◽  
T. Watanabe ◽  
K. Nishiyama ◽  
K. Tatsumura ◽  
I. Ohdomari
Keyword(s):  
Structural Investigation ◽  
Atomic Scale ◽  
Self Assembled Monolayers ◽  
Assembled Monolayers ◽  
Self Assembled

scholarly journals Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

2005 ◽  
Vol 87 (13) ◽  
pp. 131902 ◽  
Author(s):  
P. Offermans ◽  
P. M. Koenraad ◽  
J. H. Wolter ◽  
D. Granados ◽  
J. M. García ◽  
...  
Keyword(s):  
Scale Structure ◽  
Atomic Scale ◽  
Quantum Rings ◽  
Atomic Scale Structure ◽  
Self Assembled

Atomic-scale X-ray structural analysis of self-assembled monolayers on Silicon

2009 ◽  
Vol 167 (1) ◽  
pp. 33-39 ◽  
Author(s):  
J.-C. Lin ◽  
J. A. Kellar ◽  
J.-H. Kim ◽  
N. L. Yoder ◽  
K. H. Bevan ◽  
...  
Keyword(s):  
Structural Analysis ◽  
Atomic Scale ◽  
Self Assembled Monolayers ◽  
X Ray ◽  
Assembled Monolayers ◽  
Self Assembled

The Pentagonal Nature of Self-Assembled Silicon Chains and Magic Clusters on Ag(110)

Nano Letters ◽  
2018 ◽  
Vol 18 (5) ◽  
pp. 2937-2942 ◽  
Author(s):  
Shaoxiang Sheng ◽  
Runze Ma ◽  
Jiang-bin Wu ◽  
Wenbin Li ◽  
Longjuan Kong ◽  
...  
Keyword(s):  
Magic Clusters ◽  
Self Assembled

scholarly journals Tunnel-Coupled Quantum Dots: Atomistic Theory of Quantum Dot Molecules and Arrays

2002 ◽  
Vol 737 ◽  
Author(s):  
Garnett W. Bryant ◽  
Javier Aizpurua ◽  
W. Jaskolski ◽  
Michal Zielinski
Keyword(s):  
Quantum Dot ◽  
Tight Binding ◽  
Atomic State ◽  
Atomic Scale ◽  
Binding Theory ◽  
Electron States ◽  
Quantum Dot Molecules ◽  
Artificial Molecule ◽  
Self Assembled ◽  
Envelope Functions

ABSTRACTAn understanding of how dots couple in quantum dot molecules and arrays is needed so that the possibilities for tailored nanooptics in these systems can be explored. The properties of tunnel-coupled dots will be determined by how the dots couple through atomic-scale junctions. We present an atomistic empirical tight-binding theory of coupled, CdS nanocrystal artificial-molecules, vertically and laterally coupled InAs/GaAs self-assembled dots, and arrays of InAs/GaAs self-assembled dots. Electron states follow the artificial molecule analogy. The coupling of hole states is much more complex. There are significant departures from the artificial molecule analogy because the interdot hole coupling is determined by the hole envelope functions, as for the electron states, and by the hole atomic state near interdot interfaces.

Cooperative phenomena in self-assembled nucleation of 3×4-In/Si(100) surface magic clusters

2010 ◽  
Vol 604 (13-14) ◽  
pp. 1116-1120 ◽  
Author(s):  
O.A. Utas ◽  
N.V. Denisov ◽  
V.G. Kotlyar ◽  
A.V. Zotov ◽  
A.A. Saranin ◽  
...  
Keyword(s):  
Cooperative Phenomena ◽  
Magic Clusters ◽  
Self Assembled
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