scholarly journals Evaluating the impact of thermal annealing on c-Si/Al2O3 interface: Correlating electronic properties to infrared absorption

AIP Advances ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 075204 ◽  
Author(s):  
C.-Y. Lee ◽  
S. Deng ◽  
T. Zhang ◽  
X. Cui ◽  
K. T. Khoo ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Thermal Annealing ◽  
Infrared Absorption ◽  
The Impact

The impact of substrate properties and thermal annealing on tantalum nitride thin films

2012 ◽  
Vol 258 (7) ◽  
pp. 2894-2900 ◽  
Author(s):  
M. Grosser ◽  
M. Münch ◽  
H. Seidel ◽  
C. Bienert ◽  
A. Roosen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Tantalum Nitride ◽  
Substrate Properties ◽  
The Impact

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

scholarly journals Impact of Nanoparticle Consolidation on Charge Separation Efficiency in Anatase TiO2 Films

2021 ◽  
Vol 9 ◽  
Author(s):  
Karin Rettenmaier ◽  
Thomas Berger
Keyword(s):  
Thermal Annealing ◽  
Charge Separation ◽  
Separation Efficiency ◽  
Internal Surface ◽  
Processing Temperature ◽  
Cyclic Voltammograms ◽  
Internal Surface Area ◽  
Deep Traps ◽  
Charge Separation Efficiency ◽  
The Impact

Mesoporous films and electrodes were prepared from aqueous slurries of isolated anatase TiO2 nanoparticles. The resulting layers were annealed in air at temperatures 100°C ≤ T ≤ 450°C upon preservation of internal surface area, crystallite size and particle size. The impact of processing temperature on charge separation efficiency in nanoparticle electrodes was tracked via photocurrent measurements in the presence of methanol as a hole acceptor. Thermal annealing leads to an increase of the saturated photocurrent and thus of the charge separation efficiency at positive potentials. Furthermore, a shift of capacitive peaks in the cyclic voltammograms of the nanoparticle electrodes points to the modification of the energy of deep traps. Population of these traps triggers recombination possibly due to the action of local electrostatic fields attracting photogenerated holes. Consequently, photocurrents saturate at potentials, at which deep traps are mostly depopulated. Charge separation efficiency was furthermore investigated for nanoparticle films and was tracked via the decomposition of hydrogen peroxide. Our observations evidence an increase of charge separation efficiency upon thermal annealing. The effect of particle consolidation, which we associate with minute atomic rearrangements at particle/particle contacts, is attributed to the energetic modification of deep traps and corresponding modifications of charge transport and recombination, respectively.

Atomic structures and electronic properties of Ta-doped 2H-NbSe2

RSC Advances ◽  
2014 ◽  
Vol 4 (101) ◽  
pp. 57541-57546 ◽  
Author(s):  
Hongping Li ◽  
Shuai Liu ◽  
Lin Chen ◽  
Jun Wu ◽  
Peng Zhang ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
First Principles Calculations ◽  
Atomic Structures ◽  
The Impact ◽  
Ta Doping

First-principles calculations are conducted to investigate the impact of Ta doping on the atomistic structures and electronic properties of the technologically relevant 2H-NbSe2.

Defects of monolayer PbI2: a computational study

2021 ◽  
Vol 23 (36) ◽  
pp. 20553-20559
Author(s):  
Han Wang ◽  
Xiao Wang ◽  
Da Li
Keyword(s):  
Dft Calculations ◽  
Electronic Properties ◽  
Systematic Study ◽  
Computational Study ◽  
The Stability ◽  
The Impact

We performed a systematic study on the defects in PbI2 of both 1T and 1H phases by DFT calculations. The stability at the neutral and charged states was calculated. The impact of the defects on the electronic properties was also discussed.

scholarly journals The Electronic Properties of Extended Defects in SrTiO3—A Case Study of a Real Bicrystal Boundary

Crystals ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 665 ◽  
Author(s):  
Christian Rodenbücher ◽  
Dominik Wrana ◽  
Thomas Gensch ◽  
Franciszek Krok ◽  
Carsten Korte ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Boundary Region ◽  
Thermal Reduction ◽  
Fluorescence Lifetime Imaging ◽  
Extended Defects ◽  
Force Microscopy ◽  
Ab Initio Simulations ◽  
Complementary Method ◽  
Inhomogeneous Properties ◽  
The Impact

This study investigates the impact of extended defects such as dislocations on the electronic properties of SrTiO3 by using a 36.8° bicrystal as a model system. In order to evaluate the hypothesis that dislocations can serve as preferential reduction sites, which has been proposed in the literature on the basis of ab initio simulations, as well as on experiments employing local-conductivity atomic force microscopy (LC-AFM), detailed investigations of the bicrystal boundary are conducted. In addition to LC-AFM, fluorescence lifetime imaging microscopy (FLIM) is applied herein as a complementary method for mapping the local electronic properties on the microscale. Both techniques confirm that the electronic structure and electronic transport in dislocation-rich regions significantly differ from those of undistorted SrTiO3. Upon thermal reduction, a further confinement of conductivity to the bicrystal boundary region was found, indicating that extended defects can indeed be regarded as the origin of filament formation. This leads to the evolution of inhomogeneous properties of defective SrTiO3 on the nano- and microscales.

The impact of thermal annealing on the temperature dependent resistance behavior of Pt thin films sputtered on Si and Al2O3 substrates

2019 ◽  
Vol 685 ◽  
pp. 372-378 ◽  
Author(s):  
Xingkai Lin ◽  
Congchun Zhang ◽  
Shenyong Yang ◽  
Wei Guo ◽  
Yu Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Temperature Dependent ◽  
The Impact

scholarly journals Unraveling the impact of the Pd nanoparticle@BiVO4/S-CN heterostructure on the photo-physical & opto-electronic properties for enhanced catalytic activity in water splitting and one-pot three-step tandem reaction

2019 ◽  
Vol 1 (4) ◽  
pp. 1395-1412 ◽  
Author(s):  
Subhajyoti Samanta ◽  
Biswarup Satpati ◽  
Rajendra Srivastava
Keyword(s):  
Catalytic Activity ◽  
Electronic Properties ◽  
Water Splitting ◽  
Tandem Reaction ◽  
One Pot ◽  
Pd Nanoparticle ◽  
The Impact

Influence of Pd NPs in the BiVO4/S-CN photocatalyst is demonstrated for the efficient water splitting and imine synthesis via tandem reaction.

Investigating the impact of thermal annealing on the photovoltaic performance of chemical bath deposited SnO2/p-Si heterojunction solar cells

2019 ◽  
Vol 26 (4) ◽  
pp. 1351-1358 ◽  
Author(s):  
Anannya Bhattacharya ◽  
Jenifar Sultana ◽  
Subhrajit Sikdar ◽  
Rajib Saha ◽  
Sanatan Chattopadhyay
Keyword(s):  
Solar Cells ◽  
Thermal Annealing ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
The Impact
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