Effect of growth temperature and precursor concentration on synthesis of CVD-graphene from camphor

2018 ◽  
Author(s):  
Narasimman Rajaram ◽  
Biren Patel ◽  
Abhijit Ray ◽  
Indrajit Mukhopadhyay
Keyword(s):  
Growth Temperature ◽  
Precursor Concentration ◽  
Cvd Graphene

scholarly journals Decreasing graphene synthesis temperature by catalytic metal engineering and thermal processing

RSC Advances ◽  
2018 ◽  
Vol 8 (3) ◽  
pp. 1477-1480
Author(s):  
Li Zheng ◽  
Xinhong Cheng ◽  
Peiyi Ye ◽  
Lingyan Shen ◽  
Qian Wang ◽  
...  
Keyword(s):  
Growth Temperature ◽  
Thermal Processing ◽  
Synthesis Temperature ◽  
Graphene Growth ◽  
Cvd Graphene ◽  
Graphene Synthesis ◽  
Catalytic Metal

The CVD graphene growth temperature can be lowered to 700 °C by copper engineering with carbon implantation.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

scholarly journals Influence of Active Channel Layer Thickness on SnO2 Thin-Film Transistor Performance

Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 200
Author(s):  
Do Won Kim ◽  
Hyeon Joong Kim ◽  
Changmin Lee ◽  
Kyoungdu Kim ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Thin Film Transistor ◽  
Sol Gel ◽  
Precursor Concentration ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Si Substrates ◽  
Channel Layer ◽  
Active Channel

Sol-gel processed SnO2 thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The SnO2 active channel layer was deposited by the sol-gel spin coating method. Precursor concentration influenced the film thickness and surface roughness. As the concentration of the precursor was increased, the deposited films were thicker and smoother. The device performance was influenced by the thickness and roughness of the SnO2 active channel layer. Decreased precursor concentration resulted in a fabricated device with lower field-effect mobility, larger subthreshold swing (SS), and increased threshold voltage (Vth), originating from the lower free carrier concentration and increase in trap sites. The fabricated SnO2 TFTs, with an optimized 0.030 M precursor, had a field-effect mobility of 9.38 cm2/Vs, an SS of 1.99, an Ion/Ioff value of ~4.0 × 107, and showed enhancement mode operation and positive Vth, equal to 9.83 V.

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

scholarly journals Characteristics of Phomopsis juglandina (Sacc.) Hohn. Associated with Dieback of Walnut in the Climatic Conditions of Southern Romania

Agronomy ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 46
Author(s):  
Cristina Mihaescu ◽  
Daniel Dunea ◽  
Adrian Gheorghe Bășa ◽  
Loredana Neagu Frasin
Keyword(s):  
Growth Temperature ◽  
Potential Evapotranspiration ◽  
Optimal Growth ◽  
Climatic Conditions ◽  
Cultural Characteristics ◽  
Optimal Growth Temperature ◽  
Conidial State ◽  
Optimal Ph

Phomopsis juglandina (Sacc.) Höhn., which is the conidial state of Diaporthe juglandina (Fuckel) Nitschke, and the main pathogen causing the dieback of branches and twigs of walnut was recently detected in many orchards from Romania. The symptomatological, morphological, ultrastructural, and cultural characteristics, as well as the pathogenicity of an isolate of this lignicolous fungus, were described and illustrated. The optimum periods for infection, under the conditions prevailing in Southern Romania, mainly occur in the spring (April) and autumn months (late September-beginning of October). Strong inverse correlations (p < 0.001) were found between potential evapotranspiration and lesion lengths on walnut branches in 2019. The pathogen forms two types of phialospores: alpha and beta; the role of beta phialospores is not well known in pathogenesis. In Vitro, the optimal growth temperature of mycelial hyphae was in the range of 22–26 °C, and the optimal pH is 4.4–7. This pathogen should be monitored continuously due to its potential for damaging infestations of intensive plantations.

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