Control surface morphology, structural and optical properties of Cu2O nanocrystals by using the hydrothermal technique

2018 ◽  
Author(s):  
A. Viswanath Gowd ◽  
R. Thangavel
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Control Surface ◽  
Structural And Optical Properties ◽  
Hydrothermal Technique

scholarly journals Surface Morphology, Structural and Optical Properties of MgO Films Obtained by Spray Pyrolysis Technique

2016 ◽  
Vol 130 (3) ◽  
pp. 805-810 ◽  
Author(s):  
O.V. Diachenko ◽  
A.S. Opanasuyk ◽  
D.I. Kurbatov ◽  
N.M. Opanasuyk ◽  
O.K. Kononov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Structural And Optical Properties

scholarly journals Effect of Annealing Temperature on the Structural and Optical Properties of TiO2 Thin Film Prepared by Sol-gel Method

2016 ◽  
Vol 8 (3) ◽  
pp. 267-272 ◽  
Author(s):  
F. U. Khan ◽  
M. Zubair ◽  
M. Z. Ansar ◽  
M. K. Alamgir ◽  
S. Nadeem
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Surface Morphology ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Rutile Phase ◽  
Structural And Optical Properties ◽  
Tio2 Thin Films ◽  
Different Temperatures ◽  
Xrd Patterns

The effect of annealing temperatures on the surface morphology and optical properties of titanium dioxide (TiO2) thin films deposited by spin coating on Silicon substrate was studied. The TiO2 thin films deposited onto silicon substrates were annealed at different temperatures. The structural and optical properties were studied using scanning electron microscopy (SEM), X-ray diffraction technique (XRD) and optical ellipsometer. The results indicated that the structural properties of the TiO2 thin films were changed with the increase in annealing temperature. The SEM investigation showed that as annealing temperature was increased, the grain and pores size were increased. The XRD patterns of the studied samples showed that rutile phase were found in a sample annealed at high temperature. The ellipsometry investigation shows that the refractive index increased while energy band gap decreased with the annealing temperature. The results showed that surface porosity, optical properties and surface morphology of TiO2 could be affected by changing the annealing temperature.   

Synthesis, structural and optical properties of pure and rare-earth ion doped TiO2 nanowire arrays by a facile hydrothermal technique

2013 ◽  
Vol 547 ◽  
pp. 207-211 ◽  
Author(s):  
Vengala Rao Bandi ◽  
Chinnambedu Murugesan Raghavan ◽  
Bhaskar kumar Grandhe ◽  
Sang Su Kim ◽  
Kiwan Jang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Rare Earth ◽  
Nanowire Arrays ◽  
Structural And Optical Properties ◽  
Rare Earth Ion ◽  
Hydrothermal Technique ◽  
Doped Tio2 ◽  
Tio2 Nanowire

The Effect of Buffer Layers in Mocvd Growth of Gan Film on 3C-SiC/Si Substrate

2000 ◽  
Vol 639 ◽  
Author(s):  
C. I. Park ◽  
J. H. Kang ◽  
K. C. Kim ◽  
K. Y. Lim ◽  
E.-K. Suh ◽  
...  
Keyword(s):  
Optical Properties ◽  
Surface Morphology ◽  
Buffer Layer ◽  
Buffer Layers ◽  
Band Edge ◽  
Band Edge Emission ◽  
Si Substrate ◽  
Structural And Optical Properties ◽  
Gan Film ◽  
Gan Buffer Layer

ABSTRACTThe growth of GaN films on Si substrates is very attractive work because of irreplaceable merits of Si wafer such as low cost, high surface quality, large area wafer availability, high conductivity and well-established processing techniques.In this work, we studied the effect of buffer layers to grow high quality GaN films on 3C- SiC/Si(111) substrates. GaN films were grown on 3C-SiC/Si(111) by metalorganic chemical vapor deposition (MOCVD) using various buffer layers (GaN, AlN, and superlattice). The surface morphology and structural and optical properties of GaN films were investigated with atomic force microscopy (AFM), x-ray diffraction (XRD), Raman spectroscopy, and Photoluminescence (PL), respectively. GaN films grown using superlattice buffer layer showed only c-oriented (0002) plane of GaN from the XRD analysis. Raman spectra showed that the E2 high mode agreed with the selection rule was well observed in all GaN films. The A1(TO) and E1(TO) mode were appeared for GaN grown without buffer layer, whereas the E1(TO) mode was additionally appeared in the GaN films grown with GaN buffer layer. In the PL spectra at low temperature, the peaks associated with band edge emission and donor-accepter pair (D0A0) were observed in GaN films grown without buffer layer or with GaN buffer layer and AlN buffer layer. GaN films grown with superlattice buffer layer showed band edge and very weak D0A0 emission. The root mean square (RMS) roughness of the GaN film grown on superlattice buffer layer was only 4.21 Å Our experimental results indicated that the buffer layer affects crucially the qualities of GaN films grown on the 3C-SiC/Si substrate. Superlattice buffer layer improved the surface morphology as well as structural and optical properties of GaN films.

Structural and optical properties of Sn doped ZnO-rGO nanostructures using hydrothermal technique

2020 ◽  
Vol 26 ◽  
pp. 3522-3525 ◽  
Author(s):  
A. Priyadharsan ◽  
S. Shanavas ◽  
C. Vidya ◽  
J. Kalyana Sundar ◽  
R. Acevedo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Structural And Optical Properties ◽  
Hydrothermal Technique ◽  
Doped Zno

scholarly journals Structural and Optical Properties of ZnO-CdO Nanocomposite Using Electrodeposition Method

2016 ◽  
Vol 63 ◽  
pp. 127-133 ◽  
Author(s):  
Zehraa N. Abdul-Ameer ◽  
Ibrahim R. Agool
Keyword(s):  
Grain Size ◽  
Optical Properties ◽  
Surface Morphology ◽  
Electrochemical Deposition ◽  
Energy Gap ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Optical Energy Gap ◽  
X Ray ◽  
Shift Behavior

ZnO,CdO,ZnO-CdO nanocomposite were prepared using electrochemical deposition the prepared samples were characterized using X-ray diffraction and the photoluminenscence spectroscopy (PL) to get the surface morphology leading to calculation of optical energy gap .the grain size determined by Scherrer's equation (22-25) nm .through the calculation of Eg ,it was noticed a red shift behavior in ZnO manner due to addition of CdO content

The Surface Morphology and Mechanical Behavior Studies of DAST Crystal on (001) and (110) Faces

2011 ◽  
Vol 197-198 ◽  
pp. 358-361 ◽  
Author(s):  
Hui Xu ◽  
Bing Teng ◽  
Zheng He Yu ◽  
Fei You ◽  
De Gao Zhong ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Surface Morphology ◽  
Mechanical Behavior ◽  
Vickers Hardness ◽  
Soft Material ◽  
Index Number ◽  
Structural And Optical Properties ◽  
Scanning Electron

4-dimethyla-mino-N-methyl 4-stilbazolium tosylate（DAST） crystals were prepared by the slope nucleation method (SNM). The structural and optical properties of the grown crystals were studied by employing powder XRD and FIIR. The surface morphology of DAST crystals was observed by scanning electron microscope (SEM). The Vickers hardness studies were carried out on (001) and (110) faces of grown DAST crystal. The values of Meyer’s index number n and hardness were calculated from Hv. The results showed that the DAST crystals belong to the soft material category.

Epitaxal growth of InGaN quantum dots grown by MOVPE: Effect of capping process on the structural and optical properties

2005 ◽  
Vol 892 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Kathrin Sebald ◽  
Juergen Gutowski ◽  
Stephan Figge ◽  
Detlef Hommel
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Surface Morphology ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Electronic States ◽  
The Other ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency ◽  
Protection Layer

AbstractThe surface morphology of thin InxGa1-xN layers in uncapped structures and the overgrowth using GaN or InxGa1-xN with a lower In content than the InxGa1-xN layer as the protection layer of the InxGa1-xN layer were investigated in addition to their dependence on growth temperature during the growth by metalorganic vapor phase epitaxy (MOVPE). It was necessary to decrease the growth temperature of the InxGa1-xN layer in order to realize homogeneous dots. In order to obtain a high luminescence efficiency, on the other hand, it was essential to increase the growth temperature of the protection layer. Sharp lines related to the localized electronic states, which are attributed to InGaN quantum dots, were observed by micro-photoluminescence (μ-PL) for the samples with the InxGa1-xN layers protected by the InxGa1-xN layers grown at 700∼740°C.

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