Numerical study of slip system activity and crystal lattice rotation under wedge nanoindents in tungsten single crystals

2018 ◽  
Author(s):  
T. Volz ◽  
R. Schwaiger ◽  
J. Wang ◽  
S. M. Weygand
Keyword(s):  
Slip System ◽  
Crystal Lattice ◽  
Single Crystals ◽  
Numerical Study ◽  
Lattice Rotation ◽  
System Activity

scholarly journals Calculation of the slip system activity in deformed zinc single crystals using digital 3-D image correlation data

2006 ◽  
Vol 86 (12) ◽  
pp. 795-805 ◽  
Author(s):  
J. N. Florando ◽  
M. Rhee ◽  
A. Arsenlis ◽  
M. M. LeBlanc ◽  
D. H. Lassila
Keyword(s):  
Slip System ◽  
Single Crystals ◽  
Image Correlation ◽  
System Activity ◽  
Correlation Data

Effect of rate sensitivity on slip system activity and lattice rotation

1988 ◽  
Vol 36 (8) ◽  
pp. 1961-1970 ◽  
Author(s):  
G.R Canova ◽  
C Fressengeas ◽  
A Molinari ◽  
U.F Kocks
Keyword(s):  
Slip System ◽  
Rate Sensitivity ◽  
Lattice Rotation ◽  
System Activity

scholarly journals The Stress Induced Martensite-Austenite Interface in Fe-15Ni-15Cr Single Crystals

1973 ◽  
Vol 31 ◽  
pp. 110-111
Author(s):  
G. A. Stone ◽  
G. Thomas
Keyword(s):  
Shear Stress ◽  
Slip System ◽  
Single Crystal ◽  
Single Crystals ◽  
Habit Plane ◽  
Maximum Shear Stress ◽  
Crystal Axis ◽  
Surface Study

A single crystal stressed in the [3]𝛄 direction at 185°K was transformed to 5% 𝛂 martensite and 2% Ɛ martensite by volume. The austenite slip system of maximum shear stress is the (11)𝛄 [01)𝛄. Fig. 1 shows a two surface study using the electron and optical microscopes. The a martensite is confined between £martensite plates with the (0001)Ɛ ∥ (11)𝛄. The size of the acicular martensite crystals is controlled by the spacing of the £ martensite plates. These £ martensite plates are seen in Fig. 1A as dark vertical bands. The axes of the acicular crystals lie in the (11)𝛄 plane. The £ martensite habit plane is defined as the plane perpendicular to the (11)𝛄 containing the vector defining the crystal axis.

Tensile Deformation of Si Single Crystals at High Temperatures

2021 ◽  
Vol 1016 ◽  
pp. 1443-1447
Author(s):  
Tubasa Suzuki ◽  
Masaki Tanaka ◽  
Tatsuya Morikawa ◽  
Yelm Okuyama ◽  
Jun Fujise ◽  
...  
Keyword(s):  
Slip System ◽  
Single Crystals ◽  
Tensile Deformation ◽  
Tensile Tests ◽  
Stage Ii ◽  
Electron Backscattered Diffraction ◽  
Kink Bands ◽  
Schmid Factor ◽  
Primary Slip System ◽  
Yield Point Phenomenon

Czochralski silicon single crystals were deformed in tensile tests along the direction at between 1173 K and 1373. Yield point phenomenon were observed in the specimens deformed at below 1273 K while continues yield was observed in the specimens deformed at above 1323 K. It is due to the effect of dislocation starvation in the used crystals. Work-hardening rates in stage II were consistent with those reported in fcc crystals such as copper. The onset of stage II was found to be active before the Schmid factor of the second slip system becomes larger than that of the primary slip system. Electron backscattered diffraction images indicated clear kink bands near grips and in the parallel portion. The kink bands were formed at the middle of stage I, which suggest that the formation of kink bands is a trigger of stage II.

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