Ionic displacement induced ferroelectricity in multiferroic Cr doped ZnO

2018 ◽  
Author(s):  
Jeetendra Kumar Tiwari ◽  
Nasir Ali ◽  
Subhasis Ghosh
Keyword(s):  
Ionic Displacement ◽  
Doped Zno

V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films

2007 ◽  
Vol 90 (24) ◽  
pp. 242903 ◽  
Author(s):  
Y. C. Yang ◽  
C. Song ◽  
F. Zeng ◽  
F. Pan ◽  
Y. N. Xie ◽  
...  
Keyword(s):  
Zno Films ◽  
Ferroelectric Behavior ◽  
Ionic Displacement ◽  
Doped Zno

High Rate Deposition of Al-doped ZnO (AZO) by Reactive Sputtering (1); Unipolar Pulsing with Plasma Emission Control

2008 ◽  
Author(s):  
Yuzo Shigesato ◽  
Kento Hirohata ◽  
Yasutaka Nishi ◽  
Nobuto Oka ◽  
Yasushi Sato ◽  
...  
Keyword(s):  
Emission Control ◽  
Reactive Sputtering ◽  
High Rate ◽  
Plasma Emission ◽  
Doped Zno

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Influence of N Dopant on the Electric and Magnetic Properties of Co Doped ZnO Thin Films

2010 ◽  
Vol 25 (7) ◽  
pp. 711-716 ◽  
Author(s):  
Xue-Tao WANG ◽  
Li-Ping ZHU ◽  
Zhi-Gao YE ◽  
Zhi-Zhen YE ◽  
Bing-Hui ZHAO
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Synthesis of Multi-shelled Mn-doped ZnO ∞ Hollow spheres

2009 ◽  
Author(s):  
Zheng-Zheng LI ◽  
Yong ZHANG ◽  
Zhi-Zhan CHEN ◽  
Er-Wei SHI
Keyword(s):  
Hollow Spheres ◽  
Doped Zno ◽  
Mn Doped ◽  
Zno Hollow Spheres

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure
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