Characterization of aluminum selenide bi-layer thin film

2018 ◽  
Author(s):  
Sarita Boolchandani ◽  
Gyanesh Soni ◽  
Subodh Srivastava ◽  
Y. K. Vijay
Keyword(s):  
Thin Film ◽  
Layer Thin Film

Design and characterization of CPW feedthroughs in multi-layer thin-film MCM-D

2002 ◽  
Author(s):  
G. Carchon ◽  
O. Di Monaco ◽  
K. Vaesen ◽  
S. Brebels ◽  
W. De Raedt ◽  
...  
Keyword(s):  
Thin Film ◽  
Layer Thin Film

Basic Studies of Multi-Layer Thin Film Analysis Using Fundamental Parameter Method

1989 ◽  
Vol 33 ◽  
pp. 213-223
Author(s):  
Y. Kataoka ◽  
T. Arai
Keyword(s):  
Thin Film ◽  
Fluorescence Analysis ◽  
Parameter Method ◽  
Fundamental Parameter ◽  
X Ray ◽  
Basic Studies ◽  
Layer Thin Film ◽  
Non Destructive ◽  
Fundamental Parameter Method

X-ray fluorescence analysis is the most suitable method, for the characterization of the thickness and the chemical composition of thin film samples. It is non-destructive, rapid, precise, and accurate for both metal and oxide samples.

Effect of Single Layer Thin Film Thermal Barrier Coatings on Mechanical, Thermal and Tribological Characterization of Cast Iron (GJL 300)

2021 ◽  
Author(s):  
Raja Velusamy ◽  
Mangudi Rangaswamy Swaminathan ◽  
Hariharan Periyana Pillai ◽  
Suresh Babu Annamalai ◽  
Sakthinathan Ganapathy ◽  
...  
Keyword(s):  
Thin Film ◽  
Cast Iron ◽  
Thermal Barrier Coatings ◽  
Single Layer ◽  
Thermal Barrier ◽  
Barrier Coatings ◽  
Layer Thin Film ◽  
Tribological Characterization

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

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