Comparison of unit cell coupling for grating‐gate and high electron mobility transistor array THz resonant absorbers

2018 ◽  
Vol 124 (9) ◽  
pp. 093101 ◽  
Author(s):  
Hugo O. Condori Quispe ◽  
Ashish Chanana ◽  
Jimy Encomendero ◽  
Mingda Zhu ◽  
Nicole Trometer ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Unit Cell ◽  
High Electron ◽  
Cell Coupling ◽  
High Electron Mobility

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

Current collapse degradation in GaN High Electron Mobility Transistor by virtual gate

2021 ◽  
pp. 105293
Author(s):  
D. Godfrey ◽  
D. Nirmal ◽  
L. Arivazhagan ◽  
D. Godwinraj ◽  
N. MohanKumar ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Current Collapse
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