scholarly journals Alloy disorder limited mobility of InGaN two-dimensional electron gas

2018 ◽  
Vol 112 (26) ◽  
pp. 262101 ◽  
Author(s):  
P. Sohi ◽  
J.-F. Carlin ◽  
N. Grandjean
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Limited Mobility ◽  
Alloy Disorder ◽  
Dimensional Electron Gas

Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures

2009 ◽  
Vol 106 (2) ◽  
pp. 023715 ◽  
Author(s):  
V. M. Polyakov ◽  
F. Schwierz ◽  
I. Cimalla ◽  
M. Kittler ◽  
B. Lübbers ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Limited Mobility ◽  
Dimensional Electron Gas

scholarly journals Influence of AlN/GaN interfacial non-idealities on the properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

2021 ◽  
Vol 2103 (1) ◽  
pp. 012202
Author(s):  
D S Arteev ◽  
A V Sakharov ◽  
W V Lundin ◽  
E E Zavarin ◽  
A F Tsatsulnikov
Keyword(s):  
Electron Gas ◽  
Atomic Diffusion ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Moderate Amount ◽  
Alloy Disorder ◽  
Dimensional Electron Gas ◽  
Gan Heterostructure ◽  
Disorder Scattering

Abstract The influence of two types of AlN/GaN interfacial non-idealities, namely unintentional Ga incorporation into AlN spacer and blurring of the spacer due to Al and/or Ga atomic diffusion on the mobility and density of two-dimensional electron gas in AlGaN/AlN/GaN heterostructure was studied theoretically. It was found that moderate amount of GaN in the nominal AlN spacer does not affect much the mobility and density of 2DEG as long as the interface is abrupt. In contrast, the blurring of AlN/GaN interface was found to have a significant impact on the mobility and sheet resistance of the structure since the GaN channel actually becomes AlGaN and alloy-disorder scattering takes place.

scholarly journals Transport Properties of A Quasi-two-dimensional Electron Gas in InP/In\(_{1 - x}\)Ga\(_{x}\)As/InP Quantum Wells : Correlation and Magnetic Field Effects

2015 ◽  
Vol 25 (2) ◽  
pp. 125
Author(s):  
Nguyen Quoc Khanh ◽  
Mai Thanh Huyen
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Electron Gas ◽  
Two Dimensional ◽  
Magnetic Field Effects ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Field Effects ◽  
Alloy Disorder ◽  
Dimensional Electron Gas

We investigate correlation and magnetic field effects on the mobility and resistivity of a quasi-two-dimensional electron gas in an InP/In\(_{1 - x}\)Ga\(_{x}\)As/InP quantum well at arbitrary temperatures. We study the dependence of the mobility and resistivity on the carrier density, magnetic field, layer thickness and temperature for alloy disorder and impurity scattering using different approximations for the local-field correction. Multiple scattering effects and discuss the possibility of a metal-insulator transition, which might happen at low density for unpolarized and fully polarized electron gas are also considered.

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