Silicon nanostructure arrays prepared by single step metal assisted chemical etching from single crystal wafer

Author(s):  
Kalyan Sarkar ◽  
Debajyoti Das
ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.


Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1760
Author(s):  
Ioannis Kochylas ◽  
Spiros Gardelis ◽  
Vlassis Likodimos ◽  
Konstantinos Giannakopoulos ◽  
Polycarpos Falaras ◽  
...  

In this study, we developed highly sensitive substrates for Surface-Enhanced-Raman-Scattering (SERS) spectroscopy, consisting of silicon nanowires (SiNWs) decorated by silver nanostructures using single-step Metal Assisted Chemical Etching (MACE). One-step MACE was performed on p-type Si substrates by immersion in AgNO3/HF aqueous solutions resulting in the formation of SiNWs decorated by either silver aggregates or dendrites. Specifically, dendrites were formed during SiNWs’ growth in the etchant solution, whereas aggregates were grown after the removal of the dendrites from the SiNWs in HNO3 aqueous solution and subsequent re-immersion of the specimens in a AgNO3/HF aqueous solution by adjusting the growth time to achieve the desired density of silver nanostructures. The dendrites had much larger height than the aggregates. R6G was used as analyte to test the SERS activity of the substrates prepared by the two fabrication processes. The silver aggregates showed a considerably lower limit of detection (LOD) for SERS down to a R6G concentration of 10−13 M, and much better uniformity in terms of detection in comparison with the silver dendritic structures. Enhancement factors in the range 105–1010 were calculated, demonstrating very high SERS sensitivities for analytic applications.


2015 ◽  
Vol 26 (15) ◽  
pp. 155601
Author(s):  
Zewen Zuo ◽  
Kai Zhu ◽  
Lixin Ning ◽  
Guanglei Cui ◽  
Jun Qu ◽  
...  

2005 ◽  
Vol 117 (18) ◽  
pp. 2797-2802 ◽  
Author(s):  
Kuiqing Peng ◽  
Yin Wu ◽  
Hui Fang ◽  
Xiaoyan Zhong ◽  
Ying Xu ◽  
...  

Coatings ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 149 ◽  
Author(s):  
Shanshan Wang ◽  
Huan Liu ◽  
Jun Han

Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precisely controlled. Ultra-thin anodic aluminum oxide (AAO) is one of the new-pattern nanostructure assembly systems for the synthesis of nanomaterials. The synthesized nanostructure arrays can be tuned to exhibit different optical and electrical properties in a certain wavelength range by adjusting the AAO membrane parameters. In this paper, we demonstrate an ultra-thin Au nano-meshes array from a single hexagonal AAO membrane as a replication master instead of conventional Ag particles as etching catalyst. The extended ordered silicon nanowires arrays are fabricated by the selective chemical dissolution of nanoscale noble metal meshes that exhibit excellent anti-reflection performance in broadband wavelengths and a wide incidence angle.


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