Strain relaxation and epitaxial relationship of perylene overlayer on Ag(110)

2018 ◽  
Vol 148 (21) ◽  
pp. 214702 ◽  
Author(s):  
Nataliya Kalashnyk ◽  
Lionel Amiaud ◽  
Céline Dablemont ◽  
Anne Lafosse ◽  
Kirill Bobrov ◽  
...  
Keyword(s):  
Strain Relaxation ◽  
Epitaxial Relationship ◽  
Relationship Of

High-resolution transmission electron microscopic investigations of molybdenum thin films on faceted α-Al2O3

2005 ◽  
Vol 38 (2) ◽  
pp. 260-265 ◽  
Author(s):  
Leonore Wiehl ◽  
Jens Oster ◽  
Michael Huth
Keyword(s):  
High Resolution ◽  
Three Dimensional ◽  
Epitaxial Relationship ◽  
Electron Microscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Α Al2o3 ◽  
Relationship Of

Epitaxially grown Mo films on a faceted corundum (α-Al2O3)mplane were investigated by transmission electron microscopy. Low- and high-resolution images were taken from a cross-section specimen cut perpendicular to the facets. It was possible to identify unambiguously the crystallographic orientation of these facets and explain the considerable deviation (∼10°) of the experimental interfacet angle, as measured with atomic force microscopy (AFM), from the expected value. For the first time, proof is given for a smooth \{10\bar{1}1\} facet and a curvy facet with orientation near to \{10\bar{1}\bar{2}\}. Moreover, the three-dimensional epitaxial relationship of an Mo film on a faceted corundummsurface was determined.

scholarly journals Thermal Chemical Vapor Deposition of Epitaxial Rhombohedral Boron Nitride from Trimethylboron and Ammonia

2018 ◽  
Author(s):  
Laurent Souqui ◽  
Henrik Pedersen ◽  
Hans Högberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Relationship ◽  
Out Of Plane ◽  
Α Al2o3 ◽  
Favorable Conditions ◽  
Relationship Of ◽  
Rhombohedral Boron

Epitaxial rhombohedral boron nitride films were deposited on α-Al2O3(001) substrates by chemical vapor deposition, using trimethylboron, ammonia, and with a low concentration of silane in the growth flux. The depositions were performed at temperatures from 1200 to 1485 °C, pressures from 30 to 90 mbar and N/B ratios from 321 to 1286. The most favorable conditions for epitaxy were: a temperature of 1400 °C, N/B around 964, and pressures below 40 mbar. Analysis by thin film X-ray diffraction showed that most deposited films were polytype-pure epitaxial r-BN with an out-of-plane epitaxial relationship of r-BN[001]∥ w-AlN[001]∥ α-Al2O3[001] and with two in-plane relationships of r-BN[110]∥ w-AlN[110]∥ α-Al2O3[100] and r-BN[110]∥ w-AlN[110]∥ α-Al2O3[1̅00] due to twinning.

The process and mechanism of the GaN nanoparticles formed by nitridation of β-Ga2O3 crystal

2017 ◽  
Vol 31 (10) ◽  
pp. 1750108 ◽  
Author(s):  
Xiao-Jun Cui ◽  
Liang-Ling Wang
Keyword(s):  
Vapor Deposition ◽  
Surface Defect ◽  
Chemical Vapor ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Diffraction Peaks ◽  
Relationship Of ◽  
Gan Film

The process of conversion from [Formula: see text]-Ga2O3 single crystal to gallium nitride (GaN) in an atmosphere of NH3 by chemical vapor deposition is investigated. The surface morphology and microstructure of the GaN nanoparticles are observed by scanning electron microscope, which indicates that the growth of GaN is via the Volmer–Weber mechanism. The [Formula: see text]-Ga2O3 is firstly evaporated at high temperature to form the porous layer, followed by the surface-defect induced GaN nucleation formation. The crystalline structure and epitaxial relationship of the GaN nanoparticles are investigated by X-ray diffraction (XRD) via [Formula: see text]–[Formula: see text], showing GaN (0002) and (0004) diffraction peaks in the XRD spectra. It is concluded that the polycrystalline GaN film with hexagonal structure has a strong c-axis preferential orientation.

Microwave Phase Shifters: Epitaxial Growth by Pulsed Laser Deposition of Dielectric Ba0.5Sr0.5TiO3 Thin Films on MgO

2005 ◽  
Vol 902 ◽  
Author(s):  
YauYau Tse ◽  
P. S. Suherman ◽  
T. J. Jackson ◽  
I. P. Jones
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strain Relaxation ◽  
Pulsed Laser ◽  
Phase Shifters ◽  
Laser Deposition ◽  
Ex Situ ◽  
Misfit Dislocations ◽  
Epitaxial Relationship

AbstractBa0.5Sr0.5TiO3 (BSTO) thin films were grown on (001) MgO using pulsed-laser deposition (PLD). The microstructures of in-situ and ex-situ annealed BSTO films were studied by X-ray diffraction and transmission electron microscopy (TEM). The films showed a cube on cube epitaxial relationship with <100> BSTO // <100> MgO. They were essentially single crystals with a columnar structure and possessed smooth surfaces. The interfaces of the BSTO films and substrates were atomically sharp, with misfit dislocations. Better crystallinity and full strain relaxation was obtained in films grown in 10-1 mbar oxygen and annealed ex-situ. A 30% increase in dielectric tuneability was achieved compared with in-situ annealing and deposition at 10-4 mbar. Threading dislocations are the dominant defects in the films grown in 10-1 mbar oxygen and annealed ex-situ, while the films with in-situ annealing show columnar structures with low angle boundaries.

Microstructural development of BaTiO3 powders synthesized by aqueous methods

1996 ◽  
Vol 11 (6) ◽  
pp. 1325-1328 ◽  
Author(s):  
L. Zhao ◽  
A. T. Chien ◽  
F. F. Lange ◽  
J. S. Speck
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Anatase Tio2 ◽  
Microstructural Development ◽  
Complete Conversion ◽  
Epitaxial Relationship ◽  
Tio2 Particles ◽  
Transmission Electron ◽  
Alkaline Conditions ◽  
Relationship Of

The hydrothermal growth of perovskite BaTiO3 powders has been studied by transmission electron microscopy. The growth is carried out under high alkaline conditions (pH — 14) achieved with Ba(OH)2. Anatase (TiO2) is used as a titanium source. The perovskite BaTiO3 nucleates heterogeneously on anatase TiO2 particles with an epitaxial relationship of (001)TiO2 ‖ (001)BaTiO3 and [010]TiO2 ‖ [010]BaTiO3. This epitaxial relationship preserves the parallel alignment of the oxygen octahedra between the structures. A mosaic misorientation between (001)TiO2 and (001)BaTiO3 along 〈110〉 is seen in this relationship due to the lattice mismatch between TiO2 and BaTiO3. After complete conversion of the anatase to BaTiO3, the BaTiO3 particles develop into {111} octahedrons with ∼10 nm {001} and {110} microfacets on the {111} faces. This evolution suggests that {111} becomes the stable crystallographic facet for BaTiO3 under highly alkaline conditions.

Preparation of epitaxial SrBi2Nb2O9 and SrBi2Ta2O9 thin films by the coating-pyrolysis process

1999 ◽  
Vol 14 (7) ◽  
pp. 3090-3095 ◽  
Author(s):  
T. Nagahama ◽  
T. Manabe ◽  
I. Yamaguchi ◽  
T. Kumagai ◽  
S. Mizuta ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Films ◽  
Yttria Stabilized Zirconia ◽  
Pyrolysis Process ◽  
Stabilized Zirconia ◽  
Epitaxial Relationship ◽  
Force Microscopy ◽  
Atomic Force ◽  
Polycrystalline Thin Films ◽  
Relationship Of

Epitaxial and polycrystalline thin films of bismuth layer-structured ferroelectrics, SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT), were prepared on single-crystal SrTiO3(001) and polycrystalline yttria-stabilized zirconia substrates, respectively, by the coating-pyrolysis process. The epitaxial relationship of the films and substrates was SBN, SBT (001)//SrTiO3(001) and SBN, SBT [100]//SrTiO3[100],[010], where pseudotetragonal indices were adopted for SBN and SBT. The lattices of the epitaxial films were found to be slightly strained owing to stress from the substrate. Atomic force microscopy observations showed that the epitaxial films as well as polycrystalline films consisted of round-shaped, islandlike grains of submicrometer size.

Epitaxial relationship of ZnO film with Si (001) substrate and its effect on growth and morphology

2006 ◽  
Vol 88 (25) ◽  
pp. 251911 ◽  
Author(s):  
Z. W. Liu ◽  
C. W. Sun ◽  
J. F. Gu ◽  
Q. Y. Zhang
Keyword(s):  
Zno Film ◽  
Epitaxial Relationship ◽  
Relationship Of ◽  
Effect On Growth

Growth of ZnO Thin Films on Sapphire Substrates by ECR-Assisted MBE

1997 ◽  
Vol 474 ◽  
Author(s):  
Hee-Bog Kang ◽  
Kiyoshi Nakamura ◽  
Kazuo Ishikawa
Keyword(s):  
Sapphire Substrate ◽  
Electron Cyclotron Resonance ◽  
Rf Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Epitaxial Relationship ◽  
Rocking Curve ◽  
Sapphire Substrates ◽  
Relationship Of ◽  
Ecr Source

ABSTRACTEpitaxial ZnO films were grown on c-plane sapphire substrate at low temperature using the electron cyclotron resonance-assisted molecular beam epitaxy(ECR-assisted MBE) technique. In this method, Zn vapor provided by a Knudsen cell reacts with oxygen activated in an ECR source on the surface of sapphire substrate. The crystal structure, surface morphology and epitaxial relationship of the films were investigated. It was confirmed that the ECR-assisted MBE technique was capable of growing a high quality epitaxial ZnO films on c-plane sapphire substrates at low temperatures in comparison with CVD and RF sputtering. The FWHM of an x-ray rocking curve of the (0002) peak for a 0.33μ-thick ZnO film was as narrow as 0.58°. The epitaxial relationship between ZnO film and c-plane sapphire substrate was determined to be (0001)ZnO//(0001)Al2O3 with in-plane alignment of [1100]ZnO//[2110]Al2O3, which is equivalent to the 30° rotation of ZnO relative to sapphire in the c-plane.

Optical Waveguides Using Epitaxial Bi4Ti3O12 Thin Films on MgO with CeO2 Cladding Layers

1995 ◽  
Vol 401 ◽  
Author(s):  
William Jo ◽  
T. W. Noh ◽  
Y. T. Byun ◽  
S. H. Kim
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Near Field ◽  
Single Mode ◽  
Field Pattern ◽  
X Ray Diffraction ◽  
Ion Milling ◽  
Epitaxial Relationship ◽  
Relationship Of ◽  
Cladding Layers

AbstractCeO2 thin films were grown on MgO(001) single-crystal substrates by pulsed laser deposition. The CeO2 thin films were used as a cladding layer of a Bi4Ti3O12 thin film waveguide. Structural properties of the BTO/CeO2/MgO heterostructures were investigated using x-ray diffraction techniques. An epitaxial relationship of BTO(001)//CeO2(001)// MgO(001) and BTO[100]//CeO2[100]//MgO[001] was confirmed. From the epitaxial heterostructure, a ridge waveguide was fabricated by photolithographic and ion-milling techniques. An single-mode near-field pattern was observed using an end-fire coupling method.

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