scholarly journals Characterization of SiO2/SiC interface states and channel mobility from MOSFET characteristics including variable-range hopping at cryogenic temperature

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045217 ◽  
Keyword(s):  
Cryogenic Temperature ◽  
Interface States ◽  
Variable Range Hopping ◽  
Channel Mobility ◽  
Variable Range

Accurate Characterization of Interface State Density of SiC MOS Structures and the Impacts on Channel Mobility

2014 ◽  
Vol 778-780 ◽  
pp. 418-423 ◽  
Author(s):  
Hironori Yoshioka ◽  
Takashi Nakamura ◽  
Junji Senzaki ◽  
Atsushi Shimozato ◽  
Yasunori Tanaka ◽  
...  
Keyword(s):  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Subthreshold Slope ◽  
Field Effect Mobility ◽  
Channel Mobility ◽  
The Common ◽  
Mos Structures

We focused on the inability of the common high-low method to detect very fast interface states, and developed methods to evaluate such states (CψS method). We have investigated correlation between the interface state density (DIT) evaluated by the CψS method and MOSFET performance, and found that the DIT(CψS) was well reflected in MOSFET performance. Very fast interface states which are generated by nitridation restricted the improvement of subthreshold slope and field-effect mobility.

scholarly journals Characterization of SiO2/SiC Interface of Phosphorous-Doped MOS Capacitors by Conductance Measurements

2019 ◽  
Vol 8 (3) ◽  
pp. 5505-5508
Keyword(s):  
Frequency Response ◽  
Interface State ◽  
Interface States ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Channel Mobility ◽  
Conductance Method ◽  
Mos Structures

Interface states of MOS structures capacitors incorporated with low levels of phosphorous have been investigated by conductance and C-ψs method. The frequency response of interface states was observed by the conductance method up to 10 MHz. The correlation between the frequency response of interface states and interface state density determined by C-ψs method was studied. It was found that fast states in phosphorous incorporated samples reduced significantly at high frequency (>5 MHz) while sample annealed with nitrogen remained high up to 10 MHz. The interface state density, Dit of phosphorous incorporated sample near conduction band is lower compared to nitridated sample. These results indicate phosphorous passivation effectively reduces Dit at the SiO2 /SiC interfaces and can be correlated to high channel mobility.

scholarly journals Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

2020 ◽  
pp. 1-6
Author(s):  
Matthias L. Vermeer ◽  
Raymond J. E. Hueting ◽  
Luca Pirro ◽  
Jan Hoentschel ◽  
Jurriaan Schmitz
Keyword(s):  
Interface States ◽  
Subthreshold Current

Mott variable range hopping transport in thermal evaporated vanadyl 2, 3 naphthalocyanine thin films

2021 ◽  
pp. 125029
Author(s):  
I. Dhanya ◽  
Malathy Krishnan ◽  
Reny Renji ◽  
M.K. Anu ◽  
Rachel G. Varghese ◽  
...  
Keyword(s):  
Thin Films ◽  
Variable Range Hopping ◽  
Hopping Transport ◽  
Variable Range

Temperature-dependent activation energy and variable range hopping in semi-insulating GaAs

2006 ◽  
Vol 21 (12) ◽  
pp. 1681-1685 ◽  
Author(s):  
R M Rubinger ◽  
G M Ribeiro ◽  
A G de Oliveira ◽  
H A Albuquerque ◽  
R L da Silva ◽  
...  
Keyword(s):  
Activation Energy ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Variable Range
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