scholarly journals Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells

2018 ◽  
Vol 112 (19) ◽  
pp. 193904 ◽  
Author(s):  
Guangtao Yang ◽  
Peiqing Guo ◽  
Paul Procel ◽  
Arthur Weeber ◽  
Olindo Isabella ◽  
...  
2021 ◽  
Author(s):  
Yuanwei Jiang ◽  
Shuangying Cao ◽  
Linfeng Lu ◽  
Guanlin Du ◽  
Yinyue Lin ◽  
...  

Abstract Owing to its large work function, MoOX has been widely used for hole-selective contact in both thin film and crystalline silicon solar cells. In this work, thermally evaporated MoOX films are employed on the rear sides of p-type crystalline silicon (p-Si) solar cells, where the optical and electronic properties of the MoOX films as well as the corresponding device performances are investigated as a function of post-annealing treatment. The MoOX film annealed at 100oC shows the highest work function and proves the best hole selectivity based on the results of energy band simulation and contact resistivity measurements. The full rear p-Si/MoOX/Ag contacted solar cells demonstrate the best performance with an efficiency of 19.19%, which is the result of the combined influence of MoOX’s hole selectivity and passivation ability.


Energies ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 3397 ◽  
Author(s):  
Jong Lim ◽  
Woo Shin ◽  
Hyemi Hwang ◽  
Young-Chul Ju ◽  
Suk Ko ◽  
...  

Cut solar cells have received considerable attention recently as they can reduce electrical output degradation when the c-Si solar cells (crystalline-silicon solar cells) are shaded. Cut c-Si solar cells have a lower short-circuit current than normal solar cells and the decrease in short-circuit currents is similar to the shading effect of c-Si solar cells. However, the results of this study’s experiment show that the shadow effect of a c-Si solar cell reduces the V o c (open circuit voltage) in the c-Si solar cell but the V o c does not change when the c-Si solar cell is cut because the amount of incident light does not change. In this paper, the limitations of the electrical power analysis of the cut solar cells were identified when only photo current was considered and the analysis of the electric output of the cut c-Si solar cells was interpreted with a method different from that used in previous analyses. Electrical output was measured when the shaded and cut rates of c-Si solar cells were increased from 0% to 25, 50 and 75%, and a new theoretical model was compared with the experimental results using MATLAB.


2018 ◽  
Vol 8 (11) ◽  
pp. 2131
Author(s):  
Jun-Kyu Lee ◽  
Jin-Seok Lee ◽  
Young-Soo Ahn ◽  
Gi-Hwan Kang

We present electrowinning of silver (Ag) from crystalline silicon (c-Si) solar cells using a solution of methanesulfonic acid (MSA) as the electrolyte. Ag dissolved effectively in MSA because of its high solubility in MSA; however, the electrochemical recovery of Ag from MSA solutions was found to be inefficient because of the low mobility of Ag ions in MSA, owing to its high viscosity. Therefore, we decreased the viscosity of MSA by adding deionized (DI) water, as a possible method for enhancing the mobility of Ag ions. The concentrations of added DI water were 0, 1.1, 5.0, 9.3, and 20.8 M, respectively. Further, we performed cyclic voltammetry for each solution to calculate the diffusion coefficient using the Randles–Sevcik equation, and analyzed the viscosity of MSA solutions depending on the concentration of added water using a rheometer. The morphologies of the electrochemically recovered Ag particles changed with variations in the amount of the added water, from branch-like structures to dendritic structures with a decreasing size. Moreover, the cathodic current efficiency increased considerably with increasing concentration of the added DI water. Finally, we recovered Ag with >99.9% (3N) purity from c-Si solar cells by electrowinning, as determined by glow discharge mass spectrometry.


Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 430 ◽  
Author(s):  
Cao Yu ◽  
Shengzhi Xu ◽  
Jianxi Yao ◽  
Shuwei Han

Crystalline silicon (c-Si) is the dominating photovoltaic technology today, with a global market share of about 90%. Therefore, it is crucial for further improving the performance of c-Si solar cells and reducing their cost. Since 2014, continuous breakthroughs have been achieved in the conversion efficiencies of c-Si solar cells, with a current record of 26.6%. The great efficiency boosts originate not only from the materials, including Si wafers, emitters, passivation layers, and other functional thin films, but also from novel device structures and an understanding of the physics of solar cells. Among these achievements, the carrier-selective passivation contacts are undoubtedly crucial. Current carrier-selective passivation contacts can be realized either by silicon-based thin films or by elemental and/or compound thin films with extreme work functions. The current research and development status, as well as the future trends of these passivation contact materials, structures, and corresponding high-efficiency c-Si solar cells will be summarized.


RSC Advances ◽  
2016 ◽  
Vol 6 (60) ◽  
pp. 55499-55506 ◽  
Author(s):  
Hom N. Luitel ◽  
Shintaro Mizuno ◽  
Toshihiko Tani ◽  
Yasuhiko Takeda

The newly developed CaZrO3:Er3+,Ni2+ broadband-sensitive upconverter utilizes 1060–1600 nm solar irradiation and can surpass the limiting efficiency of c-Si solar cells.


1994 ◽  
Vol 358 ◽  
Author(s):  
B. Jagannathan ◽  
J. Yi ◽  
R. Wallace ◽  
W. A. Anderson

ABSTRACTHeterojunction solar cells were fabricated by glow discharge deposition of amorphous silicon on p-type crystalline silicon resulting in a n/i/p structure. Dark I-V-T data on the devices show that the conduction in the forward bias regime (<0.4 volts) for better devices agrees with a multi-tunnelling-capture-emission process. The photoresponse was evaluated (under 100 mW/cm2) for various a-Si thicknesses and substrate resistivities. Spectral response tests showed an increased low wavelength absorption as the a-Si thickness was decreased. The blue response of the devices have better fill-factors than the red response indicating defects at the interface. Further, I-V-T and C-V measurements also corroborate the presence of defect states which seem to prevent the spread of the depletion region in crystalline silicon. The photoresponse was found to be very sensitive to the interface defects and the fill-factors ranged from 0.42, for the sample in which the depletion region had spread, to 0.1 in those where the depletion region had been reduced in thickness by the interface states.


1994 ◽  
Vol 34 (1-4) ◽  
pp. 415-422 ◽  
Author(s):  
P. Sichanugrist ◽  
T. Sasaki ◽  
A. Asano ◽  
Y. Ichikawa ◽  
H. Sakai

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