scholarly journals Structure, magnetism and electrical transport in epitaxial La0.23Pr0.41Ca0.36MnO3 thin films: Consequences of film thickness

AIP Advances ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 095002 ◽  
Author(s):  
Sandeep Singh ◽  
P. K. Tyagi ◽  
H. K. Singh
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Electrical Transport

Specular Scattering in Electrical Transport in the Thin Tilm System CoSi2/Si

1984 ◽  
Vol 37 ◽  
Author(s):  
J. C. Hensel ◽  
R. T. Tung ◽  
J. M. Poate ◽  
F. C. Unterwald
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Size Effect ◽  
Electrical Transport ◽  
Low Temperatures ◽  
Boundary Scattering ◽  
Specular Scattering ◽  
Bulk Scattering ◽  
Scattering Lengths ◽  
High Degree

AbstractWe have investigated electrical transport in thin films of CoSi2 at low temperatures as a function of film thickness and observe in conductivity a size effect much smaller than seen heretofore indicative of a high degree of specularity in the boundary scattering. This in large part owes to the unique characteristics of these films, i.e., they are single crystal and continuous down to ∼60Å thickness with long bulk scattering lengths (≈1000Å) in transport at liquid He temperatures and have nearly atomically perfect interfaces.

Effects of Deposition Temperature and Film Thickness on the Structural, Electrical, and Optical Properties of Germanium Thin Films

2002 ◽  
Vol 715 ◽  
Author(s):  
William B. Jordan ◽  
Sigurd Wagner
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Electrical Transport ◽  
Deposition Temperature ◽  
High Mobility ◽  
Chemical Vapor ◽  
Electrical Transport Properties ◽  
Electrical And Optical Properties

AbstractGermanium films deposited on glass by plasma-enhanced chemical vapor deposition from germane and hydrogen grow in the structure succession of amorphous-nanocrystallineamorphous-nanocrystalline as the substrate temperature is raised from 30°C to 310°C. We ascribe the phase formation, from low to high temperature, to a sequence of low to high mobility of Ge growth species on a surface that is hydrogenated at low temperature but not hydrogenated at high temperature. We report some structural, optical, and electrical transport properties of Ge films as a function of deposition temperature and film thickness.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

Optical transmittance and electrical transport investigations of Fe-doped In2O3 thin films

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Afroz Khan ◽  
F. Rahman ◽  
Razia Nongjai ◽  
K. Asokan
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Optical Transmittance

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Magnetic Moments ◽  
Structural Disorder ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Strongly Correlated Electron ◽  
Correlated Electron Systems ◽  
Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

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