scholarly journals Observation of Kondo behavior in the single crystals of Mn-doped Bi2Se3 topological insulator

AIP Advances ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 045315 ◽  
Author(s):  
R. R. Urkude ◽  
Archna Sagdeo ◽  
R. Rawat ◽  
R. J. Choudhary ◽  
K. Asokan ◽  
...  
2017 ◽  
Vol 41 (20) ◽  
pp. 12259-12267 ◽  
Author(s):  
A. Silambarasan ◽  
P. Rajesh ◽  
Rajeev Bhatt ◽  
Indranil Bhaumik ◽  
K. K. Maurya ◽  
...  

Doped LSMH single crystals exhibited good transmittance percentage, lower birefringence, enhanced SHG efficiency and good piezoelectric response compared to undoped LSMH crystals.


2011 ◽  
Vol 21 (5) ◽  
pp. 363-367 ◽  
Author(s):  
Jia-yue XU ◽  
Qing-bo HE ◽  
Hui SHEN ◽  
Min JIN ◽  
Bao-liang LU ◽  
...  

2019 ◽  
Vol 771 ◽  
pp. 602-606 ◽  
Author(s):  
L.H. Yin ◽  
J. Yang ◽  
P. Tong ◽  
W.H. Song ◽  
J.M. Dai ◽  
...  
Keyword(s):  

2018 ◽  
Vol 55 (3) ◽  
pp. 290-298 ◽  
Author(s):  
Hyun-Taek Oh ◽  
Hyun-Jae Joo ◽  
Moon-Chan Kim ◽  
Ho-Yong Lee
Keyword(s):  

2019 ◽  
Author(s):  
Alfa Sharma ◽  
Kushal Mazumder ◽  
Yogendra Kumar ◽  
Parasharam M. Shirage

2013 ◽  
Vol 69 (5) ◽  
pp. 377-380 ◽  
Author(s):  
Xiaobing Li ◽  
Xiangyong Zhao ◽  
Bo Ren ◽  
Haosu Luo ◽  
Wenwei Ge ◽  
...  

2013 ◽  
Vol 709 ◽  
pp. 172-175
Author(s):  
Li Lv ◽  
Min Zhang ◽  
Li Qin Yang ◽  
Xin Sheng Yang ◽  
Yong Zhao

Single crystals of Bi2Se3 topological insulators have been prepared though melt-grown reaction. The sintering parameters of holding time and cooling rate obviously affect the phase structure and electrical properties. The samples with layered structure can be perpendicular cleaved with (0 0 L) axis. All the samples show n-type conductivity caused by the existence of Se vacancies. For low cooling rate, more Se atoms anti-occupy Bi lattice sites, which decreases c-axis lattice parameter and increases carrier concentration n; high cooling rate increases c and decreases n because of less Se atoms occupying Bi lattice sites. Increasing holding time firstly decreases the ratio of Se atoms occupying Bi lattice sites and then increases it, which gives rise to c firstly increase then decrease and n firstly decrease then increase.


2020 ◽  
Vol 31 (11) ◽  
pp. 8240-8247 ◽  
Author(s):  
Yuma Takebuchi ◽  
Hiroyuki Fukushima ◽  
Takumi Kato ◽  
Daisuke Nakauchi ◽  
Noriaki Kawaguchi ◽  
...  

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