scholarly journals Realization of the revival of silenced echo (ROSE) quantum memory scheme in orthogonal geometry

2018 ◽  
Author(s):  
M. M. Minnegaliev ◽  
K. I. Gerasimov ◽  
R. V. Urmancheev ◽  
S. A. Moiseev ◽  
T. Chanelière ◽  
...  
Keyword(s):  
Quantum Memory ◽  
Orthogonal Geometry ◽  
Memory Scheme

scholarly journals Modular quantum memories using passive linear optics and coherent feedback

2015 ◽  
Vol 15 (11&12) ◽  
pp. 1017-1040
Author(s):  
Hendra I. Nurdin ◽  
John E. Gough
Keyword(s):  
Single Photon ◽  
Coupled System ◽  
Quantum Memory ◽  
Internal Mode ◽  
Linear Optics ◽  
Optical Fields ◽  
Optical Cavities ◽  
Modular Architectures ◽  
Memory Scheme ◽  
And Storage

In this paper, we show that quantum memory for qudit states encoded in a single photon pulsed optical field has a conceptually simple modular realization using only passive linear optics and coherent feedback. We exploit the idea that two decaying optical cavities can be coupled in a coherent feedback configuration to create an internal mode of the coupled system which is isolated and decoherence-free for the purpose of qubit storage. The qubit memory can then be switched between writing/read-out mode and storage mode simply by varying the routing of certain freely propagating optical fields in the network. It is then shown that the qubit memories can be interconnected with one another to form a qudit quantum memory. We explain each of the phase of writing, storage, and read-out for this modular quantum memory scheme. The results point a way towards modular architectures for complex compound quantum memories.

Stimulated Raman process in a scattering medium applied to the quantum memory scheme

2008 ◽  
Vol 78 (4) ◽  
Author(s):  
O. S. Mishina ◽  
N. V. Larionov ◽  
A. S. Sheremet ◽  
I. M. Sokolov ◽  
D. V. Kupriyanov
Keyword(s):  
Quantum Memory ◽  
Scattering Medium ◽  
Raman Process ◽  
Memory Scheme ◽  
Stimulated Raman

scholarly journals High-fidelity quantum gates for OAM single qudits on quantum memory

2022 ◽  
Vol 19 (2) ◽  
pp. 025202
Author(s):  
E A Vashukevich ◽  
E N Bashmakova ◽  
T Yu Golubeva ◽  
Yu M Golubev
Keyword(s):  
Quantum Systems ◽  
Quantum Memory ◽  
Quantum Gates ◽  
High Fidelity ◽  
Optimal Conditions ◽  
Memory Scheme ◽  
Different Dimensions ◽  
Single Qudit ◽  
High Level ◽  
Promising Avenue

Abstract The application of high-dimensional quantum systems (qudits) in quantum computing and communications seems to be a promising avenue due to the possibility of increasing the amount of information encoded in one physical carrier. In this work, we propose a method for implementing single-qudit gates for qudits based on light modes with orbital angular momentum (OAM). Method for logical qudits encoding, which ensures the quasi-cyclicity of operations, is introduced. Based on the protocol for converting the OAM of light in the Raman quantum memory scheme (Vashukevich et al 2020 Phys. Rev. A 101 033830), we show that the considered gates provide an extremely high level of fidelity of single-qudit transformations. We also compare quantum gates’ properties for systems of different dimensions and find the optimal conditions for carrying out transformations in the protocol under consideration.

scholarly journals Quantum memory scheme based on optical fibers and cavities

2006 ◽  
Vol 74 (2) ◽  
Author(s):  
Patrick M. Leung ◽  
Timothy C. Ralph
Keyword(s):  
Optical Fibers ◽  
Quantum Memory ◽  
Memory Scheme

Quantum memory in an orthogonal geometry of silenced echo retrieval

2017 ◽  
Vol 123 (2) ◽  
pp. 211-216 ◽  
Author(s):  
K. I. Gerasimov ◽  
M. M. Minnegaliev ◽  
S. A. Moiseev ◽  
R. V. Urmancheev ◽  
T. Chanelière ◽  
...  
Keyword(s):  
Quantum Memory ◽  
Orthogonal Geometry

Simulation and Contrast Analysis of tem Images of Cracks

1990 ◽  
Vol 48 (1) ◽  
pp. 578-579
Author(s):  
D. Goyal ◽  
A. H. King
Keyword(s):  
Displacement Vector ◽  
Crack Tip ◽  
Perfect Crystal ◽  
Operating Conditions ◽  
Displacement Fields ◽  
Fringe Contrast ◽  
Orthogonal Geometry ◽  
Moire Fringe ◽  
Moiré Fringe

TEM images of cracks have been found to give rise to a moiré fringe type of contrast. It is apparent that the moire fringe contrast is observed because of the presence of a fault in a perfect crystal, and is characteristic of the fault geometry and the diffracting conditions in the TEM. Various studies have reported that the moire fringe contrast observed due to the presence of a crack in an otherwise perfect crystal is distinctive of the mode of crack. This paper describes a technique to study the geometry and mode of the cracks by comparing the images they produce in the TEM because of the effect that their displacement fields have on the diffraction of electrons by the crystal (containing a crack) with the corresponding theoretical images. In order to formulate a means of matching experimental images with theoretical ones, displacement fields of dislocations present (if any) in the vicinity of the crack are not considered, only the effect of the displacement field of the crack is considered.The theoretical images are obtained using a computer program based on the two beam approximation of the dynamical theory of diffraction contrast for an imperfect crystal. The procedures for the determination of the various parameters involved in these computations have been well documented. There are three basic modes of crack. Preliminary studies were carried out considering the simplest form of crack geometries, i. e., mode I, II, III and the mixed modes, with orthogonal crack geometries. It was found that the contrast obtained from each mode is very distinct. The effect of variation of operating conditions such as diffracting vector (), the deviation parameter (ω), the electron beam direction () and the displacement vector were studied. It has been found that any small change in the above parameters can result in a drastic change in the contrast. The most important parameter for the matching of the theoretical and the experimental images was found to be the determination of the geometry of the crack under consideration. In order to be able to simulate the crack image shown in Figure 1, the crack geometry was modified from a orthogonal geometry to one with a crack tip inclined to the original crack front. The variation in the crack tip direction resulted in the variation of the displacement vector also. Figure 1 is a cross-sectional micrograph of a silicon wafer with a chromium film on top, showing a crack in the silicon.

scholarly journals Two-photon bunching inside a quantum memory cell

2020 ◽  
Vol 102 (4) ◽  
Author(s):  
A. S. Losev ◽  
T. Yu. Golubeva ◽  
A. D. Manukhova ◽  
Yu. M. Golubev
Keyword(s):  
Memory Cell ◽  
Quantum Memory ◽  
Two Photon
Sign in / Sign up

Export Citation Format

Share Document