An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Kexin Li; Shaloo Rakheja

doi:10.1063/1.5025339

An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors

Journal of Applied Physics ◽

10.1063/1.5025339 ◽

2018 ◽

Vol 123 (18) ◽

pp. 184501 ◽

Cited By ~ 4

Author(s):

Kexin Li ◽

Shaloo Rakheja

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Voltage

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Effects of process temperature during atomic layer deposition using water and ozone as oxidants on current–voltage characteristics of Al2O3/AlGaN/GaN high-electron-mobility transistors on Si substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.020301 ◽

2015 ◽

Vol 54 (2) ◽

pp. 020301 ◽

Cited By ~ 5

Author(s):

Toshiharu Kubo ◽

Joseph J. Freedsman ◽

Yusuke Yoshida ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Si Substrates ◽

Electron Mobility Transistors ◽

Layer Deposition ◽

Current Voltage ◽

Current Voltage Characteristics

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On the Origin of Kink Effect in Current–Voltage Characteristics of AlGaN/GaN High Electron Mobility Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2279158 ◽

2013 ◽

Vol 60 (10) ◽

pp. 3351-3357 ◽

Cited By ~ 19

Author(s):

Janesh K. Kaushik ◽

V. Raman Balakrishnan ◽

Brishbhan Singh Panwar ◽

Rangarajan Muralidharan

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Kink Effect ◽

Current Voltage ◽

Current Voltage Characteristics

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An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulation

IEEE Transactions on Electron Devices ◽

10.1109/16.40914 ◽

1989 ◽

Vol 36 (10) ◽

pp. 2299-2306 ◽

Cited By ~ 26

Author(s):

A.-J. Shey ◽

W.H. Ku

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Charge Control ◽

Electron Mobility Transistors ◽

Current Voltage ◽

Current Voltage Characteristics

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Current–voltage characteristics in III-nitride quantum dot heterostructure based high electron mobility transistors

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2012.07.026 ◽

2012 ◽

Vol 46 ◽

pp. 174-176 ◽

Cited By ~ 1

Author(s):

A. Asgari ◽

N. Fazli

Keyword(s):

Quantum Dot ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Voltage ◽

Current Voltage Characteristics

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Dispersion effect on the current voltage characteristic of AlGaN/GaN high electron mobility transistors

Chinese Physics B ◽

10.1088/1674-1056/20/9/097305 ◽

2011 ◽

Vol 20 (9) ◽

pp. 097305 ◽

Cited By ~ 4

Author(s):

Yan Pu ◽

Lei Pang ◽

Xiao-Juan Chen ◽

Ting-Ting Yuan ◽

Wei-Jun Luo ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Voltage Characteristic ◽

High Electron ◽

Dispersion Effect ◽

Current Voltage Characteristic ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Voltage

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Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

Applied Physics Letters ◽

10.1063/1.4935223 ◽

2015 ◽

Vol 107 (19) ◽

pp. 193506 ◽

Cited By ~ 36

Author(s):

M. Ťapajna ◽

O. Hilt ◽

E. Bahat-Treidel ◽

J. Würfl ◽

J. Kuzmík

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated with Indium-Tin-Oxide Electrodes

IEEE Electron Device Letters ◽

10.1109/led.2020.3048009 ◽

2020 ◽

pp. 1-1

Author(s):

Chih-Yao Chang ◽

Chun-Ta Hsu ◽

Yao-Luen Shen ◽

Tian-Li Wu ◽

Wei-Hung Kuo ◽

...

Keyword(s):

Tin Oxide ◽

Indium Tin Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Oxide Electrodes

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Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108050 ◽

2021 ◽

pp. 108050

Author(s):

Maria Glória Caño de Andrade ◽

Luis Felipe de Oliveira Bergamim ◽

Braz Baptista Júnior ◽

Carlos Roberto Nogueira ◽

Fábio Alex da Silva ◽

...

Keyword(s):

Electron Mobility ◽

Low Frequency ◽

High Electron Mobility Transistors ◽

Frequency Noise ◽

High Electron ◽

Low Frequency Noise ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved small‐signal hybrid parameter‐extraction technique for AlGaN / GaN high electron mobility transistors

International Journal of RF and Microwave Computer-Aided Engineering ◽

10.1002/mmce.22562 ◽

2021 ◽

Author(s):

Xuekun Du ◽

Mohamed Helaoui ◽

Jialin Cai ◽

Jun Liu ◽

Fadhel M. Ghannouchi

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Parameter Extraction ◽

Extraction Technique ◽

High Electron ◽

Small Signal ◽

High Electron Mobility ◽

Electron Mobility Transistors

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GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs)

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2021.106109 ◽

2021 ◽

Vol 135 ◽

pp. 106109

Author(s):

Debaleen Biswas ◽

Takuya Tsuboi ◽

Takashi Egawa

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Double Quantum ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Double Quantum Well ◽

Gate Structure ◽

Gan On Si

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