Super-resolution imaging based on the temperature-dependent electron-phonon collision frequency effect of metal thin films

2018 ◽  
Vol 123 (17) ◽  
pp. 174306
Author(s):  
Chenliang Ding ◽  
Jingsong Wei ◽  
Mufei Xiao
2020 ◽  
Vol 117 (4) ◽  
pp. 043104
Author(s):  
Marco Siniscalchi ◽  
Davide Tierno ◽  
Kristof Moors ◽  
Zsolt Tőkei ◽  
Christoph Adelmann

2016 ◽  
Vol 56 (1) ◽  
pp. 93 ◽  
Author(s):  
Qisong Li ◽  
Jingsong Wei ◽  
Tao Wei ◽  
Xin Liang ◽  
Zhen Bai ◽  
...  

Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.


2010 ◽  
Vol 48 (2) ◽  
pp. 163-168 ◽  
Author(s):  
Hyunkwon Shin ◽  
Hyeongjae Lee ◽  
Hyeongjae Yoo ◽  
Ki-Soo Lim ◽  
Myeongkyu Lee

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