Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication

2018 ◽  
Vol 112 (9) ◽  
pp. 091105 ◽  
Author(s):  
Koji Yamano ◽  
Katsumi Kishino
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

scholarly journals Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

2021 ◽  
Vol 1851 (1) ◽  
pp. 012006
Author(s):  
V O Gridchin ◽  
R R Reznik ◽  
K P Kotlyar ◽  
A S Dragunova ◽  
L N Dvoretckaia ◽  
...  
Keyword(s):  
Optical Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Selective area growth of GaN microstructures on patterned (111) and (001) Si substrates

2001 ◽  
Vol 230 (3-4) ◽  
pp. 346-350 ◽  
Author(s):  
Y. Honda ◽  
Y. Kawaguchi ◽  
Y. Ohtake ◽  
S. Tanaka ◽  
M. Yamaguchi ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

GaAs Epitaxial Growth by ECR-MBE

1991 ◽  
Vol 223 ◽  
Author(s):  
Naoto Kondo ◽  
Yasushi Nanishi ◽  
Tomohiro Shibata ◽  
Norio Yamamoto ◽  
Masatomo Fujimoto
Keyword(s):  
Low Temperatures ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Selective Area Growth ◽  
Desorption Process ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth ◽  
A New Technique

ABSTRACTElectron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE) is a new technique for GaAs growth. This paper describes surface cleaning of GaAs and Si substrates at fairly low temperatures using hydrogen plasma, low temperature growth of GaAs on both substrates, and selective area growth of GaAs on both substrates partially covered with a silicon nitride (SiN) mask. The ability to clean and grow at low temperatures-assumed to be a benefit of using energetic particles—should permit us to grow layers on processed GaAs and/or Si substrates. The electrical properties of grown layers are also described. Selective area growth has been successfully carried out with no deposit on the mask or irregular growth at the mask edge. The desorption process introduced by impinging ions is found to play an important role in the selective area growth.

GaN nanorods and LED structures grown on patterned Si and AlN/Si substrates by selective area growth

2010 ◽  
Vol 7 (7-8) ◽  
pp. 2224-2226 ◽  
Author(s):  
Shunfeng Li ◽  
Sönke Fündling ◽  
Ünsal Sökmen ◽  
Richard Neumann ◽  
Stephan Merzsch ◽  
...  
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

Selective area growth of GaN nanorods on patterned W/SiO2/Si substrates by RF-MBE

2009 ◽  
Vol 311 (19) ◽  
pp. 4437-4441 ◽  
Author(s):  
JongUk Seo ◽  
Shigehiko Hasegawa ◽  
Hajime Asahi
Keyword(s):  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

scholarly journals Compatibility of the selective area growth of GaN nanowires on AlN-buffered Si substrates with the operation of light emitting diodes

2015 ◽  
Vol 26 (8) ◽  
pp. 085605 ◽  
Author(s):  
M Musolino ◽  
A Tahraoui ◽  
S Fernández-Garrido ◽  
O Brandt ◽  
A Trampert ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Selective Area Growth ◽  
Light Emitting ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Selective-Area Growth of GaN Nanowires on Patterned SiOx/Si Substrates by Molecular Beam Epitaxy

2020 ◽  
Vol 46 (11) ◽  
pp. 1080-1083
Author(s):  
V. O. Gridchin ◽  
K. P. Kotlyar ◽  
R. R. Reznik ◽  
L. N. Dvoretskaya ◽  
A. V. Parfen’eva ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth

Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates

2017 ◽  
Vol 460 ◽  
pp. 1-4 ◽  
Author(s):  
Xiaoye Wang ◽  
Wenyuan Yang ◽  
Baojun Wang ◽  
Xianghai Ji ◽  
Shengyong Xu ◽  
...  
Keyword(s):  
Nanowire Arrays ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Selective Area ◽  
Area Growth

scholarly journals Селективный рост методом молекулярно-пучковой эпитаксии массивов нитевидных нанокристаллов GaN на процессированных SiO-=SUB=-x-=/SUB=-/Si-подложках

2020 ◽  
Vol 46 (21) ◽  
pp. 32
Author(s):  
В.О. Гридчин ◽  
К.П. Котляр ◽  
Р.Р. Резник ◽  
Л.Н. Дворецкая ◽  
А.В. Парфеньева ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Growth Parameters ◽  
Optimal Growth ◽  
Morphological Properties ◽  
Selective Area Growth ◽  
Si Substrates ◽  
Gan Nanowires ◽  
Selective Area ◽  
Area Growth ◽  
Seed Layers

We present the results on the selective-area growth of GaN nanowires using a molecular beam epitaxy technique on patterned SiOx/Si substrates without any seed layers. The patterned SiOx/Si substrates were prepared by the simple microlens photolithography method. The influence of the substrate temperature on the morphological properties of GaN nanowires was investigated. The optimal growth parameters for the selective-area growth of GaN nanowires were experimentally determined.

scholarly journals Fully in situ Nb/InAs-nanowire Josephson junctions by selective-area growth and shadow evaporation

2021 ◽  
Author(s):  
Pujitha Perla ◽  
H. Aruni Fonseka ◽  
Patrick Zellekens ◽  
Russell Deacon ◽  
Yisong Han ◽  
...  
Keyword(s):  
Magnetic Fields ◽  
Josephson Junctions ◽  
Quantum Circuits ◽  
Selective Area Growth ◽  
Selective Area ◽  
Area Growth ◽  
Shadow Evaporation ◽  
Superconducting Quantum Circuits

Nb/InAs-nanowire Josephson junctions are fabricated in situ by a special shadow evaporation scheme for the superconducting Nb electrode. The junctions are interesting candidates for superconducting quantum circuits requiring large magnetic fields.

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