scholarly journals The influence of alloying on the phase formation sequence of ultra-thin nickel silicide films and on the inheritance of texture

2018 ◽  
Vol 123 (18) ◽  
pp. 185302 ◽  
Author(s):  
F. A. Geenen ◽  
E. Solano ◽  
J. Jordan-Sweet ◽  
C. Lavoie ◽  
C. Mocuta ◽  
...  
1989 ◽  
Vol 160 ◽  
Author(s):  
L. Luo ◽  
G. A. Smith ◽  
W. M. Gibson

AbstractThe initial growth stages of Ni on clean B-doped Si(111) were studied at room temperature using high energy Ion channeling and Monte Carlo computer simulations of the Ni/Si interface. The results suggest that the first monolayer of Ni atoms diffuse to reaction sites in the fourth layer of the Si(111) substrate where nickel suicide growth begins. Further Ni deposition (up to ~ 3 ML) leads to the growth of NiSi2 which is thought to be a diffusion barrier that terminates further formation of NiSi2 at room temperature.


Author(s):  
M. Tinani ◽  
A. Mueller ◽  
Y. Gao ◽  
E. A. Irene ◽  
Y. Z. Hu ◽  
...  

2013 ◽  
Author(s):  
I.H. Chen ◽  
Y.Y. Hsiao ◽  
C.C. Wang ◽  
C.L. Hsin ◽  
P.W. Li

2014 ◽  
Vol 27 (1) ◽  
pp. 245-254 ◽  
Author(s):  
Antony Premkumar Peter ◽  
Johan Meersschaut ◽  
Olivier Richard ◽  
Alain Moussa ◽  
Johnny Steenbergen ◽  
...  

1988 ◽  
Vol 164 ◽  
pp. 481-486 ◽  
Author(s):  
P.K. John ◽  
H. Frolich ◽  
A.C. Rastogi ◽  
B.Y. Tong

2016 ◽  
Vol 119 (13) ◽  
pp. 135305 ◽  
Author(s):  
B. De Schutter ◽  
K. Van Stiphout ◽  
N. M. Santos ◽  
E. Bladt ◽  
J. Jordan-Sweet ◽  
...  

2013 ◽  
Vol 417 ◽  
pp. 012015 ◽  
Author(s):  
Y Tamura ◽  
R Yoshihara ◽  
K Kakushima ◽  
H Nohira ◽  
O Nakatsuka ◽  
...  

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