scholarly journals Aluminum nitride coatings using response surface methodology to optimize the thermal dissipated performance of light-emitting diode modules

AIP Advances ◽  
2018 ◽  
Vol 8 (5) ◽  
pp. 055106 ◽  
Author(s):  
Ming-Der Jean ◽  
Peng-Da Lei ◽  
Ling-Hua Kong ◽  
Cheng-Wu Liu
Author(s):  
T. Yu. Chemekova ◽  
O. V. Avdeev ◽  
S. S. Nagalyuk ◽  
E. N. Mokhov ◽  
Kh. Khelava ◽  
...  

Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 898
Author(s):  
Adeem Ghaffar Rana ◽  
Mirjana Minceva

Response surface methodology (RSM) involving a Box–Benkhen design (BBD) was employed to analyze the photocatalytic degradation of phenol using exfoliated graphitic carbon nitride (g-C3N4) and light-emitting diodes (wavelength = 430 nm). The interaction between three parameters, namely, catalyst concentration (0.25–0.75 g/L), pollutant concentration (20–100 ppm), and pH of the solution (3–10), was examined and modeled. An empirical regression quadratic model was developed to relate the phenol degradation efficiency with these three parameters. Analysis of variance (ANOVA) was then applied to examine the significance of the model; this showed that the model is significant with an insignificant lack of fit and an R2 of 0.96. The statistical analysis demonstrated that, in the studied range, phenol concentration considerably affected phenol degradation. The RSM model shows a significant correlation between predicted and experimental values of photocatalytic degradation of phenol. The model’s accuracy was tested for 50 ppm of phenol under optimal conditions involving a catalyst concentration of 0.4 g/L catalysts and a solution pH of 6.5. The model predicted a degradation efficiency of 88.62%, whereas the experimentally achieved efficiency was 83.75%.


2014 ◽  
Vol 136 (3) ◽  
Author(s):  
S. Shanmugan ◽  
D. Mutharasu

AlN thin film was coated over Cu substrate (575 mm2) with 400 nm thickness using DC sputtering for thermal interface material (TIM) application. Aluminum Nitride (AlN)-coated Cu substrate (AlN/Cu) was used as a heat sink for 3-W green light emitting diode (LED). The thermal transient curve was recorded for given LED attached with bare Cu and AlN-coated Cu substrate at three different driving currents. LED attached on AlN/Cu showed the reduced raise in junction temperature (TJ) by 2.59 °C at 700 mA. The LED/TIM/AlN/Cu boundary condition was not supported to reduce the TJ. The total thermal resistance (Rth-tot) was reduced for AlN-coated Cu substrate at 350 mA. The thermal resistance between metal core printed circuit board and Cu substrate (Rth-b-hs) was also observed as low for AlN-coated Cu substrates compared with other boundary conditions measured at 700 mA. The observed results were supported for the use of AlN thin film as TIM in high power LEDs.


2020 ◽  
pp. 144-148

Chaos synchronization of delayed quantum dot light emitting diode has been studied theortetically which are coupled via the unidirectional and bidirectional. at synchronization of chaotic, The dynamics is identical with delayed optical feedback for those coupling methods. Depending on the coupling parameters and delay time the system exhibits complete synchronization, . Under proper conditions, the receiver quantum dot light emitting diode can be satisfactorily synchronized with the transmitter quantum dot light emitting diode due to the optical feedback effect.


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